Abstract: A substrate processing apparatus and a substrate processing method capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a substrate processing tub, a phosphoric acid processing liquid supply unit, a circulation path, a SiO2 precipitation inhibitor supply unit and a mixing unit. The phosphoric acid processing liquid supply unit is configured to supply a phosphoric acid processing liquid used in performing an etching processing in the substrate processing tub. The circulation path is configured to circulate the phosphoric acid processing liquid supplied into the substrate processing tub. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor into the circulation path.

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a SiO2 precipitation inhibitor supply unit and a control unit. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor to be mixed into a phosphoric acid processing liquid used in performing an etching processing in a substrate processing tub. The control unit is configured to set a SiO2 precipitation inhibitor concentration contained in the phosphoric acid processing liquid based on a temperature of the phosphoric acid processing liquid, and configured to control a supply amount of the SiO2 precipitation inhibitor to achieve the set SiO2 precipitation inhibitor concentration.

Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.