Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.

Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.

Abstract: Several embodiments of prime mover driven electrical generators wherein the power output is increased without increasing the driving speed by driving both of the generator elements in opposite directions.

Abstract: Disclosed is a nickel layer formed on a substrate by sputtering, in which nickel layer a percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. This nickel layer has a reduced stress, and therefore, lessens a bending of a substrate. The nickel layer is formed by a process for sputtering nickel on a substrate, comprising supplying an argon gas into a vacuum chamber, adjusting a pressure of the argon gas in the vacuum chamber to a predetermined value, ionizing the argon gas, bombarding a target containing nickel with the ionized argon gas, to sputter nickel atoms, and depositing the sputtered nickel atoms onto the substrate, wherein the predetermined pressure of the argon gas is not lower than 12 mTorr.

Abstract: A fluxless soldering process for soldering a pressure sensor unit having a sensor chip incorporating a semiconductor circuit of a large scale integration, for example, to a metal stem without scratching the surface of the chip. For the soldering, a nickel layer and an oxidation-preventing layer are formed on the surface of the glass substrate of the sensor unit. The oxidation-preventing layer acts to prevent the nickel layer from oxidizing. The substrate undergoes a thermal hysteresis before soldering. The thickness of the oxidation-preventing layer is so set that after the thermal hysteresis, movement of nickel atoms of the nickel layer to the top surface of the substrate is suppressed in relation to the thermal hysteresis. The substrate and the stem are heated in a reducing atmosphere to melt a solder foil placed between the substrate and the stem. Thus, the sensor unit is soldered to the stem. The solder-wettability of the soldered surface of the substrate is not deteriorated.

Abstract: On a rear surface of a semiconductor (10), a contact layer (11), a diffusion preventing layer (12) and a solder joint layer (13) are formed, and this solder joint layer (13) is connected to a mount base (15) by a Pb-Sn solder layer (14). The contact layer (11) is formed of a rare earth metal, its silicide or a composite thereof, the diffusion preventing layer (12) is formed of a ferrous metal, and the solder joint layer (13) is formed of a Ni-Au alloy. By forming the diffusion preventing layer (12) using the ferrous metal, a diffusion of tin in a solder is prevented and by the solder joint layer (13) of the Ni-Au alloy, an excellent solder joint property can be maintained to reduce the number of laminated layers. Further, as a surface treated layer of at least one joint member, the Ni-Au alloy is used and by heating the semiconductor substrate via a solder foil in a reducing atmosphere a high airtightness is obtained.

Abstract: A method for forming electrodes with strong adhesion strength for a semiconductor device is provided. The adhesion strength between a Si substrate and a Ti film is made higher than the pulling stress of a Ni film. Before an electrode is formed using sputtering process, the natural oxide film grown on a semiconductor substrate is removed using an Ar reverse sputtering while the top surface of the silicon substrate is converted to an amorphous through a bombardment and introduction of Ar. While Ti is deposited, a Si-Ti amorphous layer is formed in the Si/Ti interface. In this case, the amount of Ar atoms is controlled less than 4.0.times.10.sup.14 atoms/cm.sup.2. The Ar amount also can be controlled by adjusting the conditions such as the output or cathodic voltage of Ar reverse sputtering and decreasing the absolute value of Ar in the amorphous Si layer. Also the Ar amount can be controlled by diffusing Ar atoms into the substrate at more than about 300.degree. C.

Abstract: The features of the present invention are 1) to apply metallization on the bonding surface of a piezoelectric ceramic with a metal likely to react with the piezoelectric ceramic material, 2) when the piezoelectric ceramic material is soldered on the bonding surface, to apply metallization with a metal likely to react with the solder material, 3) to provide between the metallizing layers formed in 1) and 2) a metallizing layer including metal which prevents reaction between the metals and their diffusion, 4) to use a mounting member for the piezoelectric ceramic which has substantially the same thermal expansion coefficient as the piezoelectric ceramic in non-polarization condition and 5) to solder in the non-polarization condition and thereafter to polarize.

Abstract: A fluxless soldering process comprising the steps of: preparing first and second members to be bonded by soldering, the first member having a bonding surface with a higher solder-wettability and the second member having a bonding surface with a lower solder-wettability; placing the second member with the bonding surface thereof facing upward, a solder foil on the bonding surface of the second member, and the first member on the solder foil and with the bonding surface thereof facing downward, to form an assembly; heating the assembly in a reducing atmosphere to fuse the solder foil, thereby forming a molten solder between the first and second members; and cooling the assembly to solidify the molten solder, thereby bonding the first and second members.

Abstract: Disclosed is a rotating machinery diagnosis system with an AE technique, which comprises: an AE sensor mounted on a rotary machine for sensing an acoustic signal of the rotary machine; envelope detector means for obtaining an envelope signal from the acoustic signal from the AE sensor; waveform-feature processor means for performing signal processing so as to detect a feature of waveform of an output waveform signal from the envelope detector means; feature decision means for judging whether the feature of waveform belongs to a continuous type or a burst type and/or to a rotation-synchronous type or a rotation-asynchronous type on the basis of an output signal from the waveform-feature processor means; and diagnostic output means for outputting and displaying an output signal from the feature decision means, whereby it is possible to perform judgement simultaneously as to a plurality of kinds of abnormality.

Abstract: A tablet type coordinate input apparatus comprises a flat medium for propagating a longitudinal elastic wave, longitudinal elastic wave detecting elements disposed on part of the end-adjacent side surfaces or of the front surface of the flat medium, a longitudinal elastic wave input member having an end portion terminating in a sharp-pointed end and brought into pressure engagement at that end with any desired position on the surface of the flat medium to radiate the longitudinal elastic wave from that end, an amplifier circuit amplifying electrical signals indicative of the elastic wave detected by the detecting elements, a comparator circuit comparing the signals amplified by the amplifier circuit with a predetermined threshold voltage thereby generating delay pulse signals corresponding to the propagation times of the longitudinal elastic wave, a counter circuit counting the lengths of time elapsed from the time of radiation of the longitudinal elastic wave toward the flat medium as a result of pressure en

Abstract: A corrosion resisting copper alloy, especially suitable for use in fabricating heat exchangers, comprises 25 to 38% by weight zinc, 0.005 to 0.04% by weight phosphorus, the remainder of the alloy being copper, the alloy having a recrystallized grain size within the range of 2.mu. to 10.mu..

Abstract: A method and apparatus for detecting metal wipe damages of plane bearings with the metal wipe generating an ultrasonic signal as an acoustic emission signal when it occurs. The ultrasonic signal has a periodic appearance therefore, the metal wipe damages, can be detected by monitoring the periodic nature of the ultrasonic signal. The ultrasonic signal is received by a transducer fixed to the plane bearing with the periodic nature of the received ultrasonic signal being computed by a processing unit so as to provide a output signal of the occurrence of a metal wipe when the received ultrasonic signal is periodic.

Abstract: A method and apparatus for detecting the occurrence of rubbing in a rotary machine, in which at least one acoustic sensor is mounted on at least the rotor part or the stator part of the rotary machine, and the output signal from the acoustic sensor is detected and then filtered to extract a frequency component having a frequency substantially equal to the rotational frequency of the rotary machine, so as to detect the occurrence of rubbing in the rotary machine as early as possible and also to locate the source of the rubbing. Even when the occurrence of abnormal metal-to-metal contact at a bearing of the rotary machine is detected, it is discriminated from rubbing so that the occurrence of the rubbing can be reliably detected.

Abstract: Temperature-rise detecting device and average beam current restricting device operable in response to the former device are provided in television receiver set. Temperature in the television receiver may be kept below a predetermined temperature by reducing the average beam current when the temperature in the television receiver set rises. This results in the lowering of the maximum rated temperature for the parts used in the fly-back transformer, the high voltage rectifier, etc.