Patents by Inventor Takao FUNAKUBO
Takao FUNAKUBO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210140044Abstract: A film forming method of forming a predetermined film on a substrate by PEALD includes: adsorbing a precursor on the substrate; and forming plasma from a modifying gas and modifying the precursor adsorbed on the substrate with radicals contained in the plasma. Here, the modifying of the precursor includes supplying a radio frequency power having an effective power smaller than 500 W to a plasma source configured to form the plasma from the modifying gas.Type: ApplicationFiled: July 23, 2019Publication date: May 13, 2021Inventors: Hiroshi Nagaike, Daisuke Yoshikoshi, Takao Funakubo, Takahisa Iwasaki, Chiju Hsieh, Yuki Azuma
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Publication number: 20210130955Abstract: A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.Type: ApplicationFiled: July 23, 2019Publication date: May 6, 2021Inventors: Hiroshi NAGAIKE, Daisuke YOSHIKOSHI, Takao FUNAKUBO, Takahisa IWASAKI, Chiju HSIEH, Yuki AZUMA, Hideyuki KOBAYASHI
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Patent number: 10923332Abstract: A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.Type: GrantFiled: April 23, 2019Date of Patent: February 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Masahiro Tabata, Takao Funakubo
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Patent number: 10903085Abstract: There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.Type: GrantFiled: April 22, 2019Date of Patent: January 26, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Masahiro Tabata, Takao Funakubo
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Patent number: 10861675Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: GrantFiled: January 4, 2019Date of Patent: December 8, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
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Patent number: 10734204Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus which is disposed in an inner space defined by a processing chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component, wherein a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; transferring the component from the processing chamber to a heating chamber after substrate treatment is performed in the inner space; and heating the component so that depolymerization of the compound forming the film occurs.Type: GrantFiled: January 15, 2019Date of Patent: August 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Ryuichi Asako
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Patent number: 10626497Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus, a surface of the component being included in a surface that defines an inner space formed in a chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component by supplying a first gas and a second gas into the inner space, wherein a compound forming the film is generated by polymerization of a first compound contained in the first gas and a second compound contained in the second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; and removing, after substrate treatment is performed in the inner space, a deposit formed on the film during the substrate treatment by heating the component so that depolymerization of the compound forming the film occurs.Type: GrantFiled: January 15, 2019Date of Patent: April 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Ryuichi Asako
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Publication number: 20190326106Abstract: There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.Type: ApplicationFiled: April 22, 2019Publication date: October 24, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi ASAKO, Masahiro TABATA, Takao FUNAKUBO
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Publication number: 20190326104Abstract: A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.Type: ApplicationFiled: April 23, 2019Publication date: October 24, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi ASAKO, Masahiro TABATA, Takao FUNAKUBO
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Publication number: 20190218663Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus, a surface of the component being included in a surface that defines an inner space formed in a chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component by supplying a first gas and a second gas into the inner space, wherein a compound forming the film is generated by polymerization of a first compound contained in the first gas and a second compound contained in the second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; and removing, after substrate treatment is performed in the inner space, a deposit formed on the film during the substrate treatment by heating the component so that depolymerization of the compound forming the film occurs.Type: ApplicationFiled: January 15, 2019Publication date: July 18, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Ryuichi ASAKO
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Publication number: 20190221406Abstract: There is disclosed a method for cleaning a component of a plasma processing apparatus which is disposed in an inner space defined by a processing chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component, wherein a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; transferring the component from the processing chamber to a heating chamber after substrate treatment is performed in the inner space; and heating the component so that depolymerization of the compound forming the film occurs.Type: ApplicationFiled: January 15, 2019Publication date: July 18, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Ryuichi ASAKO
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Publication number: 20190139744Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
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Patent number: 10204763Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: GrantFiled: June 26, 2015Date of Patent: February 12, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
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Patent number: 9779962Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.Type: GrantFiled: December 2, 2015Date of Patent: October 3, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Shinichi Kozuka, Yuta Seya, Aritoshi Mitani
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Publication number: 20170221684Abstract: A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and includes at least one of a transition metal and a base metal, by plasma of a processing gas, wherein the processing gas includes Ar gas and a CHzFw gas, and does not includes a chlorine-based gas and a nitrogen-based gas. The deposit is removed by the plasma of the processing gas while applying a negative DC voltage to the member within the processing vessel, and the negative DC voltage is set to be equal to or less than ?100V such that argon ions in the plasma of the processing gas collide with the member within the processing vessel and the deposit is removed by sputtering of the argon ions.Type: ApplicationFiled: April 11, 2017Publication date: August 3, 2017Inventors: Masaru NISHINO, Takao FUNAKUBO, Shinichi KOZUKA, Ryosuke NIITSUMA, Tsutomu ITO
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Patent number: 9653317Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.Type: GrantFiled: October 23, 2014Date of Patent: May 16, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Masaru Nishino, Takao Funakubo, Shinichi Kozuka, Ryosuke Niitsuma, Tsutomu Ito
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Publication number: 20160163554Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.Type: ApplicationFiled: December 2, 2015Publication date: June 9, 2016Inventors: Takao FUNAKUBO, Shinichi KOZUKA, Yuta SEYA, Aritoshi MITANI
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Publication number: 20150380282Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: ApplicationFiled: June 26, 2015Publication date: December 31, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
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Publication number: 20150118859Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.Type: ApplicationFiled: October 23, 2014Publication date: April 30, 2015Inventors: Masaru NISHINO, Takao FUNAKUBO, Shinichi KOZUKA, Ryosuke NIITSUMA, Tsutomu ITO