Patents by Inventor Takao Hamada

Takao Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9159934
    Abstract: A novel organic material with fewer impurities, a light-emitting element including the organic material, and a light-emitting device, an electronic appliance, and a lighting device each of which includes the light-emitting element are provided. The organic material is obtained by coupling an aryl halide and an aryl boronic acid or an aryl boronic acid ester. The aryl boronic acid or the aryl boronic acid ester includes at least one of a first impurity in which a boryl group of the aryl boronic acid or the aryl boronic acid ester is substituted by hydrogen and a second impurity in which a molecular mass of 16 or 17 is added to the molecular mass of the first impurity. The concentration of an impurity other than the first impurity and the second impurity is 1% or lower.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: October 13, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Yasushi Kitano, Takao Hamada, Satoshi Seo, Hiroki Suzuki, Tomohiro Kubota
  • Patent number: 9059411
    Abstract: One embodiment of the present invention is a fluorene compound. Specifically, one embodiment of the present invention is a fluorene compound in which two 9-phenylfluoren-9-yl groups are each bonded to any of a pyridine skeleton and a pyrimidine skeleton through an arylene group, and in which the arylene group is any of one to three phenylene groups.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: June 16, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masato Suzuki, Harue Osaka, Satoko Shitagaki, Nobuharu Ohsawa, Takao Hamada, Toshiki Hamada
  • Patent number: 8956709
    Abstract: A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: February 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoya Aoyama, Takuya Tsurume, Takao Hamada
  • Publication number: 20150021577
    Abstract: A novel organic compound that can be used as a carrier-transport material, a host material, or a light-emitting material in a light-emitting element is provided. Specifically, an organic compound that can give a light-emitting element having favorable characteristics even when the organic compound is used in a light-emitting element emitting phosphorescence is provided. The organic compound has a bipyridine skeleton formed by two pyridine skeletons to each of which a dibenzothiophenyl group or a dibenzofuranyl group is bonded via an arylene group.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 22, 2015
    Inventors: Hiroshi Kadoma, Satomi Mitsumori, Yuko Kawata, Takao Hamada, Satoshi Seo
  • Publication number: 20140034928
    Abstract: A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar1 represents a substituted or unsubstituted naphthyl group, Ar2 represents a substituted or unsubstituted carbazolyl group, Ar3 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and ?1 and ?2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 6, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Takao Hamada, Kanta Abe, Satoshi Seo
  • Publication number: 20140034929
    Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 6, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takao Hamada, Hiromi Seo, Kanta Abe, Kyoko Takeda, Satoshi Seo
  • Publication number: 20130323869
    Abstract: A novel organic material with fewer impurities, a light-emitting element including the organic material, and a light-emitting device, an electronic appliance, and a lighting device each of which includes the light-emitting element are provided. The organic material is obtained by coupling an aryl halide and an aryl boronic acid or an aryl boronic acid ester. The aryl boronic acid or the aryl boronic acid ester includes at least one of a first impurity in which a boryl group of the aryl boronic acid or the aryl boronic acid ester is substituted by hydrogen and a second impurity in which a molecular mass of 16 or 17 is added to the molecular mass of the first impurity. The concentration of an impurity other than the first impurity and the second impurity is 1% or lower.
    Type: Application
    Filed: May 30, 2013
    Publication date: December 5, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Yasushi Kitano, Takao Hamada, Satoshi Seo, Hiroki Suzuki, Tomohiro Kubota
  • Publication number: 20120225221
    Abstract: A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
    Type: Application
    Filed: May 17, 2012
    Publication date: September 6, 2012
    Inventors: Shunpei Yamazaki, Tomoya Aoyama, Takuya Tsurume, Takao Hamada
  • Patent number: 8182863
    Abstract: A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: May 22, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoya Aoyama, Takuya Tsurume, Takao Hamada
  • Publication number: 20090233006
    Abstract: A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.
    Type: Application
    Filed: March 12, 2009
    Publication date: September 17, 2009
    Inventors: Shunpei Yamazaki, Tomoya Aoyama, Takuya Tsurume, Takao Hamada
  • Patent number: 6881377
    Abstract: Provided is an ultrafine nickel powder suitable for a laminated ceramic capacitor electrode material. According to the ultrafine nickel powder, cracks and/or delamination are not liable to generate in the process for producing a ceramic capacitor, and its internal electrode can be made into a thinner layer, and the electric risistivity of the capacitor-can be made low. The ultrafine nickel powder has an average particle size of 0.1-1.0 ?m, having the sulfur content of 0.02-1.0% by weight, and particles thereof being spherical, thereby exhibiting excellent properties. They can be produced by vapor phase hydrogen-reducing process using nickel chloride vapor.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: April 19, 2005
    Assignee: Kawatetsu Mining Co., Ltd.
    Inventors: Hideshi Katayama, Kan Saito, Shuetsu Ogasawara, Takao Hamada
  • Publication number: 20030196516
    Abstract: Provided is an ultrafine nickel powder suitable for a laminated ceramic capacitor electrode material. According to the ultrafine nickel powder, cracks and/or delamination are not liable to generate in the process for producing a ceramic capacitor, and its internal electrode can be made into a thinner layer, and the electric risistivity of the capacitor-can be made low. The ultrafine nickel powder has an average particle size of 0.1-1.0 &mgr;m, having the sulfur content of 0.02-1.0% by weight, and particles thereof being spherical, thereby exhibiting excellent properties. They can be produced by vapor phase hydrogen-reducing process using nickel chloride vapor.
    Type: Application
    Filed: May 21, 2003
    Publication date: October 23, 2003
    Applicant: KAWATETSU MINING CO., LTD.
    Inventors: Hideshi Katayama, Kan Saito, Shuetsu Ogasawara, Takao Hamada
  • Patent number: 6596052
    Abstract: Provided is an ultrafine nickel powder suitable for a laminated ceramic capacitor electrode material. According to the ultrafine nickel powder, cracks and/or delamination are not liable to generate in the process for producing a ceramic capacitor, and its internal electrode can be made into a thinner layer, and the electric risistivity of the capacitor can be made low. The ultrafine nickel powder has an average particle size of 0.1-1.0 &mgr;m, having the sulfur content of 0.02-1.0% by weight, and particles thereof being spherical, thereby exhibiting excellent properties. They can be produced by vapor phase hydrogen-reducing process using nickel chloride vapor.
    Type: Grant
    Filed: October 10, 2001
    Date of Patent: July 22, 2003
    Assignee: Kamatetsu Mining Co., Ltd.
    Inventors: Hideshi Katayama, Kan Saito, Shuetsu Ogasawara, Takao Hamada
  • Patent number: 6402803
    Abstract: Provided is an ultrafine nickel powder suitable for a laminated ceramic capacitor electrode material. According to the ultrafine nickel powder, cracks and/or delamination are not liable to generate in the process for producing a ceramic capacitor, and its internal electrode can be made into a thinner layer, and the electric risistivity of the capacitor can be made low. The ultrafine nickel powder has an average particle size of 0.1-1.0 &mgr;m, having the sulfur content of 0.02-1.0% by weight, and particles thereof being spherical, thereby exhibiting excellent properties. They can be produced by vapor phase hydrogen-reducing process using nickel chloride vapor.
    Type: Grant
    Filed: August 26, 1998
    Date of Patent: June 11, 2002
    Assignee: Kawatetsu Mining Co., Ltd.
    Inventors: Hideshi Katayama, Kan Saito, Shuetsu Ogasawara, Takao Hamada
  • Publication number: 20020035891
    Abstract: Provided is an ultrafine nickel powder suitable for a laminated ceramic capacitor electrode material. According to the ultrafine nickel powder, cracks and/or delamination are not liable to generate in the process for producing a ceramic capacitor, and its internal electrode can be made into a thinner layer, and the electric risistivity of the capacitor can be made low. The ultrafine nickel powder has an average particle size of 0.1-1.0 &mgr;&mgr;m, having the sulfur content of 0.02-1.0 % by weight, and particles thereof being spherical, thereby exhibiting excellent properties. They can be produced by vapor phase hydrogen-reducing process using nickel chloride vapor.
    Type: Application
    Filed: October 10, 2001
    Publication date: March 28, 2002
    Applicant: Kawatetsu Mining Co., Ltd.
    Inventors: Hideshi Katayama, Kan Saito, Shuetsu Ogasawara, Takao Hamada
  • Patent number: 5751924
    Abstract: An overlay printing technique for use with a printing device is disclosed which enables multiple overlays to be defined for each the print page. Overlay data, overlay position information and overlay scale information for each of the overlays set up by an overlay set-up unit are transferred to an overlay storage unit by overlay transferring unit. Print processing unit expands overlay data stored in the overlay storage unit according to corresponding overlay position information and overlay scale information and prints the expanded data and print data obtained by expanding general print data for each print page. One or more overlays are placed in any positions within one print page which are determined by overlay position information and overlay scale information. For multiple-frame printing, a multiple-frame processing unit translates overlay position information and overlay scale information so that each overlay fits in a corresponding frame.
    Type: Grant
    Filed: February 26, 1997
    Date of Patent: May 12, 1998
    Assignee: Fujitsu Limited
    Inventors: Takao Hamada, Takehiro Matsushita, Tizou Shirakata, Yoshio Shiromoto, Hiroki Watanabe
  • Patent number: 5131942
    Abstract: A method and apparatus for producing molten metal from powder state ore through smelting process to be performed in a shaft furnace, utilized the reducing material having grain size greater than that n-times of the gas flow velocity corresponding grain size to charge from the top of a shaft furnace for forming fluidized bed at the upper section of the furnace and a reducing material filled section below the fluidized bed. The method and apparatus for smelting the powder state ore also takes the reducing material having smaller grain size to be blown into the furnace through tuyeres.
    Type: Grant
    Filed: May 4, 1990
    Date of Patent: July 21, 1992
    Assignee: Kawasaki Steel Corporation
    Inventors: Hideshi Katayama, Takao Hamada, Shinobu Takeuchi, Takashi Ushijima, Hideyuki Momokawa, Hiroshi Itaya
  • Patent number: 4874427
    Abstract: A powdery or fine granular ore containing metal oxides is melted and refined by charging the ore and a part of a reducing gas discharged from a vertical type of melting and reducing furnace into a fluidized bed type of preliminary reducing furnace to preliminary reduce the ore therein, charging the preliminary reduced ore heated at a high temperature into the above described melting and reducing furnace and melting and reducing the ore by using a carbonaceous solid reducing agent and air or oxygen rich air heated at a high temperature and discharging the molten metal and the molten slag from the melting and reducing furnace. By using the preliminary reduction step, the pretreatment of the powdery or fine granular ore containing metal oxides, such as formation into pellets, sintered ores, briquets and the like can be omitted.
    Type: Grant
    Filed: December 2, 1987
    Date of Patent: October 17, 1989
    Assignee: Kawasaki Steel Corporation
    Inventors: Takao Hamada, Nobuo Tsuchiya, Toshihiro Inatani, Eiji Katayama, Toshimitsu Koitabashi, Kyoji Okabe, Mitsuo Sumito, Yoshiyasu Takada
  • Patent number: 4733619
    Abstract: A powder feeder, includes a cylinder body connected to a gas blow pipe for fluidizing a powder at its bottom portion; a porous plate crossing the lower portion of the cylinder body above a gas blow hole; a partition plate which divides the interior of the cylinder body into a powder supply side and a delivery side and has a slit for communicating the supply and delivery sides with each other at its upper portion; a powder supply pipe connected to the lower portion of the cylinder body at the supply side to be inclined downward toward a connecting portion; and a powder delivery pipe connected to the lower portion of the cylinder body at the delivery side to be inclined downward in a delivery direction.
    Type: Grant
    Filed: December 1, 1986
    Date of Patent: March 29, 1988
    Assignee: Ube Industries
    Inventors: Sadahiko Maeda, Yasumasa Idei, Toshihiro Inatani, Mitsuo Sumito, Takao Hamada, Shunji Hamada
  • Patent number: 4505745
    Abstract: A method of producing amorphous mother alloy is disclosed, which comprises charging raw material, carbonaceous reducing agent and secondary material into a smelting furnace and then smelting to produce Fe-B-Si series molten metal having a B-Si composition range which lies within an area represented by the trapezoidal area abcd shown in FIG. 2 of the accompanying drawings. The amorphous mother alloy is used to produce an amorphous starting material by diluting with molten steel.
    Type: Grant
    Filed: August 18, 1983
    Date of Patent: March 19, 1985
    Assignee: Kawasaki Steel Corporation
    Inventors: Takao Hamada, Nobuo Tsuchiya, Yo Ito, Toshihiro Inatani, Yoshiyasu Takada, Mitsuo Sumito, Toshimitsu Koitabashi, Hideshi Katayama