Patents by Inventor Takao Kinoshita

Takao Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10323716
    Abstract: A damper device includes first inner springs configured to transmit a torque between a drive member and an intermediate member, second inner springs configured to transmit a torque between the intermediate member and a driven member, and a rotary inertia mass damper including a sun gear serving as a mass body rotating with relative rotation of the drive member to the driven member. The rotary inertia mass damper is provided in parallel to a torque transmission path including the intermediate member, the first inner springs and the second inner springs. A damping ratio ? of the intermediate member determined based on a moment of inertia J2 of the intermediate member and rigidities k1 and k2 of the first and the second inner springs and is less than a value.
    Type: Grant
    Filed: December 25, 2015
    Date of Patent: June 18, 2019
    Assignees: AISIN AW CO., LTD., AISIN AW INDUSTRIES CO., LTD
    Inventors: Takuya Yoshikawa, Aki Ogawa, Tomonori Kinoshita, Yuji Kanyama, Makoto Yamaguchi, Kazuyoshi Ito, Hiroki Nagai, Masaki Wajima, Takao Sakamoto, Kazuhiro Itou, Yoshihiro Takikawa, Yoichi Oi
  • Publication number: 20190015534
    Abstract: The present invention provides a sterilized-liquefied gas producing apparatus including: a liquefied gas reservoir; a source-gas supplier that supplies a source gas to the liquefied gas reservoir; a cooler that cools down an inside of the liquefied gas reservoir to liquefy the source gas; a supply pipe that connects the source-gas supplier and the liquefied gas reservoir; a sterilization filter provided at the supply pipe; a sterilizer that heats and sterilizes a sterilization region by high-temperature saturated water vapor, the sterilization region being located further downstream than the sterilization filter; and a dryer that removes moisture generated by the heat sterilization to dry the sterilization region.
    Type: Application
    Filed: May 11, 2017
    Publication date: January 17, 2019
    Inventors: Tsuyoshi YOSHIMOTO, Yoichi OHINATA, Takao KINOSHITA, Shinji FURUYA, Naoto SUZUKI, Masayoshi HIRUMA, Shinji TAKASAKI
  • Patent number: 9917011
    Abstract: A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: March 13, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Satoshi Morishita, Tadashi Yasui, Takao Kinoshita, Tomotoshi Satoh
  • Patent number: 9824887
    Abstract: A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si—H bonds equal to or less than 6.0×1021 cm?3, and is formed of silicon nitride.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: November 21, 2017
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshimi Tanimoto, Koichiro Fujita, Yushi Inoue, Takao Kinoshita
  • Publication number: 20170301535
    Abstract: A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si—H bonds equal to or less than 6.0×1021 cm?3, and is formed of silicon nitride.
    Type: Application
    Filed: August 27, 2015
    Publication date: October 19, 2017
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yoshimi TANIMOTO, Koichiro FUJITA, Yushi INOUE, Takao KINOSHITA
  • Patent number: 9759485
    Abstract: A technology for protecting a valve seat inside a collection tank from the adherence of frozen particles in a vacuum freeze-drying apparatus and a frozen particle manufacturing method. The inside of a vacuum tank and a collection tank are vacuum evacuated; a raw material liquid is injected into the vacuum tank to produce frozen particles; and the frozen particles are piled up on a surface of a heating/cooling shelf. When the frozen particles on the heating/cooling shelf are transferred into the collection tank through the inside of an auxiliary pipe, the frozen particles do not adhere to a valve seat which surrounds an opening of a main pipe inside the collection tank.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: September 12, 2017
    Assignee: ULVAC, INC.
    Inventors: Masaki Ito, Youichi Oohinata, Katsuhiko Ito, Takashi Hanamoto, Takao Kinoshita
  • Publication number: 20170005001
    Abstract: A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.
    Type: Application
    Filed: April 30, 2015
    Publication date: January 5, 2017
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Satoshi MORISHITA, Tadashi YASUI, Takao KINOSHITA, Tomotoshi SATOH
  • Patent number: 8963165
    Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: February 24, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masahiro Araki, Shinya Yoshida, Haruhisa Takiguchi, Atsushi Ogawa, Takao Kinoshita, Tohru Murata, Takeshi Funaki, Masayuki Hoteida
  • Publication number: 20130277684
    Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.
    Type: Application
    Filed: December 21, 2011
    Publication date: October 24, 2013
    Inventors: Masahiro Araki, Shinya Yoshida, Haruhisa Takiguchi, Atsushi Ogawa, Takao Kinoshita, Tohru Murata, Takeshi Funaki, Masayuki Hoteida
  • Publication number: 20130239430
    Abstract: A technology for protecting a valve seat inside a collection tank from the adherence of frozen particles in a vacuum freeze-drying apparatus and a frozen particle manufacturing method. The inside of a vacuum tank and a collection tank are vacuum evacuated; a raw material liquid is injected into the vacuum tank to produce frozen particles; and the frozen particles are piled up on a surface of a heating/cooling shelf. When the frozen particles on the heating/cooling shelf are transferred into the collection tank through the inside of an auxiliary pipe, the frozen particles do not adhere to a valve seat which surrounds an opening of a main pipe inside the collection tank.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 19, 2013
    Applicant: ULVAC, Inc.
    Inventors: Masaki ITO, Youichi OOHINATA, Katsuhiko ITO, Takashi HANAMOTO, Takao KINOSHITA
  • Publication number: 20110113644
    Abstract: [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a collection rate of a raw material without a need for providing a member such as a baffle plate or the like. [Solving Means] The freeze-drying apparatus 100 includes: a container 4 to store a raw material fluid F; a freezing chamber 10 being a vacuum chamber; a vacuum pump 1 to exhaust the freezing chamber 10; and an injection mechanism 25 to inject the raw material fluid F stored in the container 4 into the freezing chamber 10. The cold trap 20 is arranged within the freezing chamber 10, and hence a phenomenon that the raw material is discharged to the outside of the vacuum chamber together with a vapor as in the past can be prevented. With this, the collection rate of the raw material can be increased. Further, it becomes unnecessary to provide the baffle plate or the like for preventing the phenomenon in vicinity of an exhaust port of the vacuum chamber.
    Type: Application
    Filed: July 8, 2009
    Publication date: May 19, 2011
    Applicant: ULVAC, INC.
    Inventors: Masaki Itou, Kyuzo Nakamura, Takeo Kato, Katsuhiko Itou, Takao Kinoshita
  • Publication number: 20110113643
    Abstract: [Object] To provide a freeze-drying apparatus capable of achieving an increase of a processing capacity without causing a variation of a particle diameter. [Solving Means] A freeze-drying apparatus 100 according to an embodiment of the present invention includes: a freezing chamber 10 forming a vacuum chamber; and an injector 25. The injector 25 includes a tube member 29 provided to the vacuum chamber, and a nozzle 9 including a plurality of injection holes 92 open to an inside of the tube member 29. The injector 25 injects a raw material fluid F, which is fed to the tube member 29, from the nozzle 9 into the vacuum chamber. The respective injection holes 92 are each formed so as to be open to the inside of the tube member 29, and hence the raw material fluid F is injected through the respective injection holes 92 at the same injection pressure. With this, it is possible to achieve the increase of the processing capacity without causing the variation of the particle diameter.
    Type: Application
    Filed: July 8, 2009
    Publication date: May 19, 2011
    Applicant: ULVAC, INC.
    Inventors: Masaki Itou, Kyuzo Nakamura, Takeo Kato, Katsuhiko Itou, Takao Kinoshita
  • Publication number: 20090236744
    Abstract: A semiconductor device having a copper interconnection with high electromigration resistance is provided. A semiconductor device of the present invention includes an interconnection layer formed by forming a groove or a hole in an insulating film formed on a substrate, forming a barrier layer on the resulting substrate, forming a copper seed layer on the barrier layer, forming a copper-plated layer by an electrolytic plating method by use of this copper seed layer, and removing the copper-plated layer and the copper seed layer on the surface, wherein the copper seed layer comprises a plurality of layers including a small grain layer and a large grain layer, having different crystal grain sizes from each other, and the small grain layer is in contact with the barrier layer.
    Type: Application
    Filed: February 23, 2006
    Publication date: September 24, 2009
    Inventor: Takao Kinoshita
  • Patent number: 7294122
    Abstract: A transfer needle comprises: a liquid-specific member; and a medicament-specific member to be separably connected or joined to the liquid-specific member in a liquid-tight state. The liquid-specific member comprises: a liquid-specific hollow needle projecting toward the opposite side from the medicament-specific member. The medicament-specific member comprises: a medicament-specific hollow needle projecting toward the opposite side from the liquid-specific member and communicating with the liquid-specific hollow needle. A female luer is provided on at least one of the liquid-specific member and the medicament-specific member at a position opposing to the other. The female luer communicates with the one hollow needle and is separably connected with an injection needle connecting portion of a syringe in a liquid-tight state.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: November 13, 2007
    Assignee: NIPRO Corporation
    Inventors: Tomohiko Kubo, Shuji Hasegawa, Yoshiyuki Sunaga, Takao Kinoshita
  • Publication number: 20050033260
    Abstract: A transfer needle comprises: a liquid-specific member; and a medicament-specific member to be separably connected or joined to the liquid-specific member in a liquid-tight state. The liquid-specific member comprises: a liquid-specific hollow needle projecting toward the opposite side from the medicament-specific member. The medicament-specific member comprises: a medicament-specific hollow needle projecting toward the opposite side from the liquid-specific member and communicating with the liquid-specific hollow needle. A female lure is provided on at least one of the liquid-specific member and the medicament-specific member at a position opposing to the other. The female lure communicates with the one hollow needle and is separably connected with an injection needle connecting portion of a syringe in a liquid-tight state.
    Type: Application
    Filed: July 16, 2004
    Publication date: February 10, 2005
    Inventors: Tomohiko Kubo, Shuji Hasegawa, Yoshiyuki Sunaga, Takao Kinoshita
  • Patent number: 6511908
    Abstract: A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and/or a trench in the interlayer insulating film, burying the hole and/or trench with a conductive material and forming an (n+1)-th layer wiring on the hole and/or trench.
    Type: Grant
    Filed: June 22, 2001
    Date of Patent: January 28, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takao Kinoshita, Kunihiko Orita
  • Patent number: 6376364
    Abstract: A method of fabricating a semiconductor device first involves forming a conductive layer made of copper or its alloy as a principal component on a semiconductor substrate. Then, forming an insulating layer on the conductive layer. Next, forming an opening in the insulating layer with use of a resist pattern as a mask so as to reach the conductive layer; subjecting the resulting semiconductor substrate to an oxidizing/ashing treatment in an oxygen plasma atmosphere to remove the resist pattern and to oxidize at least an inner surface of the opening and finally, washing at least the inner surface of the opening with a solution containing citric acid as a principal component at normal temperature.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: April 23, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takao Kinoshita, Masato Kobayashi
  • Publication number: 20020001939
    Abstract: A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and/or a trench in the interlayer insulating film, burying the hole and/or trench with a conductive material and forming an (n+1)-th layer wiring on the hole and/or trench.
    Type: Application
    Filed: June 22, 2001
    Publication date: January 3, 2002
    Inventors: Takao Kinoshita, Kunihiko Orita
  • Patent number: 6328313
    Abstract: A gasket comprises a thin plate to be arranged between confronting surfaces of a cylinder block and a cylinder head. The thin plate has attached with adhesives susceptible to plastic deformation at areas where the thin plate comes in mating with the confronting surfaces. The adhesives come in adhesion with the confronting surfaces to restrain relative displacement that might occur constantly between the mating surfaces of the plate and the confronting surfaces. This contributes to keeping the gasket stiff. The adhesives of plastic deformation property are arranged along peripheries of cylinder bore holes at the areas where the thin plate comes in mating with the confronting surfaces. The adhesives, when have come in adhesion with the confronting surfaces, not only establish the reliable head-to-block sealing, but also restrain the displacement that might occurs constantly between the mating surfaces, in favor of plastic deformation of the adhesives.
    Type: Grant
    Filed: November 1, 1999
    Date of Patent: December 11, 2001
    Assignee: Nippon Gasket Co., Ltd.
    Inventors: Minoru Teranishi, Takao Kinoshita
  • Patent number: 6156656
    Abstract: A process for manufacturing a semiconductor device having a buried electrically conductive film includes: a first step of, with heating at a first temperature a substrate on which an insulating film having a depression is formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression, on a surface of the insulating film by a metal organic chemical vapor deposition method; and a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.
    Type: Grant
    Filed: November 18, 1999
    Date of Patent: December 5, 2000
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masato Kobayashi, Takao Kinoshita