Abstract: The present invention provides a sterilized-liquefied gas producing apparatus including: a liquefied gas reservoir; a source-gas supplier that supplies a source gas to the liquefied gas reservoir; a cooler that cools down an inside of the liquefied gas reservoir to liquefy the source gas; a supply pipe that connects the source-gas supplier and the liquefied gas reservoir; a sterilization filter provided at the supply pipe; a sterilizer that heats and sterilizes a sterilization region by high-temperature saturated water vapor, the sterilization region being located further downstream than the sterilization filter; and a dryer that removes moisture generated by the heat sterilization to dry the sterilization region.

Abstract: A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.

Abstract: A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si—H bonds equal to or less than 6.0×1021 cm?3, and is formed of silicon nitride.

Abstract: A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si—H bonds equal to or less than 6.0×1021 cm?3, and is formed of silicon nitride.

Abstract: A technology for protecting a valve seat inside a collection tank from the adherence of frozen particles in a vacuum freeze-drying apparatus and a frozen particle manufacturing method. The inside of a vacuum tank and a collection tank are vacuum evacuated; a raw material liquid is injected into the vacuum tank to produce frozen particles; and the frozen particles are piled up on a surface of a heating/cooling shelf. When the frozen particles on the heating/cooling shelf are transferred into the collection tank through the inside of an auxiliary pipe, the frozen particles do not adhere to a valve seat which surrounds an opening of a main pipe inside the collection tank.

Abstract: A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.

Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Abstract: A technology for protecting a valve seat inside a collection tank from the adherence of frozen particles in a vacuum freeze-drying apparatus and a frozen particle manufacturing method. The inside of a vacuum tank and a collection tank are vacuum evacuated; a raw material liquid is injected into the vacuum tank to produce frozen particles; and the frozen particles are piled up on a surface of a heating/cooling shelf. When the frozen particles on the heating/cooling shelf are transferred into the collection tank through the inside of an auxiliary pipe, the frozen particles do not adhere to a valve seat which surrounds an opening of a main pipe inside the collection tank.

Abstract: [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a collection rate of a raw material without a need for providing a member such as a baffle plate or the like. [Solving Means] The freeze-drying apparatus 100 includes: a container 4 to store a raw material fluid F; a freezing chamber 10 being a vacuum chamber; a vacuum pump 1 to exhaust the freezing chamber 10; and an injection mechanism 25 to inject the raw material fluid F stored in the container 4 into the freezing chamber 10. The cold trap 20 is arranged within the freezing chamber 10, and hence a phenomenon that the raw material is discharged to the outside of the vacuum chamber together with a vapor as in the past can be prevented. With this, the collection rate of the raw material can be increased. Further, it becomes unnecessary to provide the baffle plate or the like for preventing the phenomenon in vicinity of an exhaust port of the vacuum chamber.

Abstract: [Object] To provide a freeze-drying apparatus capable of achieving an increase of a processing capacity without causing a variation of a particle diameter. [Solving Means] A freeze-drying apparatus 100 according to an embodiment of the present invention includes: a freezing chamber 10 forming a vacuum chamber; and an injector 25. The injector 25 includes a tube member 29 provided to the vacuum chamber, and a nozzle 9 including a plurality of injection holes 92 open to an inside of the tube member 29. The injector 25 injects a raw material fluid F, which is fed to the tube member 29, from the nozzle 9 into the vacuum chamber. The respective injection holes 92 are each formed so as to be open to the inside of the tube member 29, and hence the raw material fluid F is injected through the respective injection holes 92 at the same injection pressure. With this, it is possible to achieve the increase of the processing capacity without causing the variation of the particle diameter.

Abstract: A semiconductor device having a copper interconnection with high electromigration resistance is provided. A semiconductor device of the present invention includes an interconnection layer formed by forming a groove or a hole in an insulating film formed on a substrate, forming a barrier layer on the resulting substrate, forming a copper seed layer on the barrier layer, forming a copper-plated layer by an electrolytic plating method by use of this copper seed layer, and removing the copper-plated layer and the copper seed layer on the surface, wherein the copper seed layer comprises a plurality of layers including a small grain layer and a large grain layer, having different crystal grain sizes from each other, and the small grain layer is in contact with the barrier layer.

Abstract: A transfer needle comprises: a liquid-specific member; and a medicament-specific member to be separably connected or joined to the liquid-specific member in a liquid-tight state. The liquid-specific member comprises: a liquid-specific hollow needle projecting toward the opposite side from the medicament-specific member. The medicament-specific member comprises: a medicament-specific hollow needle projecting toward the opposite side from the liquid-specific member and communicating with the liquid-specific hollow needle. A female luer is provided on at least one of the liquid-specific member and the medicament-specific member at a position opposing to the other. The female luer communicates with the one hollow needle and is separably connected with an injection needle connecting portion of a syringe in a liquid-tight state.

Abstract: A transfer needle comprises: a liquid-specific member; and a medicament-specific member to be separably connected or joined to the liquid-specific member in a liquid-tight state. The liquid-specific member comprises: a liquid-specific hollow needle projecting toward the opposite side from the medicament-specific member. The medicament-specific member comprises: a medicament-specific hollow needle projecting toward the opposite side from the liquid-specific member and communicating with the liquid-specific hollow needle. A female lure is provided on at least one of the liquid-specific member and the medicament-specific member at a position opposing to the other. The female lure communicates with the one hollow needle and is separably connected with an injection needle connecting portion of a syringe in a liquid-tight state.

Abstract: A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and/or a trench in the interlayer insulating film, burying the hole and/or trench with a conductive material and forming an (n+1)-th layer wiring on the hole and/or trench.

Abstract: A method of fabricating a semiconductor device first involves forming a conductive layer made of copper or its alloy as a principal component on a semiconductor substrate. Then, forming an insulating layer on the conductive layer. Next, forming an opening in the insulating layer with use of a resist pattern as a mask so as to reach the conductive layer; subjecting the resulting semiconductor substrate to an oxidizing/ashing treatment in an oxygen plasma atmosphere to remove the resist pattern and to oxidize at least an inner surface of the opening and finally, washing at least the inner surface of the opening with a solution containing citric acid as a principal component at normal temperature.

Abstract: A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and/or a trench in the interlayer insulating film, burying the hole and/or trench with a conductive material and forming an (n+1)-th layer wiring on the hole and/or trench.

Abstract: A gasket comprises a thin plate to be arranged between confronting surfaces of a cylinder block and a cylinder head. The thin plate has attached with adhesives susceptible to plastic deformation at areas where the thin plate comes in mating with the confronting surfaces. The adhesives come in adhesion with the confronting surfaces to restrain relative displacement that might occur constantly between the mating surfaces of the plate and the confronting surfaces. This contributes to keeping the gasket stiff. The adhesives of plastic deformation property are arranged along peripheries of cylinder bore holes at the areas where the thin plate comes in mating with the confronting surfaces. The adhesives, when have come in adhesion with the confronting surfaces, not only establish the reliable head-to-block sealing, but also restrain the displacement that might occurs constantly between the mating surfaces, in favor of plastic deformation of the adhesives.

Abstract: A process for manufacturing a semiconductor device having a buried electrically conductive film includes: a first step of, with heating at a first temperature a substrate on which an insulating film having a depression is formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression, on a surface of the insulating film by a metal organic chemical vapor deposition method; and a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.

Abstract: A process for fabricating a nonvolatile semiconductor memory device has one transistor and one ferroelectric capacitor electrically connected to each other by a contact plug, which comprising forming a transistor; forming an inter-layer insulating film, at least an upper surface portion thereof being a titanium oxide film; forming a capacitor lower electrode; and forming a capacitor insulating film and a capacitor upper electrode, wherein the lower electrode forming step comprises: depositing a titanium nitride film and a platinum film on the titanium oxide film; etching the platinum film with a first etching gas adapted to suppress deposition of substances including platinum; and etching the titanium nitride film with a second etching gas having a high etching selectivity to the titanium oxide film.