Abstract: An electron-beam cell projection process uses a trial exposure of a test wafer by using cell apertures for use in the cell projection of the target wafer. A design difference and an actual difference between both the areas for exposure are compared against each other to obtain an offset value, which is used for the actual cell projection for correction of a stitching error caused by the projection system.

Abstract: A catalyst which is able to express a high oligomerizing activity of ethylene and a method for the production of &agr;-olefin where ethylene is oligomerized using said catalyst are provided.

Abstract: A catalyst which is able to express a high oligomerizing activity of ethylene and a method for the production of &agr;-olefin where ethylene is oligomerized using said catalyst are provided. The present invention relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-1) a transition metal complex of Groups 4 to 6 of the Periodic Table and also relates to a method for the production of &agr;-olefin by oligomerization of ethylene using said catalyst. The present invention further relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-2) a transition metal complex of Groups 8 to 10 of the Periodic Table and also relates to a method of the production of &agr;-olefin by oligomerization of ethylene using said catalyst.

Abstract: In a charged particle beam drawing data preparing method of preparing drawing pattern data used in a charged particle beam drawing apparatus that forms a micropattern with a charged particle by converting CAD data, it is verified by using interlayer calculation whether a difference exists between the CAD data and the drawing pattern data. When it is verified that a difference exists between the CAD data and the drawing apparatus pattern data, drawing pattern data that compensates for this difference is generated by using interlayer calculation.

Abstract: Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: A data processor compares a length of a pattern to be written into a layer sensitive to a charged particle beam with a critical length equal to the maximum length of a cross section of the charged particle beam or the maximum length of a variable sub-field to see whether or not the pattern is written through a radiation of the maximized cross section or through a radiation onto the maximized sub-field, and a main deflector and a sub-deflector guide a shot of charged particle beam to the layer if the answer is positive so that the pattern is prevented from deformation due to a low stitching accuracy.

Abstract: The present invention consists in a method of creating an EB mask for electron beam image drawing, comprising: a step of extracting patterns for forming on an EB mask from design data stored in means for storage; a step of calculating an aperture area of an aperture section requested in an EB mask, using the design data contained in the extracted cell; a step of generating cell data for aperture creation using the value of this aperture area; and a step of forming a basic aperture pattern in an EB mask using this cell data for aperture creation.

Abstract: An electron beam exposure mask comprises a mask body and a plurality of unit patterns each having an opening pattern iteratively formed in the mask. The mask body has a thickness profile controlled based on the opening density of the pattern in the mask area.

Abstract: Each of two pattern scheduled areas to be formed a pattern is divided into two areas of an outer edge section and a central section surrounded by the outer edge section. Further, the outer edge section which is in contact with a space area is divided into outline portions from both end portion of the outer edge section, with a 5 .mu.m distance. An outline portion is formed at a portion of the outer edge section sandwiched by the outline portions. An outline portion is formed at a position of the outer edge section orthogonal with these outline portions. Next, a suitable exposure level to each of the divided outline portions is controlled by a controlling unit based on the intensity of electron beams.

Abstract: A method of compensation to an electron beam dose for exposing an electron beam through an electron dose mask to an object is provided, which comprises the steps of measuring an actual opening area of the electron dose mask, and setting an optimum dose to the electron beam dose system with reference to the measured actual opening area of the electron dose mask, thereby forming on a wafer a pattern exactly corresponding to the designed pattern even if the electron beam mask has an opening pattern differing in size from the designed pattern.

Abstract: Disclosed herein is a method of electron beam cell projection lithography, employing an electron beam which is shaped by a first aperture having a first opening and a second aperture having a plurality of second openings. The shaped electron beam is irradiated on a sample surface to expose plurality of patterns on the sample surface, wherein an exposure dose is determined according to an exposure intensity distribution function, thereby correcting a proximity effect, while the exposure dose is also controlled to correct for a beam blur induced by a Coulomb interaction effect. The exposure intensity distribution function includes a term for correcting the Coulomb interaction effect.

Abstract: In an electron beam exposure system, an electron beam is adjusted and is irradiated onto a number of pattern openings of a mask. The electron beam passed through the number of the pattern openings is deflected by deflection units and is irradiated onto a resist-coated target. The target is divided into a plurality of sub areas whose size corresponds to the size of the pattern openings. Exposure times are calculated for the sub areas so that energy deposited in the resist of the target is brought close to a definite energy.

Abstract: A process of producing an .alpha.-olefin which comprises carrying out separately the growth of ethylene with triethyl aluminum and the growth of ethylene with tributyl aluminum, displacing the resulting higher trialkyl aluminum with ethylene, thereby forming triethyl aluminum and an .alpha.-olefin, and displacing at least part of the resulting triethyl aluminum with butene contained in the resulting .alpha.-olefin, thereby forming tributyl aluminum.The present invention permits the efficient production of .alpha.-olefins containing linear .alpha.-olefins in extremely high purity. The .alpha.-olefins will find use as comonomers for polyolefins (whose demand is increasing recently) and also as raw materials of synthetic lubricants.

Abstract: Disclosed herein is a process for producing a linear .alpha.-olefin by the oligomerization of ethylene, characterized in that the oligomerization is carried out in the presence of a catalyst composed of (A) titanium halide or zirconium halide, (B) an organoaluminum compound, and (C) an alcohol (methanol and/or ethanol). The linear .alpha.-olefin has an extremely high purity because it is not contaminated with the catalyst components.

Abstract: In a method for the production of linear .alpha.-olefins by the oligomerization of ethylene in the presence of a catalyst system composed of (A) zirconium tetrachloride, (B-a) ethyl aluminum sesquichloride and (B-b) triethyl aluminum, an improvement is proposed which comprises using the catalyst system prepared in a specific procedure in which one of the essential conditions is the order of successive introduction of the three components along with the concentration of zirconium tetrachloride, temperature and length of time. It is essential that introduction of the component (B-b) is not preceded by the contacting of the components (A) and (B-a). Accoridng to the invention, the reaction product contains the species of the linear .alpha.-olefin compounds having higher usefulness than other species in a greatly increased yield.