Abstract: Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 ?cm and, when the peak strength in a wave number range of 760-780 cm?1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm?1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.

Abstract: Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 ?cm and, when the diffraction peak strength in a diffraction angle 2? range of 33-34° in an X-ray diffraction pattern is regarded as “A” and the diffraction peak strength of the SiC(111) plane in the X-ray diffraction pattern is regarded as “B”, then the ratio (A/B) is not more than 0.018.

Abstract: A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ?·cm and 100,000 ?·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.

Abstract: A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ?·cm and 100,000 ?·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.

Abstract: A nitrogen-doped n-type SiC-formed material consisting of high purity ?-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10?3 to 10?5 ?m.

Abstract: A nitrogen-doped n-type SiC-formed material consisting of high purity &bgr;-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10−3 to 10−5 &OHgr;m.

Abstract: The present invention discloses a process for producing a boron nitride-coated SiC whisker, comprising dissolving a borazine represented by the following formula (I) in hexane, dispersing a SiC whisker in the resultant solution, collecting the SiC whisker thus treated by filtration, drying and baking it in a non-oxidizing atmosphere at 1000.degree. to 1800.degree. C. to form a boron nitride coating on the surface of the SiC whisker: ##STR1## wherein R is an atom or a group selected from the group consisting of Cl, N(C.sub.2 H.sub.5).sub.2, NH.sub.2, NHCH.sub.3 and CH.sub.3, and R' is an atom or a group selected from the group consisting of H and CH.sub.3.