Patents by Inventor Takashi Arao
Takashi Arao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8574998Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.Type: GrantFiled: December 5, 2011Date of Patent: November 5, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra Malhotra, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui, Takashi Arao, Naonori Fujiwara
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Publication number: 20130285202Abstract: To provide a semiconductor device including a capacitor which includes a cylindrical or columnar lower electrode, a support film in contact with the upper portion of the lower electrode for supporting the lower electrode, a dielectric film covering the lower electrode and the support film, and an upper electrode facing the lower electrode with the dielectric film interposed therebetween, wherein the dielectric film has a first thickness on the upper surface of the support film and a second thickness thinner than the first thickness on the side surface of the lower electrode, and thereby the mechanical strength of the support film is increased.Type: ApplicationFiled: March 12, 2013Publication date: October 31, 2013Applicant: ELPIDA MEMORY, INC.Inventors: Kenichi KOYANAGI, Takashi ARAO, Naonori FUJIWARA, Tomohiro UNO
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Publication number: 20130143379Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.Type: ApplicationFiled: December 5, 2011Publication date: June 6, 2013Applicants: Elpida Memory, Inc., Intermolecular, Inc.Inventors: Sandra Malholtra, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui, Takashi Arao, Naonori Fujiwara
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Patent number: 8288810Abstract: A semiconductor device comprises a capacitor in which a lower electrode, an adhesive layer, a capacitance insulating film, and an upper electrode are provided in series. The capacitance insulating film has laminated films in which a first metal oxide film and a second metal oxide film are alternatively laminated so that the first metal oxide film contacts with the adhesive layer. The adhesive layer has thickness of 0.3 nm or more and is an oxide film including at least one element selected from element contained in the lower electrode.Type: GrantFiled: August 25, 2010Date of Patent: October 16, 2012Assignee: Elpida Memory, IncInventor: Takashi Arao
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Patent number: 8277891Abstract: A technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus during a film formation process for forming a film on a semiconductor substrate. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. Ozone is supplied, as a precoat gas, into the reaction tube during the precoating process by a nozzle of a different type and/or position from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during the film formation process.Type: GrantFiled: April 23, 2010Date of Patent: October 2, 2012Assignee: Tokyo Electron LimitedInventors: Yuichiro Morozumi, Kenichi Koyanagi, Takashi Arao, Kazunori Une
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Publication number: 20120235276Abstract: A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.Type: ApplicationFiled: March 18, 2011Publication date: September 20, 2012Applicant: INTERMOLECULAR, INC.Inventors: Xiangxin Rui, Hanhong Chen, Edward Haywood, Sandra Malhotra, Takashi Arao, Naonori Fujiwara, Toshiyuki Hirota, Takakazu Kiyomura, Kenichi Koyanagi
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Publication number: 20110057239Abstract: A semiconductor device comprises a capacitor in which a lower electrode, an adhesive layer, a capacitance insulating film, and an upper electrode are provided in series. The capacitance insulating film has laminated films in which a first metal oxide film and a second metal oxide film are alternatively laminated so that the first metal oxide film contacts with the adhesive layer. The adhesive layer has thickness of 0.3 nm or more and is an oxide film including at least one element selected from element contained in the lower electrode.Type: ApplicationFiled: August 25, 2010Publication date: March 10, 2011Applicant: ELPIDA MEMORY, INC.Inventor: Takashi ARAO
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Publication number: 20100203741Abstract: Disclosed is a technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. The type and/or position of the nozzle for supplying ozone, as a precoat gas, into the reaction tube during the precoating process is different from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during forming of a film on a semiconductor substrate.Type: ApplicationFiled: April 23, 2010Publication date: August 12, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Yuichiro MOROZUMI, Kenichi Koyanagi, Takashi Arao, Kazunori Une
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Patent number: 7763500Abstract: First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.Type: GrantFiled: August 3, 2006Date of Patent: July 27, 2010Assignee: Elpida Memory, Inc.Inventors: Takashi Arao, Kenichi Koyanagi, Kenji Komeda, Naruhiko Nakanishi, Hideki Gomi
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Patent number: 7576016Abstract: An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper. A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.Type: GrantFiled: August 21, 2007Date of Patent: August 18, 2009Assignee: Elpida Memory, Inc.Inventors: Kenichi Koyanagi, Takashi Arao
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Publication number: 20080211002Abstract: This semiconductor device includes: a first cylinder interlayer insulating film; a second cylinder interlayer insulating film; a cylinder hole including a first cylinder hole and a second cylinder hole communicating with the first cylinder hole; and a capacitor including a lower electrode and an upper electrode. The first cylinder interlayer insulating film has an etching rate for etchant, which is two to six times as high as an etching rate for the second cylinder interlayer insulating film, a hole diameter of the first cylinder hole is larger than that of the second cylinder hole, and the hole diameter of the second cylinder hole near an interface between the first cylinder interlayer insulating film and the second cylinder interlayer insulating film increases as the second cylinder hole approaches the interface.Type: ApplicationFiled: December 21, 2007Publication date: September 4, 2008Applicant: ELPIDA MEMORY, INC.Inventors: Yoshitaka NAKAMURA, Takashi ARAO, Jiro MIYAHARA, Shigeo ISHIKAWA, Koji URABE
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Publication number: 20080066677Abstract: Disclosed is a technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. The type and/or position of the nozzle for supplying ozone, as a precoat gas, into the reaction tube during the precoating process is different from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during forming of a film on a semiconductor substrate.Type: ApplicationFiled: May 22, 2007Publication date: March 20, 2008Inventors: Yuichiro Morozumi, Kenichi Koyanagi, Takashi Arao, Kazunori Une
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Publication number: 20080050884Abstract: An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper. A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.Type: ApplicationFiled: August 21, 2007Publication date: February 28, 2008Applicant: ELPIDA MEMORY INC.Inventors: Kenichi KOYANAGI, Takashi ARAO
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Publication number: 20070032034Abstract: First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.Type: ApplicationFiled: August 3, 2006Publication date: February 8, 2007Inventors: Takashi Arao, Kenichi Koyanagi, Kenji Komeda, Naruhiko Nakanishi, Hideki Gomi
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Patent number: 6438929Abstract: A packaging machine comprises a filling device (13) for filling a tube T of packaging material having an open upper end and a closed lower end with contents in a predetermined amount at a time, and a device (14) for forming containers C by sealing and cutting the filled tube T transversely thereof into a length corresponding to one container at a time. The amount of contents to be filled into the container and the capacity of the container are so determined that the capacity is greater than the amount of contents to be filled.Type: GrantFiled: May 14, 2001Date of Patent: August 27, 2002Assignee: Shikoku Kakoki Co., Ltd.Inventors: Satoshi Kume, Takashi Arao, Michio Ueda
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Publication number: 20010047641Abstract: A packaging machine comprises a filling device 13 for filling a tube T of packaging material having an open upper end and a closed lower end with contents in a predetermined amount at a time, and a device 14 for forming containers C by sealing and cutting the filled tube T transversely thereof into a length corresponding to one container at a time. The amount of contents to be filled into the container and the capacity of the container are so determined that the capacity is greater than the amount of contents to be filled.Type: ApplicationFiled: May 14, 2001Publication date: December 6, 2001Applicant: Shikoku Kakoki Co., Ltd.Inventors: Satoshi Kume, Takashi Arao, Michio Ueda
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Patent number: 6162156Abstract: A packaging machine comprises a rotor 22 having radial mandrels 21 each adapted to carry a tubular blank 11 of square to rectangular cross section as fitted therearound and arranged to successively stop at a plurality of processing stations I to VIII, a group of devices 23 to 28 arranged respectively at the required stations among the processing stations I to VIII for folding and closing a container bottom forming end portion 14 of the blank 11 as fitted around the mandrel 21, and an air suction nozzle 31 for collecting extraneous matter is disposed at a required location along a path of movement of the mandrel.Type: GrantFiled: August 31, 1998Date of Patent: December 19, 2000Assignee: Shikoku Kakoki Co., Ltd.Inventors: Yasuji Fujikawa, Takashi Arao, Michio Ueda
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Patent number: 6041834Abstract: A liquid filling device comprises a filling nozzle 31 for filling contents into containers C being transported by a conveyor 13, and a lifter 34 for lifting the container C to be filled from the path of transport of the conveyor. The filling nozzle 31 has a lower portion providing a vertical cylinder portion 42 fittable with the container C to be lifted by the lifter 34. The filling nozzle 31 is provided with an air cover 51 comprising a top wall and a peripheral wall extending downward from an edge portion of the top wall. The filling nozzle 31 extends through the top wall, with its vertical cylinder portion 42 projecting into the air cover 51. The air cover 51 has connected thereto an outlet end of a dry air pipe 52.Type: GrantFiled: August 31, 1998Date of Patent: March 28, 2000Assignee: Shikoku Kakoki Co., Ltd.Inventors: Yasuji Fujikawa, Takashi Arao, Michio Ueda
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Patent number: 5094278Abstract: A filling nozzle comprising a vertical tubular nozzle body, and at least one perforated plate disposed at a lower-end opening of the nozzle body for preventing a liquid from flowing down under gravity by the surface tension of the liquid. The perforated plate has an opening degree varying from small to great from its center or the vicinity thereof toward its periphery or the vicinity thereof.Type: GrantFiled: February 19, 1991Date of Patent: March 10, 1992Assignee: Shikoku Kakoki Co., Ltd.Inventors: Takashi Arao, Yoshihiro Saijo, Tadaaki Kume
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Patent number: 4982770Abstract: An apparatus for filling a specified amount of liquid comprising a metering cylinder having a piston therein, a vertical filling nozzle having an open lower end and feedable with a liquid from the metering cylinder by the operation of the piston, a damper for opening and closing the open lower end of the filling nozzle, a spring biasing the damper to hold the nozzle end closed with the damper while the feed of the liquid is discontinued, and an opening portion adapted to open the damper against the spring simultaneously with or immediately before the start of feed of the liquid with the damper closed and to be subsequently brought out of operative relation with the damper before the feed of the liquid is discontinued so as to render the damper closable by the spring.Type: GrantFiled: February 8, 1990Date of Patent: January 8, 1991Assignee: Shikoku Kokoki Co., Ltd.Inventors: Yoshihiro Saijo, Takashi Arao, Yoshitaka Yamane