Abstract: In an RFIC provided in a semiconductor device according to an embodiment, a low-noise amplifier (41) for reception and a power amplifier (11) for transmission are connected to a common antenna connection terminal (5). Between the antenna connection terminal (5) and an LNA (41), a circuit (31) is connected to be used for impedance matching, and a semiconductor switch (SW1) is connected in parallel with the circuit (31).

Abstract: In an RFIC provided in a semiconductor device according to an embodiment, a low-noise amplifier (41) for reception and a power amplifier (11) for transmission are connected to a common antenna connection terminal (5). Between the antenna connection terminal (5) and an LNA (41), a circuit (31) is connected to be used for impedance matching, and a semiconductor switch (SW1) is connected in parallel with the circuit (31).

Abstract: A semiconductor device includes a plurality of first inductors having a spiral shape and provided in a modulator of a transmitting side, and a plurality of second inductors having a horseshoe shape and provided in an oscillator of a receiving side, the plurality of second inductors being arranged such that an opening of plurality of second inductors is disposed opposite to the plurality of first inductors. The semiconductor device performs a transmission process and a reception process using a radio wave.

Abstract: A semiconductor device includes a plurality of first inductors having a spiral shape and provided in a modulator of a transmitting side, and a plurality of second inductors having a horseshoe shape and provided in an oscillator of a receiving side, the plurality of second inductors being arranged such that an opening of plurality of second inductors is disposed opposite to the plurality of first inductors. The semiconductor device performs a transmission process and a reception process using a radio wave.

Abstract: A wireless transceiver includes a semiconductor device configured to perform a transmission process and a reception process using a radio wave, the semiconductor device including a transmission unit and a reception unit. The wireless transceiver further includes an antenna configured to transmit an output signal from the transmission unit and provide a received input signal to the reception unit, and a baseband circuit configured to receive an output signal from the reception unit and output the output signal to the transmission unit.

Abstract: A wireless transceiver includes a semiconductor device configured to perform a transmission process and a reception process using a radio wave, the semiconductor device including a transmission unit and a reception unit. The wireless transceiver further includes an antenna configured to transmit an output signal from the transmission unit and provide a received input signal to the reception unit, and a baseband circuit configured to receive an output signal from the reception unit and output the output signal to the transmission unit.

Abstract: A semiconductor device is configured to perform a transmission process and a reception process using a radio wave, includes a transmission unit configured to perform the transmission process, and includes a modulator having a first inductor of a spiral shape, and a reception unit configured to perform the reception process, which includes a local oscillator having a second inductor. The second inductor includes a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction. The second direction and the third direction intersect with the first direction. The first portion, second portion and third portion include a same conductor layer. The second portion has an end which is not connected with the first portion. The third portion has another end which is not connected with the first portion, and the end of the second portion and said another end of the third portion are located apart in a plan view.

Abstract: A wireless communication device includes a radio frequency integrated circuit (RFIC) which includes a filter circuit operable to pass a desired signal component of a high-frequency signal inputted and operable to attenuate a harmonic component of an integral multiple of the desired signal. The filter circuit includes a first inductor and a second inductor coupled to a signal line transmitting the high-frequency signal. A first input terminal and a second input terminal are operable to receive the high-frequency signal as a differential signal, wherein the first inductor and the second inductor are formed by a first differential inductor and a second differential inductor are coupled between the first input terminal and the second input terminal.

Abstract: A semiconductor device includes a filter circuit operable to pass a desired signal component of a high-frequency signal inputted and operable to attenuate a harmonic component of an integral multiple of the desired signal, wherein the filter circuit includes a first inductor and a second inductor coupled in series to a signal line transmitting the high-frequency signal, a first variable capacitor coupled between a power supply line and a node of the first inductor and the second inductor, and a second variable capacitor coupled between the signal line and the power supply line.

Abstract: A semiconductor device is configured to perform a transmission process and a reception process using a radio wave, includes a transmission unit configured to perform the transmission process, and includes a modulator having a first inductor of a spiral shape, and a reception unit configured to perform the reception process, which includes a local oscillator having a second inductor. The second inductor includes a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction. The second direction and the third direction intersect with the first direction. The first portion, second portion and third portion include a same conductor layer. The second portion has an end which is not connected with the first portion. The third portion has another end which is not connected with the first portion, and the end of the second portion and said another end of the third portion are located apart in a plan view.

Abstract: A semiconductor device includes a low noise amplifier configured to amplify a radio signal from an antenna and output an reception signal, a down converter configured to down-convert the reception signal, a first divider coupled with the down converter, a first local oscillator coupled with the first divider, a modulator configured to modulate a transmission signal, a second divider coupled with the modulator, and a second local oscillator coupled with the second divider. The modulator includes a first inductor of a spiral shape, the local oscillator includes a second inductor of a horse-shape having an opening, and the opening of the second inductor is disposed opposite to the first inductor.

Abstract: A semiconductor device includes a low noise amplifier configured to amplify a radio signal from an antenna and output an reception signal, a down converter configured to down-convert the reception signal, a first divider coupled with the down converter, a first local oscillator coupled with the first divider, a modulator configured to modulate a transmission signal, a second divider coupled with the modulator, and a second local oscillator coupled with the second divider. The modulator includes a first inductor of a spiral shape, the local oscillator includes a second inductor of a horse-shape having an opening, and the opening of the second inductor is disposed opposite to the first inductor.

Abstract: A semiconductor device includes: a spiral-shaped inductor formed to include a metal wire; and a horseshoe-shaped inductor formed to include the metal wire. The horseshoe-shaped inductor is arranged such that an opening of the horseshoe-shaped inductor is disposed opposite to the spiral-shaped inductor. Accordingly, unnecessary wave (spurious) output from a transmitting unit can be reduced as small as possible.

Abstract: A semiconductor device includes a filter circuit operable to pass a desired signal component of a high-frequency signal inputted and operable to attenuate a harmonic component of an integral multiple of the desired signal, wherein the filter circuit includes a first inductor and a second inductor coupled in series to a signal line transmitting the high-frequency signal, a first variable capacitor coupled between a power supply line and a node of the first inductor and the second inductor, and a second variable capacitor coupled between the signal line and the power supply line.

Abstract: A semiconductor device includes: a spiral-shaped inductor formed to include a metal wire; and a horseshoe-shaped inductor formed to include the metal wire. The horseshoe-shaped inductor is arranged such that an opening of the horseshoe-shaped inductor is disposed opposite to the spiral-shaped inductor. Accordingly, unnecessary wave (spurious) output from a transmitting unit can be reduced as small as possible.

Abstract: A quadrature modulator has first to fourth transistors, a first node, a second node, and a first output node. A non-inversion in-phase analog signal, an inversion in-phase analog signal, a non-inversion quadrature analog signal, and an inversion quadrature analog signal are supplied to input electrodes of the first to fourth transistors, respectively. Control electrodes of the first to fourth transistors respond to a non-inversion in-phase RF signal, an inversion in-phase RF signal, a non-inversion quadrature RF signal, and an inversion quadrature RF signal, respectively. Output electrodes of the first and second transistors are coupled to the first node, and output electrodes of the third and fourth transistors are coupled to the second node. A first high-pass filter is coupled between the first node and the first output node, and a second high-pass filter is coupled between the second node and the first output node.

Abstract: A quadrature modulator has first to fourth transistors, a first node, a second node, and a first output node. A non-inversion in-phase analog signal, an inversion in-phase analog signal, a non-inversion quadrature analog signal, and an inversion quadrature analog signal are supplied to input electrodes of the first to fourth transistors, respectively. Control electrodes of the first to fourth transistors respond to a non-inversion in-phase RF signal, an inversion in-phase RF signal, a non-inversion quadrature RF signal, and an inversion quadrature RF signal, respectively. Output electrodes of the first and second transistors are coupled to the first node, and output electrodes of the third and fourth transistors are coupled to the second node. A first high-pass filter is coupled between the first node and the first output node, and a second high-pass filter is coupled between the second node and the first output node.

Abstract: A first gate opens obliquely downward, and maintains the posture, rendering the slope angle of the bottom surface thereof steeper than that of the bottom surface of the second gate. Thus, the bottom surface of the second gate forms a gentle slope sliding surface, and the bottom surface of the first gate forms a steep slope sliding surface. Then articles drop following the shape of a parabola toward the bottom surface of the first gate on the steep slope side, with momentum gained from sliding down the bottom surface of the second gate on the gentle slope side, and then change the sliding trajectory inward upon bumping into the bottom surface of the first gate. The articles then drop following the shape of a parabola toward the center area of a dispersal table, with momentum gained from sliding down the bottom surface of the first gate.

Abstract: A first gate opens obliquely downward, and maintains the posture, rendering the slope angle of the bottom surface thereof steeper than that of the bottom surface of the second gate. Thus, the bottom surface of the second gate forms a gentle slope sliding surface, and the bottom surface of the first gate forms a steep slope sliding surface. Then articles drop following the shape of a parabola toward the bottom surface of the first gate on the steep slope side, with momentum gained from sliding down the bottom surface of the second gate on the gentle slope side, and then change the sliding trajectory inward upon bumping into the bottom surface of the first gate. The articles then drop following the shape of a parabola toward the center area of a dispersal table, with momentum gained from sliding down the bottom surface of the first gate.

Abstract: A sprayable adhesive composition superior in removability from a surface of paper and making it difficult to cause an adhesive transfer phenomenon to a surface to be affixed, which is constructed by dispersing adhesive microspheres having an average particle diameter of 10 to 100 .mu.m obtained by subjecting a composition containing a (meth)acrylate, a water-soluble monomer copolymerizable with the (meth)acrylate, and an oil-soluble polyfunctional monomer having two or more polyumerizalbe unsaturated groups in a molecule to aqueous suspension copolymerization under the presence of an oil-soluble polymerization initiator and a surface-active agent in an aerosol-dispersion medium containing a first solvent for maintaining dispersion properties of the adhesive microspheres so as to exhibit sprayable properties, a second solvent for restraining the swelling of the adhesive microspheres, and an aerosol propellant.