Abstract: A semiconductor memory device includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are stacked one by one alternately; and a pillar that extends in the stacked body in a stacking direction of the stacked body and includes a memory cell formed at each of intersections with the plurality of conductive layers, in which the pillar includes a semiconductor layer extending in the stacking direction, a silicon oxynitride layer covering a side wall of the semiconductor layer, a silicon nitride layer covering a side wall of the silicon oxynitride layer, and a silicon oxide layer covering a side wall of the silicon nitride layer, in which the silicon oxynitride layer has a hydrogen concentration of 1×1020 atm/cc or less in terms of average value.

Abstract: A semiconductor memory device includes: a stack having an insulating layer and a conductive layer, each layer being stacked alternately in a first direction; a semiconductor layer through the insulating and the conductive layer; a memory layer between the stack and the semiconductor layer in a second direction; and an insulation extending from the insulating layer toward the semiconductor layer in the second direction. The insulation and the memory layer define an interface therebetween in a cross-section, the interface having a first point and a second point, the first point overlapping with a middle portion of the insulating layer, the second point overlapping with an end portion of the insulating layer. The second point is closer to the insulating layer in the second direction than the first point is. The interface curves from the first point to the second point to protrude toward the semiconductor layer.

Abstract: In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers, a charge storage layer provided on a side face of the stacked film via a first insulator, and a semiconductor layer provided on a side face of the charge storage layer via a second insulator. The device further includes a third insulator provided between an electrode layer and an insulating layer in the stacked film and between the electrode layer and the first insulator, and a first film provided between the third insulator and the insulating layer and/or between the third insulator and the first insulator, and including carbon, germanium, tin, aluminum, phosphorus or arsenic.

Abstract: In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers, a charge storage layer provided on a side face of the stacked film via a first insulator, and a semiconductor layer provided on a side face of the charge storage layer via a second insulator. The device further includes a third insulator provided between an electrode layer and an insulating layer in the stacked film and between the electrode layer and the first insulator, and a first film provided between the third insulator and the insulating layer and/or between the third insulator and the first insulator, and including carbon, germanium, tin, aluminum, phosphorus or arsenic.

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.