Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a silicon oxide on the first conductor; a second conductor; a first layer stack on the second conductor. The silicon oxide includes a dopant and has a first part on the first conductor and a second part adjacent to the first part on the first conductor. The second part is higher than the first part. A concentration of the dopant of the second part being higher than a concentration of the dopant of the first part. The second conductor is on the second part of the silicon oxide. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.

Abstract: A magnetoresistive effect element including a substrate; a pinned layer above the substrate; a free layer between the substrate and the pinned layer; a non-magnetic layer between the free layer and the pinned layer; a first layer provided on an opposite side of a side of the non-magnetic layer of the free layer, the first layer being between the substrate and the free layer, the first layer being in direct contact with the free layer, the first layer being non-magnetic and the first layer including a MgFeO layer, the MgFeO layer being an amorphous layer and being in direct contact with the free layer; and a second layer between the first layer and the substrate, the second layer being in contact with the substrate.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a second magnetic layer; a non-magnetic film between the first magnetic layer and the second magnetic layer; a first layer on an opposite side of a side of the non-magnetic layer of the first magnetic layer, the first layer including magnesium oxide as a principal component; and a second layer between the first film and the first magnetic layer, the second layer including a material different from a material of the first layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing nitrogen; a reference layer opposed to the first layer, the reference layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the reference layer being fixed; a storage layer disposed between the first layer and the reference layer, the storage layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the storage layer being changeable, and the storage layer including a second layer containing boron, and a third layer disposed between the second layer and the reference layer and containing boron, a boron concentration of the third layer being lower than a boron concentration of the second layer; and an intermediate layer disposed between the third layer and the reference.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing nitrogen; a reference layer opposed to the first layer, the reference layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the reference layer being fixed; a storage layer disposed between the first layer and the reference layer, the storage layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the storage layer being changeable, and the storage layer including a second layer containing boron, and a third layer disposed between the second layer and the reference layer and containing boron, a boron concentration of the third layer being lower than a boron concentration of the second layer; and an intermediate layer disposed between the third layer and the reference.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (MnxGay)100-zCoz (45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, 0 atm %<z?10 atm %).

Abstract: An encryption processing device includes a memory configured to store a common key, and a processor configured to generate a random number which is an integer, to perform a bit transposition on the common key, the bit transposition being determined at least by the random number, to transmit the random number to another encryption processing device and to receive a response from the other encryption processing device, the response obtained by encryption using a common key stored in the other encryption processing device and a second randomized key generated by performing the bit transposition determined by the random number; and to authenticate the other encryption processing device either by comparing the response with the random number by decrypting the response with the common key, or by comparing the random number with the response by encrypting the random number with the common key.