Abstract: Disclosed is a CCD device in which a charge transfer register of a CCD structure is connected to a charge detector via an output gate and has a reset gate between the charge detector and a reset drain, and an output gate pulse opposite in phase from a reset pulse applied to the reset gate is applied to the output gate. A dummy charge detector and an amplitude adjusting circuit are provided. On the basis of detection of the potential of a diffusion layer in the dummy charge detector, the amplitude adjusting circuit controls the amplitude of the output gate pulse applied to the output gate.

Abstract: Disclosed is a CCD device in which a charge transfer register of a CCD structure is connected to a charge detector via an output gate and has a reset gate between the charge detector and a reset drain, and an output gate pulse opposite in phase from a reset pulse applied to the reset gate is applied to the output gate. A dummy charge detector and an amplitude adjusting circuit are provided. On the basis of detection of the potential of a diffusion layer in the dummy charge detector, the amplitude adjusting circuit controls the amplitude of the output gate pulse applied to the output gate.

Abstract: A solid-state imaging apparatus includes a plurality of photoelectric conversion devices, a charge transfer device for transferring a signal charge converted by the photoelectric conversion devices, a signal charge detection portion for converting a signal charge transferred by the charge transfer device into a signal voltage, a reset circuit for resetting a potential of the signal charge detection portion, and an amplification portion for amplifying the signal voltage. The amplification portion includes a two-stage source follower, each supplied with power supply voltages different from the power supply voltage to be supplied to the reset circuit. The second stage source follower includes drive transistor, and a current source that changes a current amount according to a fluctuation of the reset potential VRD.

Abstract: A linear image sensor, comprises a first and second gate/shutter arrays in which a plurality of the read gates and of the shutter structure sections are alternately disposed, a light-receiving element array which is disposed between the first and second gate/shutter arrays and in which a plurality of the light-receiving elements are arranged in line, a first charge transfer section which transfers a signal charge which is read out through the read gate of the first gate/shutter array, and a second charge transfer section which transfers a signal charge which is read out through the read gate of the second gate/shutter array.

Abstract: In a linear image sensor, a shutter structure includes: a shutter gate electrode provided between photodiode arrays; and a shutter drain provided below the shutter gate electrode. With this construction, a layout area is reduced and the number of scanning operations performed in the auxiliary scanning direction necessary to obtain image data for one line is reduced. As a result, the capacity of a memory used is reduced and the influence of color drift is suppressed.

Abstract: A solid-state imaging apparatus includes a plurality of photoelectric conversion devices, a charge transfer device for transferring a signal charge converted by the photoelectric conversion devices, a signal charge detection portion for converting a signal charge transferred by the charge transfer device into a signal voltage, a reset circuit for resetting a potential of the signal charge detection portion, and an amplification portion for amplifying the signal voltage. The amplification portion includes a two-stage source follower, each supplied with power supply voltages different from the power supply voltage to be supplied to the reset circuit. The second stage source follower includes drive transistor, and a current source that changes a current amount according to a fluctuation of the reset potential VRD.

Abstract: A linear image sensor, comprises a first and second gate/shutter arrays in which a plurality of the read gates and of the shutter structure sections are alternately disposed, a light-receiving element array which is disposed between the first and second gate/shutter arrays and in which a plurality of the light-receiving elements are arranged in line, a first charge transfer section which transfers a signal charge which is read out through the read gate of the first gate/shutter array, and a second charge transfer section which transfers a signal charge which is read out through the read gate of the second gate/shutter array.

Abstract: In a linear image sensor, a shutter structure includes: a shutter gate electrode provided between photodiode arrays; and a shutter drain provided below the shutter gate electrode. With this construction, a layout area is reduced and the number of scanning operations performed in the auxiliary scanning direction necessary to obtain image data for one line is reduced. As a result, the capacity of a memory used is reduced and the influence of color drift is suppressed.