Patents by Inventor Takao Nishioka

Takao Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5346869
    Abstract: Described are sintered silicon nitride bodies useful as materials for parts required to have strength, especially excellent impact strength for items such as automobile parts and machine parts. The sintered Si.sub.3 N.sub.4 bodies contain 80-98 wt. % of silicon nitride and have a porosity not higher than 3% and an shock compressive elasticity limit of at least 15 GPa.
    Type: Grant
    Filed: December 29, 1993
    Date of Patent: September 13, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Takehisa Yamamoto, Kenji Matsunuma, Akira Yamakawa, Masaya Miyake
  • Patent number: 5328876
    Abstract: A high-strength silicon nitride sintered body having a flexural strength of 100 kg/mm.sup.2 or higher and a process for producing the same are disclosed, the sintered body comprising not less than 90% by weight of a single crystalline phase of silicon aluminum oxynitride (Si.sub.6-z Al.sub.2 O.sub.z N.sub.8-z, wherein z is a number of from 0 to 4.2) having an average longer diameter of not more than 5 .mu.
    Type: Grant
    Filed: December 23, 1992
    Date of Patent: July 12, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Akira Kuibira, Kenji Matsunuma, Yoshishige Takano, Matsuo Higuchi, Masaaki Honda, Masaya Miyake
  • Patent number: 5297365
    Abstract: An industrially feasible method of grinding silicon nitride ceramics, is disclosed and provides a sufficiently smooth surface. Namely, the surface has a maximum height-roughness Rmax of 0.1 microns or less and a ten-point mean roughness Rz of 0.05 microns. Further, with this method, surface damage can be repaired while grinding. The vertical cutting feed rate of a grinding wheel into a workpiece should be within the range of 0.005-0.1 micron for each rotation of the working surface of the wheel and change linearly or stepwise. The cutting speed of the grinding wheel in a horizontal (rotational) direction should be within the range of 25 to 75 m/sec. With this arrangement, the contact pressure and grinding heat that is generated between the workpiece and the hard abrasive grains during grinding are combined. In other words, mechanical and thermal actions are combined.
    Type: Grant
    Filed: July 29, 1992
    Date of Patent: March 29, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Kenji Matsunuma, Akira Yamakawa
  • Patent number: 5275986
    Abstract: A silicon nitride sintered body comprising .alpha.-silicon nitride including .alpha.'-sialon and .beta.'-sialon including .beta.-silicon nitride in which the content of the .alpha.-silicon nitride including .alpha.'-sialon in the surface part thereof is less than its content in the inner part thereof. The silicon nitride sintered body is excellent in mechanical strength at ordinary temperature, productivity and cost efficiency.
    Type: Grant
    Filed: September 8, 1992
    Date of Patent: January 4, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takehisa Yamamoto, Takao Nishioka, Tomoyuki Awazu, Akira Yamakawa
  • Patent number: 5275772
    Abstract: The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more.
    Type: Grant
    Filed: October 5, 1992
    Date of Patent: January 4, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takehisa Yamamoto, Takao Nishioka, Kenji Matsunuma, Akira Yamakawa, Masaya Miyake
  • Patent number: 5234642
    Abstract: A high-strength silicon nitride sintered body having a flexural strength of 100 kg/mm.sup.2 or higher and a process for producing the same are disclosed, the sintered body comprising not less than 90% by weight of a single crystalline phase of silicon aluminum oxynitride (Si.sub.6-z Al.sub.2 O.sub.z N.sub.8-z, wherein z is a number of from 0 to 4.2) having an average longer diameter of not more than 5 .mu.
    Type: Grant
    Filed: December 29, 1989
    Date of Patent: August 10, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Akira Kuibira, Kenji Matsunuma, Yoshishige Takano, Matsuo Higuchi, Masaaki Honda, Masaya Miyake
  • Patent number: 5225127
    Abstract: There is provided a process for the production of a sintered article which comprises steps ofshaping a raw material powder comprising silicon nitride,thermally treating a shaped article in a non-oxidizing atmosphere at a temperature of 1300.degree. to 1650.degree. C. for at least 2 hours to form .beta.-silicon nitride of not less than 85% calculated from X-ray diffraction patterns and to increase a relative density of the article to not less than 80%, preferably to 80 to 85 %, andsintering the thermally treated article at a temperature of 1700.degree. to 2000.degree. C.
    Type: Grant
    Filed: February 3, 1992
    Date of Patent: July 6, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Yoshishige Takano, Kenji Matsunuma, Matsuo Higuchi, Masaya Miyake
  • Patent number: 5204297
    Abstract: The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 98% or more.
    Type: Grant
    Filed: January 27, 1992
    Date of Patent: April 20, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takehisa Yamamoto, Takao Nishioka, Kenji Matsunuma, Akira Yamakawa, Masaya Miyake
  • Patent number: 5173458
    Abstract: Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage .alpha. crystallization of 93% or more and a mean grain diameter of 0.7 .mu.m or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500.degree. to 1700.degree. C.; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si.sub.3 N.sub.4 (including .beta.
    Type: Grant
    Filed: December 18, 1991
    Date of Patent: December 22, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Kenji Matsunuma, Koichi Sogabe, Tomoyuki Awatsu, Masaya Miyake, Takehisa Yamamoto, Akira Yamakawa
  • Patent number: 5023147
    Abstract: A ceramics-metal joined body which excels in high temperature characteristics and joint strength is formed by metallizing the surface of ceramics such as oxides, carbides, borides, nitrides, and composites thereof, and joining a metallic member through a solder to the metallized surface.
    Type: Grant
    Filed: July 31, 1989
    Date of Patent: June 11, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hirohiko Nakata, Takao Nishioka, Nobuya Oooka, Kenya Motoyoshi
  • Patent number: 4769350
    Abstract: A silicon nitride sintered material for cutting tools comprising from about 3 to 10 wt % of partially stablized zirconium oxide, from about 1 to 5 wt % of aluminum oxide, and from about 1 to 10 wt % of yttrium oxide, the balance being silicon nitride, and the process for making the same.
    Type: Grant
    Filed: September 30, 1987
    Date of Patent: September 6, 1988
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nishioka, Akira Yamakawa, Masaya Miyake
  • Patent number: 4764490
    Abstract: Disclosed is a process for preparation of a sintered silicon nitride. The process comprises the steps of:mixing a powder of silicon nitride with a powder of a sintering agent;compacting the obtained mixture; andsintering the compacted mixture in a non-oxidizing atmosphere.The feature of the process is that the powder of the sintering agent includes a powder mixture of oxide and/or hydroxide of at least two kinds of metals which has been prepared by co-precipitation.Due to the use of the co-precipitated powder as the sintering agent, it is possible to obtain a sintered silicon nitride having an excellent strength and uniformity in quality. The obtained sintered silicon nitride is preferably used as an engineering ceramic.
    Type: Grant
    Filed: April 8, 1986
    Date of Patent: August 16, 1988
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Yamakawa, Masaya Miyake, Takao Nishioka