Abstract: A neutral-point terminal device for use with a neutral point side bundle of wires in a polyphase winding of a dynamoelectric machine includes a metal sleeve and an insulating cap covering the metal sleeve. The metal sleeve is covered by the insulating cap so that distal ends of the bundled neutral point side wires remain in an interior of the metal sleeve. The metal sleeve is then pressurized thereby to be deformed so as to be secured to the distal ends of the bundled wires.

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference, the rotor core being divided into a plurality of blocks, the core materials constituting one of at least three blocks having the magnetic concave and convex portions shifted by a predetermined angle in one of a rotating direction of the rotor and a direction opposite the rotating direction of the rotor relative to a center line passing the key, the core materials constituting each one of the blocks located at both ends of the one block having the magnetic concave and convex portions shifted by a predetermined angle in the other of the rotating direction of the rotor and the direction opposite the rotating direction of the rotor relative to a center line passing the key, and a ro

Abstract: A rotor for a reluctance type rotating machine includes a rotor core formed by stacking a number of annular core materials each of which includes magnetic concave and convex portions alternately formed on an outer circumference thereof and a central through hole, the rotor core having a key axially extending on an outer circumference thereof, the rotor core being divided into a plurality of blocks, the core materials constituting at least one block having the magnetic concave and convex portions shifted by a predetermined angle relative to the core materials constituting the other or another block on the basis of a center line passing the key, and a rotational shaft inserted through the central hole of the rotor core, the shaft having a key groove engaging the key of the rotor core.

Abstract: The Inventor invented a combustion control device which optimizes combustion regardless of the cetane number of a fuel of an internal combustion engine (1) by focusing on the correlation between the cetane number and specific gravity of the fuel, and correcting combustion control based on the specific gravity of the fuel. The combustion control device comprises a sensor (7, 32, 36, 37) which detects the specific gravity of the fuel, a device which adjusts a combustion-related element of the internal combustion engine (1) such as fuel injection, compression end in-cylinder temperature and an intake air swirl (15, 19, 27, 51), and a controller (21) programmed to correct a target value of the element based on the specific gravity of the fuel (S414, S424, S430), and control the adjusting device so that the corrected target value is realized (S415, S425, S430).

Abstract: Permanent magnets are arranged to be supported by the provision of permanent magnet position-locating projections (12) in permanent magnet embedding holes (5). By optimizing the shape of thin-wall regions (18) and (19) within rotor core (4), leakage of flux generated from the permanent magnets is reduced and the strength of the thin-wall regions where stress is concentrated is ensured.

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: An electronic device such as a semiconductor device, a method of manufacturing the same, and an apparatus for manufacturing the same, wherein by placing a ceramic substrate provided with a metallic thin film integrated into at least one selected from an upper surface and a lower surface of the ceramic substrate in its peripheral portion so as to extend both inside and outside a cavity of a mold for transfer molding, and positioning the metallic thin film in a position with which an upper mold and a lower mold of the mold come into contact, occurrence of cracks or breakage in the ceramic substrate is prevented by buffering the pressure applied to the ceramic substrate so as to prevent a distortion force from being caused even when the ceramic substrate is sandwiched and compressed between the upper mold and the lower mold.

Abstract: Permanent magnets are arranged to be supported by the provision of permanent magnet position-locating projections (12) in permanent magnet embedding holes (5). By optimizing the shape of thin-wall regions (18) and (19) within rotor core (4), leakage of flux generated from the permanent magnets is reduced and the strength of the thin-wall regions where stress is concentrated is ensured.

Abstract: An electronic device such as a semiconductor device, a method of manufacturing the same, and an apparatus for manufacturing the same, wherein by placing a ceramic substrate provided with a metallic thin film integrated into at least one selected from an upper surface and a lower surface of the ceramic substrate in its peripheral portion so as to extend both inside and outside a cavity of a mold for transfer molding, and positioning the metallic thin film in a position with which an upper mold and a lower mold of the mold come into contact, occurrence of cracks or breakage in the ceramic substrate is prevented by buffering the pressure applied to the ceramic substrate so as to prevent a distortion force from being caused even when the ceramic substrate is sandwiched and compressed between the upper mold and the lower mold.

Abstract: An electronic device such as a semiconductor device, a method of manufacturing the same, and an apparatus for manufacturing the same, wherein by placing a ceramic substrate provided with a metallic thin film integrated into at least one selected from an upper surface and a lower surface of the ceramic substrate in its peripheral portion so as to extend both inside and outside a cavity of a mold for transfer molding, and positioning the metallic thin film in a position with which an upper mold and a lower mold of the mold come into contact, occurrence of cracks or breakage in the ceramic substrate is prevented by buffering the pressure applied to the ceramic substrate so as to prevent a distortion force from being caused even when the ceramic substrate is sandwiched and compressed between the upper mold and the lower mold.

Abstract: In order to control the direction of a beam antenna, at least one magnetic sensor is attached to the antenna for measuring at least one of the horizontal and vertical components of the geomagnetic field. A magnetic sensor circuit converts the output of the magnetic sensor into an electric signal which varies corresponding to changes in the measured geomagnetic field according to the direction of the antenna. A processor determines the current direction of the antenna based on an output of the magnetic sensor circuit and outputs a control signal for setting the antenna in a desired direction. A motor rotates the antenna, and a power source drives the motor. A control unit receptive of a motor control signal output by the processor controls the rotation of the antenna.

Abstract: A control signal generating circuit in a synchronous semiconductor memory device outputs timing signals for controlling activation of a word line and activation of sense amplifier, by delaying an external control signal by prescribed time periods. A bank control signal generating circuit provided for each bank holds activation of the timing signal from the control signal generating circuit, and outputs a signal for controlling timing of activation of the word line and timing of activation of the sense amplifier of the corresponding bank.

Abstract: A method of manufacturing a semiconductor integrated circuit device includes the steps of constructing a plurality of lead frames having leads which each include an inner portion and an outer portion and electrically connecting a semiconductor chip to the inner portions of the leads of each frame. The lead frames are then stacked one above each other to form a vertical stack and plates are then inserted between each of the lead frames with each plate having an opening in the center whereby a central cavity is formed in the stack. The stack is then placed between a top mold member and a bottom mold member and a resin is injected into the central cavity whereupon the resin is cured to form a single resin package encapsulating the semiconductor chips. The resin package is then released from the mold members.

Abstract: A first clock signal for controlling the inputting of an external signal and for controlling internal operation and a second clock signal for controlling data output are applied to separate clock input nodes, respectively. Data output timing with respect to the first clock signal can be adjusted and thus clock access time and data hold time can be adjusted. Internal data read path is pipelined to include a first transfer gate responsive to the first clock signal for transferring internal read data and a second transfer gate responsive to the second clock signal for transferring the internal read data from the first transfer gate for external outputting through an output buffer. A synchronous semiconductor memory device is provided capable of setting clock access time and data hold time at the optimal values depending on the application and of reducing the clock access time.

Abstract: A synchronous semiconductor memory device is provided with a delay circuit between an input latch circuit and a pad. The synchronous semiconductor memory device can operate at a higher speed since respective external input signals supplied to a plurality of pads are delayed such that the time required for transmission from respective pads to the input latch circuit is equal, and that skew is eliminated.

Abstract: Switches (11, 12) select either of refresh address counters (6a, 6b) in accordance with a refresh bank set signal (.phi.REFADD) when a bank refresh signal (.phi.BANKREF) is activated. An internal bank address (int.BA) serves as the refresh bank set signal (.phi.REFADD) to control the switch (12) and the refresh address counter (6a or 6b) designated by the internal bank address (int.BA) performs a count operation in synchronization with a refresh clock (.phi.REFCLK). The switch (11) outputs either of refresh addresses (Ref.Add.sub.-- A<0:10>, Ref.Add.sub.-- B<0:10>) which is updated. With this configuration provided is an SDRAM which allows access to data during a refresh operation.

Abstract: In order to determine the direction of a beam antenna, at least one magnetic detection device is attached to the beam antenna for measuring at least one of the horizontal and vertical components of the geomagnetic field. Maximum and minimum geomagnetic field data values are obtained from the magnetic detection devices while rotating the beam antenna. Based on output data from the at least one magnetic detection means, one or two possible direction candidates are determined. When the output data has only one possible direction candidate it is either a maximum or minimum value. The direction of the beam antenna is determined from the two direction candidates by specifying one of the candidates depending upon whether a direction of the beam antenna is to the right or left, and determining the direction of the beam antenna from one direction candidate when the output data from the at least one magnetic detection devices corresponds to the minimum or maximum geomagnetic field data.

Abstract: The invention provides a method of producing a platelike article having a molding formed on a peripheral edge thereof, using an extrusion die having a cavity for supplying a molding material to the peripheral edge. The peripheral edge has a straight portion and a curved corner portion. The cavity has first and second cavity portions.

Abstract: First and second transistors are connected via a first switch. Second and third transistors are connected in parallel via a second switch. Either an input signal or an output ground voltage is applied to the gate of a third transistor via a third switch. In a LVTTL version, the first switch is on and the second switch is off. By the third switch, the output ground voltage is applied to the gate of the third transistor. As a result, first and second, transistors are arranged in series between the output power supply voltage and the output ground voltage, resulting in an output buffer circuit corresponding to a LVTTL. In a GTL version, the first switch is off and the second switch is on. An input signal is applied to the gate of the third transistor by the third switch. As a result, second and third transistors are arranged in parallel to form an open drain. This can be used as an output buffer circuit corresponding to a GTL.