Patents by Inventor Takao INOKUMA
Takao INOKUMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230145055Abstract: The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer.Type: ApplicationFiled: April 12, 2021Publication date: May 11, 2023Inventors: Hiromitsu Kato, Masahiko Ogura, Toshiharu Makino, Satoshi Yamasaki, Tsubasa Matsumoto, Norio Tokuda, Takao Inokuma
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Patent number: 11066757Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: November 2, 2018Date of Patent: July 20, 2021Assignees: Shin-Etsu Chemical Co., Ltd., National Institute of Advanced Industrial Science and Technology, National University Corporation Kanazawa UniversityInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Patent number: 10253426Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: February 28, 2017Date of Patent: April 9, 2019Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20190093253Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: November 2, 2018Publication date: March 28, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Patent number: 10100435Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: GrantFiled: February 28, 2017Date of Patent: October 16, 2018Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20170247811Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Publication number: 20170247814Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Patent number: 9711638Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.Type: GrantFiled: November 25, 2014Date of Patent: July 18, 2017Assignee: DENSO CORPORATIONInventors: Kazuhiro Oyama, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Daisuke Takeuchi, Satoshi Yamasaki, Norio Tokuda, Takao Inokuma, Takuma Minamiyama
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Publication number: 20160372590Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.Type: ApplicationFiled: November 25, 2014Publication date: December 22, 2016Inventors: Kazuhiro OYAMA, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Daisuke TAKEUCHI, Satoshi YAMASAKI, Norio TOKUDA, Takao INOKUMA, Takuma MINAMIYAMA