Abstract: A manufacturing method for semiconductor devices includes the steps of forming an Ni/Au film that includes an Ni film and an Au film formed over the Ni film over a wiring that is coupled to each of a plurality of electrode pads formed over a principal surface of a semiconductor wafer and arranges each of the electrode pads at a different position, grinding a back surface of the semiconductor wafer, performing reduction treatment on a surface of the Ni/Au film, and forming a solder bump over the Ni/Au film. In the reduction treatment, respective processes of flux application, reflow soldering and cleaning are performed and the solder bump is bonded to the Ni/Au film after the reduction treatment has been completed. Thereby, bonding reliability in flip chip bonding of a semiconductor device is improved.

Abstract: A manufacturing method for semiconductor devices includes the steps of forming an Ni/Au film that includes an Ni film and an Au film formed over the Ni film over a wiring that is coupled to each of a plurality of electrode pads formed over a principal surface of a semiconductor wafer and arranges each of the electrode pads at a different position, grinding a back surface of the semiconductor wafer, performing reduction treatment on a surface of the Ni/Au film, and forming a solder bump over the Ni/Au film. In the reduction treatment, respective processes of flux application, reflow soldering and cleaning are performed and the solder bump is bonded to the Ni/Au film after the reduction treatment has been completed. Thereby, bonding reliability in flip chip bonding of a semiconductor device is improved.

Abstract: A manufacturing method for semiconductor devices includes the steps of forming an Ni/Au film that includes an Ni film and an Au film formed over the Ni film over a wiring that is coupled to each of a plurality of electrode pads formed over a principal surface of a semiconductor wafer and arranges each of the electrode pads at a different position, grinding a back surface of the semiconductor wafer, performing reduction treatment on a surface of the Ni/Au film, and forming a solder bump over the Ni/Au film. In the reduction treatment, respective processes of flux application, reflow soldering and cleaning are performed and the solder bump is bonded to the Ni/Au film after the reduction treatment has been completed. Thereby, bonding reliability in flip chip bonding of a semiconductor device is improved.

Abstract: The reliability and production yield of a solid state image sensing device is improved. Over a surface of a wiring substrate, a sensor chip and a lens-barrel having the sensor chip housed therein are mounted. To the lens-barrel, a lens holder for retaining a lens is connected. Over a back surface of the wiring substrate, a logic chip, a memory chip and a passive part are mounted, and they are sealed with a sealing resin. The lens-barrel and lens holder are each threaded. They are thermally welded while the threads are fitted to each other. The passive part is bonded to the wiring substrate via a Sn—Ag type Pb-free solder. After the wiring substrate is subjected to plasma washing treatment, the sensor chip is mounted over the wiring substrate and an electrode pad of the sensor chip and an electrode of the wiring substrate are electrically connected via a bonding wire.