Abstract: A magnetostatic wave device includes a Gd3Ga5O12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd3Ga5O12 substrate by liquid-phase epitaxy. A transducer operates for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20°≦|&thgr;1+&thgr;2|≦35°, where “&thgr;1” denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and “&thgr;2” denotes an angle between a transverse direction of the transducer and a specified direction.

Abstract: A magnetostatic wave device includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20.degree..ltoreq..vertline..theta..sub.1 +.theta..sub.2 .vertline..ltoreq.35.degree., where ".theta..sub.1 " denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and ".theta..sub.2 " denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer which is perpendicular to the longitudinal direction thereof.

Abstract: A reflection-type S/N enhancer includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. The magnetic thin film has a saturation magnetization in a range of 500 G to 1,100 G. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as .vertline..theta..sub.1 +.theta..sub.2 .vertline.<45.degree., where ".theta..sub.1 " denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and ".theta..sub.2 " denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer in a horizontal plane. The transverse direction of the transducer is perpendicular to the longitudinal direction thereof.