Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.

Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.

Abstract: Disclosed herein are a refractory repairing material for repairing a brick comprising a mixture of 70 to 80 wt % of alumina having not more than 1 mm of grain size, which comprises 25 to 30 wt % of the above amount with a grain size not passing through a 325 mesh and 45 to 50 wt % of the above amount with a grain size passing through a 325 mesh; 1 to 7 wt % of carbonaceous material having a grain size passing through a 60 mesh; 1 to 5 wt % of magnesia having a grain size passing through a 325 mesh; and 10 to 25 wt % of aluminum phosphate, and a method of repairing a plate-like brick.

Abstract: Disclosed herein are a refractory repairing material for repairing a brick comprising a mixture of 70 to 80 wt % of alumina having not more than 1 mm of grain size, which comprises 25 to 30 wt % of the above amount with a grain size not passing through a 325 mesh and 45 to 50 wt % of the above amount with a grain size passing through a 325 mesh; 1 to 7 wt % of carbonaceous material having a grain size passing through a 60 mesh; 1 to 5 wt % of magnesia having a grain size passing through a 325 mesh; and 10 to 25 wt % of aluminum phosphate, and a method of repairing a plate-like brick.