Abstract: A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.

Abstract: A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.

Abstract: A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position.

Abstract: A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.

Abstract: A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position.

Abstract: A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.