Patents by Inventor Takao Fujimori
Takao Fujimori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150270461Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.Type: ApplicationFiled: June 4, 2015Publication date: September 24, 2015Applicant: ROHM CO., LTD.Inventors: Takao FUJIMORI, Yasuo NAKANISHI, Nobuaki MATSUI, Hirotaka OBUCHI
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Publication number: 20150214428Abstract: The light emitting device 1 includes a substrate 2, and an n-type conductive type semiconductor layer 3, a light emitting layer 4 and a p-type conductive type semiconductor layer 5 laminated in series on a surface 2A of the substrate 2. The light emitting layer 4, the p-type conductive type semiconductor layer 5, and a portion of the n-type conductive type semiconductor layer 3 excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion 6. A p-side transparent electrode layer 14 is formed on a surface of the p-type conductive type semiconductor layer 5. The p-side transparent electrode 14 covers a substantially whole area of a predetermined current injection region 13 on a surface of the p-type conductive type semiconductor layer 5. A p-side electrode 15 is formed on a surface of the p-side transparent electrode layer 14.Type: ApplicationFiled: January 20, 2015Publication date: July 30, 2015Applicant: ROHM CO., LTD.Inventors: Takao FUJIMORI, Tomohito KAWASE, Yasuo NAKANISHI
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Patent number: 9082945Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.Type: GrantFiled: December 28, 2011Date of Patent: July 14, 2015Assignee: ROHM CO., LTD.Inventors: Takao Fujimori, Yasuo Nakanishi, Nobuaki Matsui, Hirotaka Obuchi
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Publication number: 20140239340Abstract: The light emitting device includes: a substrate; a first conductive-type semiconductor layer laminated on the substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer, a second ITO layer, a first metal layer and a second metal layer. The first ITO layer is laminated at a side of the first conductive-type semiconductor layer opposite to the substrate. The second ITO layer is laminated at a side of the second conductive-type semiconductor layer opposite to the substrate. The first metal layer is laminated on the first ITO layer. The second metal layer is laminated on the second ITO layer.Type: ApplicationFiled: February 5, 2014Publication date: August 28, 2014Applicant: ROHM CO., LTD.Inventors: Takao FUJIMORI, Nobuaki MATSUI
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Publication number: 20140191270Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicant: ROHM CO., LTD.Inventors: Nobuaki MATSUI, Hirotaka OBUCHI, Yasuo NAKANISHI, Kazuaki TSUTSUMI, Takao FUJIMORI
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Publication number: 20140131737Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? ? n + 0.30 × ( ? 4 ? ? n ) ? T ? 3 ? ? 4 ? ? n + 0.45 × ( ? 4 ? ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.Type: ApplicationFiled: January 6, 2014Publication date: May 15, 2014Applicant: Rohm Co., Ltd.Inventors: Takao FUJIMORI, Yasuo NAKANISHI
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Patent number: 8686433Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.Type: GrantFiled: August 31, 2012Date of Patent: April 1, 2014Assignee: Rohm Co., Ltd.Inventors: Nobuaki Matsui, Hirotaka Obuchi, Yasuo Nakanishi, Kazuaki Tsutsumi, Takao Fujimori
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Patent number: 8653551Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? ? n + 0.30 × ( ? 4 ? ? n ) ? T ? 3 ? ? 4 ? ? n + 0.45 × ( ? 4 ? ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.Type: GrantFiled: January 13, 2012Date of Patent: February 18, 2014Assignee: Rohm Co., Ltd.Inventors: Takao Fujimori, Yasuo Nakanishi
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Patent number: 8422527Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.Type: GrantFiled: February 13, 2012Date of Patent: April 16, 2013Assignee: Rohm Co., Ltd.Inventors: Daisuke Nakagawa, Yoshinori Tanaka, Masahiro Murayama, Takao Fujimori, Shinichi Kohda
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Publication number: 20130056748Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.Type: ApplicationFiled: August 31, 2012Publication date: March 7, 2013Applicant: ROHM CO., LTD.Inventors: Nobuaki MATSUI, Hirotaka Obuchi, Yasuo Nakanishi, Kazuaki Tsutsumi, Takao Fujimori
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Publication number: 20120181561Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? ? n + 0.30 × ( ? 4 ? ? n ) ? T ? 3 ? ? 4 ? ? n + 0.45 × ( ? 4 ? ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.Type: ApplicationFiled: January 13, 2012Publication date: July 19, 2012Applicant: ROHM CO., LTD.Inventors: Takao FUJIMORI, Yasuo NAKANISHI
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Publication number: 20120162984Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.Type: ApplicationFiled: December 28, 2011Publication date: June 28, 2012Applicant: ROHM CO., LTD.Inventors: Takao FUJIMORI, Yasuo Nakanishi, Nobuaki Matsui, Hirotaka Obuchi
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Publication number: 20120140785Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.Type: ApplicationFiled: February 13, 2012Publication date: June 7, 2012Inventors: Daisuke NAKAGAWA, Yoshinori TANAKA, Masahiro Murayama, Takao FUJIMORI, Shinichi KOHDA
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Patent number: 8144743Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.Type: GrantFiled: March 4, 2009Date of Patent: March 27, 2012Assignee: Rohm Co., Ltd.Inventors: Daisuke Nakagawa, Yoshinori Tanaka, Masahiro Murayama, Takao Fujimori, Shinichi Kohda
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Publication number: 20100008391Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.Type: ApplicationFiled: March 4, 2009Publication date: January 14, 2010Applicant: ROHM CO., LTD.Inventors: Daisuke Nakagawa, Yoshinori Tanaka, Masahiro Murayama, Takao Fujimori, Shinichi Kohda
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Publication number: 20090250719Abstract: A nitride semiconductor device includes a semiconductor substrate composed of gallium nitride, and a stack which is provided on the semiconductor substrate and includes at least one nitride semiconductor layer containing aluminum, wherein substrate thickness T of the semiconductor substrate and a sum S of products of proportions of aluminum and thicknesses of all of the nitride semiconductor. layer containing aluminum among the stack satisfy a relationship of: T/860<=S<=T/530.Type: ApplicationFiled: December 18, 2008Publication date: October 8, 2009Applicant: ROHM CO., LTD.Inventor: Takao FUJIMORI