Abstract: The present invention relates to a semiconductor device e.g., a CMOS, comprising a denuded region and a bulk-defect region, as well as a process for producing, e.g., CMOS. In a conventional CMOS, the distance (dp) between the bulk-defect region and p.sup.+ -type source or drain region (dp) is greater than the distance (dn) between the bulk-defect region and the p well (dn). As a result, a leakage current can be generated in the PN junction. In order to eliminate the problems caused due to dp>dn, the present invention forms in a semiconductor substrate a bulk-defect region having a depth which is nonuniform in accordance with the nonuniform depth of the semiconductor elements.

Abstract: The present invention relates to semiconductor device, a e.g., a CMOS, comprising a denuded region and a bulk-defect region, as well as the process for producing, e.g., a CMOS. In a conventional CMOS, the distance (dp) between the bulk-defect region and P.sup.+ -type source of drain region--(dp)--is greater than the distance (dn) between the bulk--defect--region and the P well--(dn)--. As a result, a leakage current can be generated in the PN junction. In order to eliminate the problems caused due to dp>dn, the present invention forms in a--semiconductor-substrate a bulk-defect region having a depth which is nonuniform in accordance with the nonuniform depth of the semiconductor elements.