Abstract: An information processing device includes one or more processors. The one or more processors are configured to optimize, for a specific elementary reaction in a reaction using a catalyst including a plurality of elementary reactions, an arrangement of a promoter element in the catalyst based on activation energy acquired using a trained model, and search for the promoter element based on the activation energy acquired using the trained model for each type of the promoter element.

Abstract: A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.

Abstract: A controller for controlling a drive device that executes drive control of a motor. The controller includes a processing device and a memory having program instructions stored thereon. Execution of the program instructions by the processing device causes the controller to obtain a symbol name provided to indicate data that are an object of reading or updating, to convert the obtained symbol name into an address with reference to a map file, where the map file uses each symbol name included in a source code of a control program as an identifier of the data corresponding to each symbol name, and associates each symbol name with an address of a storage area storing the corresponding data, and to instruct the drive device to read or update the data stored in the storage area indicated by the address obtained through the conversion.

Abstract: A controller for controlling a drive device that executes drive control of a motor. The controller includes a processing device and a memory having program instructions stored thereon. Execution of the program instructions by the processing device causes the controller to obtain a symbol name provided to indicate data that are an object of reading or updating, to convert the obtained symbol name into an address with reference to a map file, where the map file uses each symbol name included in a source code of a control program as an identifier of the data corresponding to each symbol name, and associates each symbol name with an address of a storage area storing the corresponding data, and to instruct the drive device to read or update the data stored in the storage area indicated by the address obtained through the conversion.

Abstract: A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Abstract: A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Abstract: A carbon film deposition apparatus includes an evaporator for evaporating an oxygen-containing hydrocarbon. The carbon film deposition apparatus also includes a gas inlet pipe for introducing the oxygen-containing hydrocarbon gas evaporated in the evaporator. The carbon film deposition apparatus further includes a deposition furnace for depositing a carbon protection film over all surfaces of a wafer by pyrolyzing the oxygen-containing hydrocarbon gas introduced through the gas inlet pipe.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes ion-implanting an impurity in a surface of a silicon carbide wafer, and forming a carbon protection film of a predetermined thickness over all surfaces of the silicon carbide wafer, which has been ion-implanted with the impurity, by a chemical vapor deposition method that deposits a film by pyrolyzing a hydrocarbon gas. The method also includes annealing the silicon carbide wafer after the forming the carbon protection film.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes a step of ion-implanting an impurity in a surface of a silicon carbide wafer (1 and 2); a step of forming a carbon protection film (6) of a predetermined thickness over the entire surface of the silicon carbide wafer (1 and 2) having been ion-implanted with the impurity, by a chemical vapor deposition method that deposits a film by pyrolyzing a hydrocarbon gas; and a step of annealing the silicon carbide wafer (1 and 2) having been formed with the carbon protection film (6). Thereby, the carbon protection film (6) can be formed that contains extremely few contaminants, and prevents step bunching from creating on the surface of the silicon carbide wafer (1 and 2) and crystal defects created therein due to unbalanced thermal stress form increasing.

Abstract: A female contact comprises a tube-shaped socket having a male-contact accommodation space, and a flat spring held in the socket so as to apply elastic force to a male contact. A notch is formed at a male-contact inlet of the socket. A hook formed at one end of the flat spring is engaged with the notch, so that the flat spring is latched at the male-contact inlet.

Abstract: A method of reducing a fluctuation in a cut-off voltage of a cathode for an electron tube in which a metal layer for protrusively deforming a cathode substrate when heated is formed on a surface of the cathode substrate, and an electron emissive material layer is formed on the front face of the cathode substrate directly or through the metal layer and a heater for heating the electron emissive material layer to emit a thermion from a front face of the electron emissive material layer is provided. When the front face of the electron emissive material layer is consumed and retreats, the protrusive deformation of the cathode substrate by the metal layer is induced by a heating operation of the heater so that the front face of the electron emissive material layer is correspondingly deformed protrusively.

Abstract: A female contact comprises a tube-shaped socket having a male-contact accommodation space, and a flat spring held in the socket so as to apply elastic force to a male contact. A notch is formed at a male-contact inlet of the socket. A hook formed at one end of the flat spring is engaged with the notch, so that the flat spring is latched at the male-contact inlet.

Abstract: The object of the present invention is to provide a gas discharge display device having improved luminous efficiency by effectively using ultraviolet ray, which is absorbed in a partition wall or a protective film and the like without contributing to excitation of a fluorescent material. By adding gadolinium to the materials excluding the fluorescent material among structures surrounding the discharge cell, ultraviolet ray having a wavelength of 315 nm is generated, which can excite the fluorescent material. The ultraviolet ray excites the fluorescent material to generate visible light, and then, electric-light conversion efficiency is improved.

Abstract: The object of the present invention is to provide a gas discharge display device having improved luminous efficiency by effectively using ultraviolet ray, which is absorbed in a partition wall or a protective film and the like without contributing to excitation of a fluorescent material. By adding gadolinium to the materials excluding the fluorescent material among structures surrounding the discharge cell, ultraviolet ray having a wavelength of 315 nm is generated, which can excite the fluorescent material. The ultraviolet ray excites the fluorescent material to generate visisble light, and then, electric-light conversion efficiency is improved.

Abstract: A gas sensing element made of a gas sensing material composed of a composite oxide of titanium and niobium as the principal constituent, which is capable of measuring with high sensitivity and selectivity those gases such as hydrogen sulfide, methyl mercaptan, etc. issuing offensive odor, and alcohol, due to variations in electrical resistance of the material.

Abstract: A gas and humidity sensing element in a single integral structure made of a base plate of apatite ceramics, on which a particular metal oxide such as tin oxide, zinc oxide, or composite oxide of titanium and niobium is provided. The sensing element has a function of sensing gas and humidity with outstanding sensitivity to bad smell gas and alcoholic gas, in which the humidity is sensed and measured by variations in electrical resistance of the apatite ceramic base plate and the bad smell gas such as hydrogen sulfide, methyl mercaptan, etc. is sensed and measured by variations in electrical resistance of the metal oxide.

Abstract: A moisture sensitive device is disclosed which comprises a moisture sensitive element including a material comprising a hydroxyapatite, i.e. M.sub.10 (PO.sub.4).sub.6 (OH).sub.2, wherein M is at least one member selected from the group consisting of Sr, Ca and Ba, at least two electrodes formed on the moisture sensitive element, with the electrodes being separated by the element, and electrical leads connected to each of the electrodes.

Abstract: Holographic storage materials are disclosed including lithium niobate in the form of a single crystal added with either from 0.001 to 3.0 molar percent of iridium or from 0.01 to 1.0 molar percent of uranium for the three dimensional holography.