Abstract: An information processing system includes a first mobile terminal carried by a first user and a second mobile terminal carried by a second user accompanying the first user. The first mobile terminal includes a communication unit to communicate with a wireless tag attached to a personal belonging of the first user, an acquisition unit to acquire an inter-terminal distance between the first mobile terminal and the second mobile terminal, a detection unit to detect loss of at least the personal belonging or the first mobile terminal based on a communication status of the communication unit and the inter-terminal distance, and a transmission unit to transmit a detection result to the second mobile terminal. The second mobile terminal includes a reception unit to receive the detection result from the first mobile terminal and a control unit to control a notification indicating the detection result received by the reception unit.

Abstract: A semiconductor laser device is formed by laminating optical confinement layers and active layers so as to dispose each of said active layers between said optical confinement layers, wherein one of the opposite ends perpendicular to the junction planes of the individual layers in the semiconductor multi-layer film is coated with a low reflection film and the other of the ends is coated with a high reflection film, wherein the low reflection film is an Al2O3 film having a resistivity of 1×1012 &OHgr;·m or more, preferably 1×1013 &OHgr;·m or more, and having a stoichiometric ratio composition, which is deposited by, for example, an electron cyclotron resonance sputtering process.

Abstract: A surface emission semiconductor laser device has a semiconductor laminate mirror constituted of a plurality of pairs of InGaAS/InAlP films epitaxially grown on a GaAs or InGaAs substrate and a laser element bonded to the laminate mirror. The InAlP films of the laminate mirror are lattice-matched or not lattice-matched due to the amount of Al in the InAlP films. The laminate mirror has a high relative refractive index between the InGaAs and InAlP films and thus has a high reflectance to thereby improve the emission efficiency of the surface emission laser device.

Abstract: A relay node system, which receives a data stream having a series of data elements transmitted from a transmitting node and which re-outputs the data stream to a receiving node, comprises data receiving section for receiving the data stream transmitted from the transmitting node, storing section for temporarily storing data of the received data stream, and data transmitting section for reading the data stored in the storing section to be transmitted to the receiving node, wherein the storing section includes primary buffer section, having a high-speed memory, for temporarily storing data of the data stream, secondary buffer section having a memory capacity slower and larger than the primary buffer section, and data transfer section for executing a save processing and a restore processing, the save processing including processing for detecting danger of an overflow at an input side of the primary buffer section to transfer data from the primary buffer section to the secondary buffer section by a block unit, an

Abstract: A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 .mu.m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.

Abstract: A novolak resin for a positive photoresist is provided herein, which resin is produced by the addition condensation reaction of a phenol with formaldehyde. This novolak resin has improved heat resistant and sensitivity properties and the thickness retention of the novolak resins are very high.