Abstract: In a solid-state image sensor, a semiconductor structure having storage sections and a transfer section is formed in a substrate and an insulating film is formed on the substrate. Charge transfer electrodes are buried in the insulating film above the transfer section and pixel electrodes are formed on the insulating film and are electrically connected to the storage sections through electrodes, respectively. A photoconductive film for converting to incident light rays to electrical charges is formed on the insulating film, a barrier layer is formed on the film and a transparent electrode is formed on the barrier layer. Electrodes and semiconductor layers are buried in the insulating film such that each of the semiconductor layers is partly contacted to the photoconductive film, thereby a diode structure is formed by the photoconductive film, the semiconductor layer and the pixel electrodes.

Abstract: In a solid state image sensor, first electrodes corresponding to pixels are arranged in a predetermined interval on a CCD structure. The first electrodes are electrically connected to storage sections of the CCD structure and electrically insulated from a transferring section of the CCD structure. Second electrodes are arranged in a predetermined interval on a flat surface of an insulating layer formed on the first electrodes and are electrically connected to the first electrodes. A photoconductive film for converting incident light rays to charges is formed on the second electrodes. A third electrode is formed on the photoconductive film through a barrier layer. Fourth electrodes which are electrically connected to the photoconductive film and electrically insulated from the second electrodes are barried in the insulating layer. An external voltage is applied to the fourth electrode.

Abstract: A solid state imaging device having a semiconductor substrate including charge storage sections and charge transferring sections, a photoconductive layer provided on the semiconductor substrate, and a transparent electrode formed on the photoconductive layer. After transferring the charges in the charge storage sections to the charge transferring sections, the transparent electrode is applied with high voltage to release trapped charges at the trap level of the photoconductive layer. Thereby highlight image lag can be reduced.