Abstract: An optical fiber monitoring system monitors an inter-building optical fiber connecting a first building and a second building. The optical fiber monitoring system includes a first visualization panel provided in the first building and optically connected to an one end of the inter-building optical fiber, a second visualization panel provided in the second building and optically connected to an other end of the inter-building optical fiber, and a monitoring light source provided in the first building to input a monitoring light into the inter-building optical fiber. The first visualization panel includes a first photosensor that partially leaks the monitoring light inputted into the inter-building optical fiber from the monitoring light source and detects an amount of a leaked light. The second visualization panel includes a second photosensor that partially leaks a light from the inter-building optical fiber and detects amount of a leaked light.

Abstract: An optical fiber monitoring system monitors an inter-building optical fiber connecting a first building and a second building. The optical fiber monitoring system includes a first visualization panel provided in the first building and optically connected to an one end of the inter-building optical fiber, a second visualization panel provided in the second building and optically connected to an other end of the inter-building optical fiber, and a monitoring light source provided in the first building to input a monitoring light into the inter-building optical fiber. The first visualization panel includes a first photosensor that partially leaks the monitoring light inputted into the inter-building optical fiber from the monitoring light source and detects an amount of a leaked light. The second visualization panel includes a second photosensor that partially leaks a light from the inter-building optical fiber and detects amount of a leaked light.

Abstract: A duplex LC communication light detecting adapter for forming two parallel optical transmission lines therein when a duplex LC connector is inserted so as to extract as a leak light a portion of communication light transmitting through the optical transmission lines, including an adapter main body that is opaque to light. The adapter main body includes a first space defined by a first wall and isolated from other spaces to arrange a first optical transmission line of the two optical transmission lines, a first light extraction hole for extracting the leak light from the first space, a second space defined by a second wall and isolated from other spaces to arrange a second optical transmission line of the two optical transmission lines, and a second light extraction hole for extracting the leak light from the second space.

Abstract: A duplex LC communication light detecting adapter includes an adapter main body to form two parallel optical transmission lines therein when a duplex LC connector is inserted, the adapter main body including a side in which a light extraction hole is formed, the light extraction hole being located at a vertex of a isosceles triangle having a base that is a line segment connecting centers of the two optical transmission lines in a cross section and opened in a direction perpendicular to the line segment, and a sleeve holder formed integrally with the adapter main body to hold a sleeve that houses a ferrule of the duplex LC connector. The sleeve holder includes an opening section that is opened toward the light extraction hole in a range of more than 30 degrees to less than 120 degrees relative to the line segment in a cross section.

Abstract: A duplex LC communication light detecting adapter includes an adapter main body to form two parallel optical transmission lines therein when a duplex LC connector is inserted, the adapter main body including a side in which a light extraction hole is formed, the light extraction hole being located at a vertex of a isosceles triangle having a base that is a line segment connecting centers of the two optical transmission lines in a cross section and opened in a direction perpendicular to the line segment, and a sleeve holder formed integrally with the adapter main body to hold a sleeve that houses a ferrule of the duplex LC connector. The sleeve holder includes an opening section that is opened toward the light extraction hole in a range of more than 30 degrees to less than 120 degrees relative to the line segment in a cross section.

Abstract: A duplex LC communication light detecting adapter for forming two parallel optical transmission lines therein when a duplex LC connector is inserted so as to extract as a leak light a portion of communication light transmitting through the optical transmission lines, including an adapter main body that is opaque to light. The adapter main body includes a first space defined by a first wall and isolated from other spaces to arrange a first optical transmission line of the two optical transmission lines, a first light extraction hole for extracting the leak light from the first space, a second space defined by a second wall and isolated from other spaces to arrange a second optical transmission line of the two optical transmission lines, and a second light extraction hole for extracting the leak light from the second space.

Abstract: A communication light detecting device interconnecting light transmission paths and collocated therebetween, comprises: an optical coupling body including a core portion for photo coupling with the light transmission paths, and a light extracting portion for extracting a part of the communication light as a leakage light; and a light detecting portion having a light receiving member for receiving the leakage light. The light extracting portion is preferable to possess a lower refractive index than that of the core portion. Besides, the light extracting portion is preferable to include a light detecting use groove with a groove width of 50 ?m or more and 140 ?m or less formed by cutting and separating the core portion. Besides, the light extracting portion is preferable to be the optical coupling body in which outer diameter of the core portion is different from the outer diameter of a core of the light transmission path.

Abstract: An organic semiconductor compound is represented by a general formula 1: wherein A and B each are an aromatic ring with a conjugated electron system and X and Y each are DR2, ER or G in which D denotes any of C, Si, Ge and Sn, E denotes any of N, P, As and Bi, G denotes any of O, S, Se and Te and R denotes any of H, an alkyl group and an aryl group.

Abstract: An optical connector that requires no complicated fabrication operation such as highly accurate optical axis alignment and that permits an efficient pick up of part of the communication signal light being on-propagation along an optical transmission line, is provided.

Abstract: A communication light detecting device interconnecting light transmission paths and collocated therebetween, comprises: an optical coupling body including a core portion for photo coupling with the light transmission paths, and a light extracting portion for extracting a part of the communication light as a leakage light; and a light detecting portion having a light receiving member for receiving the leakage light. The light extracting portion is preferable to possess a lower refractive index than that of the core portion. Besides, the light extracting portion is preferable to include a light detecting use groove with a groove width of 50 ?m or more and 140 ?m or less formed by cutting and separating the core portion. Besides, the light extracting portion is preferable to be the optical coupling body in which outer diameter of the core portion is different from the outer diameter of a core of the light transmission path.

Abstract: An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain electrode formed directly on the gate insulating film, an organic semiconductor layer formed directly on the source electrode and the drain electrode, and a voltage control layer disposed directly between the gate insulating film and the organic semiconductor layer and directly contacting the source electrode and the drain electrode, wherein the voltage control layer gives an ambipolar characteristic to the organic semiconductor layer.

Abstract: The object is to provide a manufacturing method of various elastic rollers whose rubber hardness is remarkably reduced. A hollow cylindrical rubber tube (1) is prepared. Thereafter, a metal shaft (2) is inserted in the rubber tube and the rubber tube is secured to the shaft. Thereafter, a coating layer (1a) on the outer peripheral surface of the rubber tube is removed. The rubber roller is located in a chamber and is subject to one or more pressuring operations and one or more evacuating operations to transform the continuous cell rubber layer into an open cell rubber layer. After that, a fluororesin tube is provided to cover the rubber tube or silicone oil is impregnated in the rubber tube, in accordance with the purpose of use of the rubber roller.

Abstract: An organic semiconductor compound is represented by a general formula 1: wherein A and B each are an aromatic ring with a conjugated electron system and X and Y each are DR2, ER or G in which D denotes any of C, Si, Ge and Sn, E denotes any of N, P, As and Bi, G denotes any of O, S, Se and Te and R denotes any of H, an alkyl group and an aryl group.

Abstract: An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.

Abstract: A template 1 is brought close to or in contact with a surface to be patterned 111 and patterns are formed with liquid 62 on the surface 111. This method comprises the steps of: bringing the template 1 close to or essentially in contact with the surface 111, supplying liquid 62 to a plurality of through holes 12 established in the pattern transfer region 10 of the template 1 for supplying the liquid 62, and separating the template 1 from the surface 111 after the liquid 62 is adhered to the surface 111 via the through holes 12.

Abstract: A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.

Abstract: A shaft protecting portion of a head cover is formed of a knit fabric, having a head inlet/outlet opening at a lower portion thereof. An opening/closing portion, which is open at the head inlet/outlet opening, is formed in a lower portion of the shaft protecting portion. A diameter of the head inlet/outlet opening is increased owing to expansion of the knit fabric when the opening/closing portion is opened by hand, and the diameter of the head inlet/outlet opening is automatically reduced (i.e., restored to the former diameter) when the opening/closing portion is released so that the head cover can be easily put on the head. After the head cover has been put on the head, there is no fear of the head cover being detached from the head even if the opening/closing portion is not locked by a stopper such as a fastener or a planar fastener.

Abstract: A method for manufacturing a semiconductor element in which a characteristic control layer for controlling a threshold voltage of the semiconductor element interposed in between an organic-semiconductor layer facing to a gate electrode across an insulating layer, and the insulating layer, the method comprising: selecting a density of the characteristic control layer depending on a threshold voltage of the semiconductor element; and forming the characteristic control layer of the density selected in the selection step.