Abstract: The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15° from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

Abstract: Design and making methods of a neutrons generating target are described. In some embodiments, a surface of a target substrate can be modified to form one or more surface features. In some embodiments, a neutron source layer can be disposed on the surface of the target substrate. In some embodiments, the neutron source layer and the target substrate can be heated to an elevated temperature to form a bond between the two. In some embodiments, the surface modification of the target substrate can reduce blistering and material exfoliation in the target. The target can be used in boron neutron capture therapy.

Abstract: Apparatuses and methods for producing neutrons for applications such as boron neutron capture therapy (BNCT) are described. An apparatus can include a rotary fixture with a coolant inlet and a coolant outlet, and a plurality of neutron-producing segments. Each neutron-producing segment of the plurality of neutron-producing segments is removably coupled to the rotary fixture, and includes a substrate having a coolant channel circuit defined therein and a solid neutron source layer disposed thereon. The coolant channel circuits are in fluid communication with the coolant inlet and the coolant outlet.

Abstract: Apparatuses and methods for producing neutrons for applications such as boron neutron capture therapy (BNCT) are described. An apparatus can include a rotary fixture with a coolant inlet and a coolant outlet, and a plurality of neutron-producing segments. Each neutron-producing segment of the plurality of neutron-producing segments is removably coupled to the rotary fixture, and includes a substrate having a coolant channel circuit defined therein and a solid neutron source layer disposed thereon. The coolant channel circuits are in fluid communication with the coolant inlet and the coolant outlet.

Abstract: The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15° from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

Abstract: Design and making methods of a neutrons generating target are described. In some embodiments, a surface of a target substrate can be modified to form one or more surface features. In some embodiments, a neutron source layer can be disposed on the surface of the target substrate. In some embodiments, the neutron source layer and the target substrate can be heated to an elevated temperature to form a bond between the two. In some embodiments, the surface modification of the target substrate can reduce blistering and material exfoliation in the target. The target can be used in boron neutron capture therapy.

Abstract: Design and making methods of a neutrons generating target are described. In some embodiments, a surface of a target substrate can be modified to form one or more surface features. In some embodiments, a neutron source layer can be disposed on the surface of the target substrate. In some embodiments, the neutron source layer and the target substrate can be heated to an elevated temperature to form a bond between the two. In some embodiments, the surface modification of the target substrate can reduce blistering and material exfoliation in the target. The target can be used in boron neutron capture therapy.

Abstract: Design and making methods of a neutrons generating target are described. In some embodiments, a surface of a target substrate can be modified to form one or more surface features. In some embodiments, a neutron source layer can be disposed on the surface of the target substrate. In some embodiments, the neutron source layer and the target substrate can be heated to an elevated temperature to form a bond between the two. In some embodiments, the surface modification of the target substrate can reduce blistering and material exfoliation in the target. The target can be used in boron neutron capture therapy.

Abstract: A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

Abstract: A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

Abstract: Apparatuses and methods for producing neutrons for applications such as boron neutron capture therapy (BNCT) are described. An apparatus can include a rotary fixture with a coolant inlet and a coolant outlet, and a plurality of neutron-producing segments. Each neutron-producing segment of the plurality of neutron-producing segments is removably coupled to the rotary fixture, and includes a substrate having a coolant channel circuit defined therein and a solid neutron source layer disposed thereon. The coolant channel circuits are in fluid communication with the coolant inlet and the coolant outlet.

Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage.

Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage.

Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Abstract: A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

Abstract: An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.

Abstract: An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.