Abstract: A switch circuit in which the cut-off characteristic is improved over a wide range of frequencies in the microwave band includes a first field-effect transistor functioning as a switch element, a second field-effect transistor and an inductor. A serially connected circuit composed of the inductor and second field-effect transistor is connected in parallel with the first field-effect transistor across the source and drain thereof. The second field-effect transistor is turned on when the first field-effect transistor operates normally and is turned off when the first field-effect transistor is inspected.

Abstract: Disclosed is a microwave phase shifter including switches each of which utilizes resonance between an off-capacitance of an FET and an inductor connected in parallel with the off-capacitance of the FET, an LPF, and an HPF, a series circuit of an inductor and an MIM capacitor is arranged in parallel with the FET in each portion of the resonance. In a layout of the LC series-connected circuit, though the inductor is of a non-close-packed structure, a metal member or a dielectric material having a relative dielectric constant higher than that of a dielectric substrate is arranged in a free space in a central portion of the inductor.

Abstract: Provided is a semiconductor device capable of increasing the capacitance of a capacitor, while reducing an area occupied by the capacitor and inductor on a substrate. The semiconductor device includes a first line; an interlayer insulating film that is formed on the first line and has a recess formed at a location corresponding to the first line; and a second line formed in the recess of the interlayer insulating film. The first line, the second line, and an insulating film formed between the first line and the second line constitute a capacitor. At least one of the first line and the second line constitutes an inductor.

Abstract: A phase shifter selectively switches between a low-pass filter 13 and a high-pass filter 12 using single pole double throw switches 10a and 10b provided on the input and output sides, respectively, and operatively linked to each other. The single pole double throw switches 10a and 10b include FETs Q1c and Q1d that connect single pole side junctions and the low-pass filter, respectively, and inductance circuits (L1c and R2c, and L1d and R2d) connected in parallel with FETs Q1c and Q1d, respectively. The inductance circuits are respectively comprised of the inductor L1c and the resistor R2c connected in series and of the inductor L1 d and the resistor R2d connected in series.

Abstract: Disclosed is a microwave phase shifter including switches each of which utilizes resonance between an off-capacitance of an FET and an inductor connected in parallel with the off-capacitance of the FET, an LPF, and an HPF, a series circuit of an inductor and an MIM capacitor is arranged in parallel with the FET in each portion of the resonance. In a layout of the LC series-connected circuit, though the inductor is of a non-close-packed structure, a metal member or a dielectric material having a relative dielectric constant higher than that of a dielectric substrate is arranged in a free space in a central portion of the inductor.

Abstract: A switch circuit in which the cut-off characteristic is improved over a wide range of frequencies in the microwave band includes a first field-effect transistor functioning as a switch element, a second field-effect transistor and an inductor. A serially connected circuit composed of the inductor and second field-effect transistor is connected in parallel with the first field-effect transistor across the source and drain thereof. The second field-effect transistor is turned on when the first field-effect transistor operates normally and is turned off when the first field-effect transistor is inspected.

Abstract: A phase shifter selectively switches between a low-pass filter 13 and a high-pass filter 12 using single pole double throw switches 10a and 10b provided on the input and output sides, respectively, and operatively linked to each other. The single pole double throw switches 10a and 10b include FETs Q1c and Q1d that connect single pole side junctions and the low-pass filter, respectively, and inductance circuits (L1c and R2c, and L1d and R2d) connected in parallel with FETs Q1c and Q1d, respectively. The inductance circuits are respectively comprised of the inductor L1c and the resistor R2c connected in series and of the inductor L1 d and the resistor R2d connected in series.

Abstract: In a switching speed fluctuation detecting apparatus, an input terminal for receiving a signal having a definite time period, a series arrangement of at least one first logic circuit connected to the input terminal, a second logic circuit having a first input connected to the input terminal and a second input connected to an output of the series arrangement and an integrator connected to an output of the second logic circuit are provided.

Abstract: A compound semiconductor static random access memory device has a precharge driving circuit for producing a precharge driving signal n-channel enhancement type compound semiconductor field effect transistors responsive to the precharge driving signal for charging bit lines to a positive power voltage level, and the precharge driving circuit bootstraps the precharge driving signal over the positive power voltage level so as to rapidly complete the precharging operation without sacrifice of stability of the read-out and write-in operations.