Abstract: The invention provides a composition for preventing or treating infectious diseases of a virus belonging to the Coronavirus family or Flavivirus family, the composition containing one or more substances selected from reduced glutathione or oxidized glutathione or pharmaceutically acceptable salts thereof and catechin, and a composition for preventing or treating infectious diseases of a virus belonging to the Coronavirus family or Flavivirus family, the composition containing reduced glutathione or oxidized glutathione or pharmaceutically acceptable salts thereof and catechin.

Abstract: An electrolytic solution for electrochemical elements which comprises an anion ingredient having one or more fluorine atoms and a cation ingredient which is imidazolium or an imidazolium derivative each having one or more hydrogen atoms, and which has at least five fluorine atom/hydrogen atom pairs in each of which the distance between the fluorine atom of the anion ingredient and the hydrogen atom of the cation ingredient is 2.7 ? or shorter. For example, the ionic association compound (I) shown below has been formed in the solution. This electrolytic imidazolium solution shows a higher withstand voltage than conventional electrolytic solutions containing 1,3,4,5-tetramethylimidazolium.

Abstract: The invention provides a composition for preventing or treating infectious diseases of a virus belonging to the Coronavirus family or Flavivirus family, the composition containing one or more substances selected from reduced glutathione or oxidized glutathione or pharmaceutically acceptable salts thereof and catechin, and a composition for preventing or treating infectious diseases of a virus belonging to the Coronavirus family or Flavivirus family, the composition containing reduced glutathione or oxidized glutathione or pharmaceutically acceptable salts thereof and catechin.

Abstract: There is provided an electrolytic solution which may significantly improve performance deterioration with time of an electrochemical capacitor. There is provided an electrolytic solution, comprising an electrolyte salt (A) shown as the following formula (1). In the formula, “R1,” “R2,” and “R3” independently represent an alkyl group having a carbon number of 1 to 3, “R4” and “R5” independently represent hydrogen atom or an alkyl group having a carbon number of 1 to 3, and “X?” represents a counterpart anion.

Abstract: The present invention relates to a water-soluble photosensitive compound represented by the general formula (1): or by the general formula (2): in the formula, X represents a direct bond, an alkylene group containing 1 to 5 carbon atoms, —CH2O—, —OCH2—, —CH2OCH2—, —O—, —S— or —SO2—, and Z represents —SO3?.Q+, —COO?.Q+ or —SO2NR2, in which Q+ represents Li+, Na+, K+ or N+R4 and R represents a hydrogen atom and/or an alkyl group containing 1 to 5 carbon atoms, said alkyl group optionally having one hydroxy, ether, carbonyl, carbonyloxy or oxycarbonyl group, wherein a photosensitive group has an absorption maximum wavelength of not longer than 305 nm in the ultraviolet absorption spectrum thereof.

Abstract: There is provided an electrolytic solution which may significantly improve performance deterioration with time of an electrochemical capacitor. There is provided an electrolytic solution, comprising an electrolyte salt (A) shown as the following formula (1). In the formula, “R1,” “R2,” and “R3” independently represent an alkyl group having a carbon number of 1 to 3, “R4” and “R5” independently represent hydrogen atom or an alkyl group having a carbon number of 1 to 3, and “X?” represent a counterpart anion.

Abstract: An edge reflection surface acoustic wave filter includes IDTs disposed on a top surface of a piezoelectric substrate, and surface acoustic waves of the Shear Horizontal type are reflected between opposite edges. At least one outermost electrode finger in the direction of propagation of surface acoustic waves on the side of at least one of the edges is removed. Accordingly, desired filter characteristics can readily be achieved without causing variations in filter characteristics, spurious components at frequencies lower than the passband are minimized, and selectivity is greatly improved.

Abstract: A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining a first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Abstract: A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining a first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Abstract: A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Abstract: A surface acoustic wave device includes a piezoelectric substrate having a pair of substrate edges and an upper surface therebetween. The piezoelectric substrate has at least one inner edge which is in contact with a main region and extends from the upper surface toward a bottom surface of the piezoelectric substrate inside one of the substrate edges. An interdigital transducer is provided on the main region of the piezoelectric substrate such that a SH type surface acoustic wave excited by the interdigital transducer and having a wavelength of &lgr; is reflected by the at least one inner edge. A distance L between the at least one inner edge and the corresponding one of the substrate edges is substantially equal to about 8&lgr; or less.

Abstract: A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Abstract: An edge-reflection surface acoustic wave filter includes IDTs disposed on a top surface of a piezoelectric substrate, and surface acoustic waves of the Shear Horizontal type are reflected between opposite edges. At least one outermost electrode finger in the direction of propagation of surface acoustic waves on the side of at least one of the edges is removed. Accordingly, desired filter characteristics can readily be achieved without causing variations in filter characteristics, spurious components at frequencies lower than the passband are minimized, and selectivity is greatly improved.

Abstract: An edge reflection type surface acoustic wave device utilizes a Shear Horizontal type surface acoustic wave and includes a surface acoustic wave substrate, and at least two interdigital transducers provided on one main surface of the surface acoustic wave substrate. First and second grooves are formed on the opposite ends in the surface acoustic wave propagation direction of the area where the interdigital transducer is provided. The first and second grooves extend from the one main surface of the surface acoustic wave substrate toward the other main surface thereof without reaching the other main surface. The grooves extend substantially perpendicularly to the surface acoustic wave propagation direction so as to define first and second edges for reflecting the surface acoustic wave. The first and second edges are defined by the inner sideively. walls of the first and second grooves, respectively.

Abstract: In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

Abstract: In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

Abstract: A new strain Lactobacillus sp. KPB-176, which does not possess strict selectivity for specific media and which involves no reduction in the productivity of polysaccharides even during subculture, was isolated from kefir grains. When this new strain is cultured on a medium containing milk whey and casamino acid or when on a medium containing carbohydrate and yeast extract, capsular polysaccharides are produced in high yields.