Patents by Inventor Takao Yoshihara
Takao Yoshihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9091925Abstract: The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate to form a film. There can be provided a method for forming a silicon-containing resist underlayer film capable of reducing coating defects after forming a film by cleaning and removing a precipitate derived from silicon-containing resist underlayer film composition that precipitates and adheres in a pipe of an apparatus for coating and forming a film.Type: GrantFiled: May 16, 2013Date of Patent: July 28, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takao Yoshihara, Tsutomu Ogihara, Motoaki Iwabuchi
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Patent number: 8945809Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.Type: GrantFiled: November 23, 2010Date of Patent: February 3, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Koji Hasegawa, Masayoshi Sagehashi, Taku Morisawa, Yuji Harada, Takao Yoshihara
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Patent number: 8741548Abstract: A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.Type: GrantFiled: August 19, 2008Date of Patent: June 3, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Katsuya Takemura, Yoshio Kawai
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Publication number: 20130337168Abstract: The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate to form a film. There can be provided a method for forming a silicon-containing resist underlayer film capable of reducing coating defects after forming a film by cleaning and removing a precipitate derived from silicon-containing resist underlayer film composition that precipitates and adheres in a pipe of an apparatus for coating and forming a film.Type: ApplicationFiled: May 16, 2013Publication date: December 19, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takao YOSHIHARA, Tsutomu OGIHARA, Motoaki IWABUCHI
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Patent number: 8192921Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.Type: GrantFiled: January 13, 2010Date of Patent: June 5, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Kazuhiro Katayama
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Patent number: 8105764Abstract: A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.Type: GrantFiled: September 23, 2008Date of Patent: January 31, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Toshinobu Ishihara
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Publication number: 20110151381Abstract: A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.Type: ApplicationFiled: November 23, 2010Publication date: June 23, 2011Inventors: Koji HASEGAWA, Masayoshi Sagehashi, Taku Morisawa, Yuji Harada, Takao Yoshihara
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Patent number: 7771914Abstract: A resist composition comprises a polymer comprising recurring units having formula (1) wherein R1, R4, R7, and R14 are H or methyl, R2, R3, R15, and R16 are H, alkyl or fluoroalkyl, R is F or H, R5 is alkylene, R6 is fluorinated alkyl, R8 is a single bond or alkylene, R10 and R11 are H, F, methyl or trifluoromethyl, R12 and R13 are a single bond, —O— or —CR18R19—, R9, R18, and R19 are H, F, methyl or trifluoromethyl, R17 is alkylene, X1, X2 and X3 are —C(?O)—O—, —O—, or —C(?O)—R20—C(?O)—O— wherein R20 is alkylene, 0?(a-1)<1, 0?(a-2)<1, 0?(a-3)<1, 0<(a-1)+(a-2)+(a-3)<1, 0<b<1, and 0<(a-1)+(a-2)+(a-3)+b?1.Type: GrantFiled: October 16, 2007Date of Patent: August 10, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Yuji Harada, Wataru Kusaki
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Publication number: 20100178618Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takao Yoshihara, Kazuhiro Katayama
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Patent number: 7741015Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.Type: GrantFiled: February 12, 2008Date of Patent: June 22, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Takeshi Kinsho, Koji Hasegawa, Yoshio Kawai, Katsuya Takemura
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Patent number: 7666571Abstract: A polymer of which dissolution rate in an alkaline developer increases under the action of acid comprises recurring units having formulae (1) and (2) wherein R1, R2, and R4 are H or methyl, R3 is difluoromethyl or trifluoromethyl, and X is tertiary alkyl. A resist composition comprising the polymer has a high sensitivity and resolution, decreased pattern collapse during development, and minimized MEF and is best suited as micropatterning material for the VLSI manufacture.Type: GrantFiled: October 30, 2006Date of Patent: February 23, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takeru Watanabe, Seiichiro Tachibana, Takao Yoshihara
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Patent number: 7537880Abstract: To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.Type: GrantFiled: October 3, 2007Date of Patent: May 26, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Takao Yoshihara, Wataru Kusaki, Tomohiro Kobayashi, Koji Hasegawa
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Patent number: 7514204Abstract: A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.Type: GrantFiled: October 23, 2007Date of Patent: April 7, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Wataru Kusaki, Yuji Harada, Takao Yoshihara
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Publication number: 20090081595Abstract: A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.Type: ApplicationFiled: September 23, 2008Publication date: March 26, 2009Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Toshinobu ISHIHARA
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Publication number: 20090053651Abstract: A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.Type: ApplicationFiled: August 19, 2008Publication date: February 26, 2009Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Katsuya TAKEMURA, Yoshio KAWAI
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Publication number: 20080199806Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.Type: ApplicationFiled: February 12, 2008Publication date: August 21, 2008Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Takeshi KINSHO, Koji HASEGAWA, Yoshio KAWAI, Katsuya TAKEMURA
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Publication number: 20080118860Abstract: To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.Type: ApplicationFiled: October 3, 2007Publication date: May 22, 2008Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Yuji Harada, Jun Hatakeyama, Takao Yoshihara, Wataru Kusaki, Tomohiro Kobayashi, Koji Hasegawa
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Publication number: 20080096131Abstract: A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.Type: ApplicationFiled: October 23, 2007Publication date: April 24, 2008Inventors: Jun Hatakeyama, Wataru Kusaki, Yuji Harada, Takao Yoshihara
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Publication number: 20080090172Abstract: A resist composition comprises a polymer comprising recurring units having formula (1) wherein R1, R4, R7, and R14 are H or methyl, R2, R3, R15, and R16 are H, alkyl or fluoroalkyl, R is F or H, R5 is alkylene, R6 is fluorinated alkyl, R8 is a single bond or alkylene, R10 and R11 are H, F, methyl or trifluoromethyl, R12 and R13 are a single bond, —O— or —CR18R19—, R9, R18, and R19 are H, F, methyl or trifluoromethyl, R17 is alkylene, X1, X2 and X3 are —C(?O)—O—, —O—, or —C(?O)—R20—C(?O)—O— wherein R20 is alkylene, 0?(a-1)<1, 0?(a-2)<1, 0?(a-3)<1, 0<(a-1)+(a-2)+(a-3)<1, 0<b<1, and 0<(a-1)+(a-2)+(a-3)+b?1.Type: ApplicationFiled: October 16, 2007Publication date: April 17, 2008Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Takao YOSHIHARA, Yuji HARADA, Wataru KUSAKI
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Publication number: 20070099114Abstract: A polymer of which dissolution rate in an alkaline developer increases under the action of acid comprises recurring units having formulae (1) and (2) wherein R1, R2, and R4 are H or methyl, R3 is difluoromethyl or trifluoromethyl, and X is tertiary alkyl. A resist composition comprising the polymer has a high sensitivity and resolution, decreased pattern collapse during development, and minimized MEF and is best suited as micropatterning material for the VLSI manufacture.Type: ApplicationFiled: October 30, 2006Publication date: May 3, 2007Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Seiichiro Tachibana, Takao Yoshihara