Abstract: An object is to control a picture display device from an image signal generating device (e.g. a PC) by using only a cable for transferring an image signal without using a USB cable or the like, so as to adjust the chromaticity, brightness, contrast, etc., in the picture display device and also to set r table data and OSD data and to switch the screen size etc. In a picture display control system, screen adjusting control information for adjusting the screen is added to an image signal outputted from an image signal generating device (1) and sent to a picture display device through an image signal cable, and the picture display device detects the screen adjusting control information from the image signal and adjusts the screen on the basis of the detected screen adjusting control information.

Abstract: An organic composite insulator (tube) and method for production thereof giving an external flashover characteristic, enabling a reduction of the cost, and enabling a reduction of the size of the insulator. The outside diameters of the insulator sheath body and watersheds at only the intermediate insulator sheath (3c) corresponding to the vicinity of the tip (6a) of the top of the inside electrode (6) are made larger than the outside diameters of the body and watersheds of the upper and lower insulator sheaths (3a) and (3b). The electric field of the sheath surface in the vicinity of the tip (6a) of the top of the inside electrode (6) exhibiting the maximum electric field in the large size insulator is weakened and the maximum electric field part is moved to the top portion of the sheath body and watersheds enlarged in inside diameter.

Abstract: A liquid crystal display device is provided. An image memory (4) stores therein input pixel data (Rin, Bin, Gin) on a frame-by-frame basis. Differencing circuits (23 to 25) calculate respective difference data ((Rin−Gpre), (Bin−Rin), (Gin−Bin)) on a pixel-by-pixel basis. Comparator circuits (27, 28, 29) output a pulse when the difference data is greater than a difference level (DLV). Counter memories (30 to 32) perform a counting operation each time the pulse is inputted thereto, and output respective counts (FLN_R, FLN_B, FLN_G) after the counting operation for one line. Comparator circuits (34 to 36) output a pulse to skip flag registers (37 to 39), respectively, when the respective counts are greater than a skip level. Skip flags (SPF_Ri, SPF_Bi, SPF_Gi) corresponding to a current line are set at “1.” A gate pulse for the line corresponding to the skip flags “1” is skipped. This reduces the write time of image data.

Abstract: Soymilk and tofu manufacturing method increases a ratio of fine soymilk particles to provide soymilk and tofu that have no grassy smell and are excellent in the taste and flavor, especially in the rich and milky taste. Raw material soybeans are dipped in softened water and ground while softened water is being added. Soy pulp thereof is separated to obtain soymilk. A high temperature, reduced pressure treatment is applied wherein the soymilk is first heated to 120 to 150° C. and then the pressure is reduced to −0.05 to −0.08 MPa. Thereafter, a high pressure treatment is applied wherein a double tube type heating device is employed, the soymilk flows within an inner tube and heating medium flows in a space between the inner tube and outer tube and the soymilk is treated under a pressure of 5 to 15 MPa and a temperature of 70 to 100° C. Or, a high pressure homogenizer is used and the soymilk is treated under a pressure of 20 to 150 MPa and a temperature of 70 to 80° C.

Abstract: An organic composite insulator (tube) and method for production thereof giving an external flashover characteristic, enabling a reduction of the cost, and enabling a reduction of the size of the insulator. The outside diameters of the insulator sheath body and watersheds at only the intermediate insulator sheath 3c corresponding to the vicinity of the tip 6a of the top of the inside electrode 6 are made larger than the outside diameters of the body and watersheds of the upper and lower insulator sheaths 3a and 3b. The electric field of the sheath surface in the vicinity of the tip 6a of the top of the inside electrode 6 exhibiting the maximum electric field in the large size insulator is weakened and the maximum electric field part is moved to the top portion of the sheath body and watersheds enlarged in inside diameter.

Abstract: An MPU changes the phase of a sampling clock signal by one step for each frame until the change in the phase reaches 360 degrees. An image quality detector portion sequentially receives a digital image signal to detect a maximum one of data about the absolute value of a difference between adjacent pixels in one frame as an image quality judgement data signal. The MPU detects a maximum one of all image quality judgement data to determine a phase at that time as an optimum phase of the sampling clock signal. The MPU then periodically checks image quality on a screen, and makes a real-time correction to the phase of the sampling clock signal if a temperature drift or the like occurs.

Abstract: An apparatus for turning the posture of flat articles (such as envelopes and post cards) can stably clamp and turn a flat article accurately, with a 90.degree. rotation. The turning apparatus has a cone roller that is disposed along a path for transporting the flat articles. A first plurality of idler pulleys are independently mounted to engage and be driven by the conical surface of the roller. A second plurality of idler pulleys are disposed on the upstream side of the conical surface, with respect to the first idler pulley. At least one running belt is stretched between the first and second idler pulleys. The angle between the conical surface and the running belt is small enough to reliably grip and turn the flat article.

Abstract: An MOS dynamic memory device is improved in operation by adding a cell plate voltage control circuit to terminals of the word lines and connected to respective cell plates. In operation, the cell plate is recharged after discharged during with a time which a word line remains driven.

Abstract: A wrapping transmission for effectively providing a transmission power by means of a pressing force of a wrapping belt against a transmission belt which travels from a driving pulley to a driven pulley, without expanding the transmission belt to excess. The wrapping belt is a woven cloth, on at least its surface, having a reduced friction factor so that wear of the transmission belt decreases and frictional heat between the wrapping belt and the transmission belt is reduced, thereby minimizing the loss of transmission power.

Abstract: A flat type cathode ray tube is disclosed which includes a flat envelope formed of a flat panel and a dish-shaped funnel, a first deflection system composed of a back electrode and a phosphor screen which are both located within the envelope in opposing relation with each other, a neck portion coupled to the envelope, the neck portion extending in the surface direction of the flat envelope having therein an electron gun, and a second deflection system formed of electro-static deflection plates which are so located within the envelope that they oppose each other across the path of the electron beam emitted from the electron gun to the first deflection system with respect to a thickness direction of the flat envelope. In this case, a projecting portion is provided from the peripheral portion of the funnel for molding material.

Abstract: In an insulating joint for a rubber or plastic insulated power cable, insulation shields are formed around insulation layers covering cable conductor joint portions of adjacent cables so that the insulation shields are longitudinally opposed to each other with a layer with high dielectric constant and high volume resistivity interposed therebetween. The layer comprises a mixture consisting of 100 parts by weight of a rubber or plastic as a base, 50 to 700 parts by weight of one or both of silicon carbide or zinc oxide, and 2 to 60 parts by weight of carbon black.

Abstract: A cathode ray tube which comprises: an evacuated envelope having at least one transparent flat portion, a fluorescent target arranged on the inner surface of the flat portion, an electron gun within the envelope in laterally spaced relation to the target for emitting an electron beam along a path parallel with the surface of the flat portion, a first deflecting device comprising the target, and an opposite electrode in the envelope for impinging the electron beam upon the target, a second deflecting device comprising a pair of plates to control the electron beam passing therebetween and arranged in the envelope for deflecting the electron beam perpendicularly to the surface of the flat portion, the pair of plates being connected with the opposite electrode and the anode electrode of the electron gun, respectively, and a vertical deflection signal being applied to the anode electrode, and a third deflecting device arranged adjacent to the envelope in cooperation with the pair of plates for concentrating deflec

Abstract: The disposed substrate bias generator comprises a capacitor including an electrically insulating film sandwiched between two electrodes one of which is disposed on one main face of a p.sup.- semiconductor substrate through another electrically insulating film, and a first, a second and a third N.sup.+ semiconductor region disposed in spaced relationship on the same main face. The first and second regions form a grounded source and a drain of an MOSFET connected to both its gate and one of the electrodes of the capacitor. The second and third regions form a source and a drain of another MOSFET connected to both its gate and the other main face of the substrate. A signal is applied to the other electrode of the capacitor.

Abstract: The disclosed semiconductor memory device has a multiplicity of memory cells disposed in rows and columns. Each memory cell includes two transistors extending in the thickness direction of the device for storing and interconnected into a flip-flop, two lateral transistors for performing the reading-out and writing-in operations respectively and two lateral transistors for addressing. Each of the lateral transistors includes an L-shaped emitter opposed to the base and collector of the associated thickness direction transistor lengthwise of the semiconductor substrate involved and also in the direction of thickness thereof.

Abstract: The disclosed linear amplifier comprises a grounded N.sup.+ semiconductor substrate on which an N layer is epitaxially grown. The N epitaxial layer includes three separate P diffusion regions. One of the outermost regions is connected to an input terminal and includes an N diffusion region to form an input, common emitter NPN transistor with the epitaxial layer while forming a feedback, common base PNP transistor with the intermediate P diffusion region and epitaxial layer. The remaining P region forms a load, common base PNP transistor with the intermediate P region and epitaxial layer and is connected to an injector terminal. The intermediate P region and N region are connected to an output terminal.