Patents by Inventor Takashi Chuman

Takashi Chuman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6404124
    Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: June 11, 2002
    Assignee: Pioneer Electronic Corporation
    Inventors: Kazuto Sakemura, Shuuichi Yanagisawa, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman, Takashi Yamada, Atsushi Yoshizawa, Hideo Satoh, Takamasa Yoshikawa, Kiyohide Ogasawara
  • Patent number: 6400070
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of a silicon wafer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: June 4, 2002
    Assignee: Pioneer Electronic Corporation
    Inventors: Takashi Yamada, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Hiroshi Ito, Atsushi Yoshizawa, Shuuichi Yanagisawa, Kazuto Sakemura
  • Patent number: 6388376
    Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
    Type: Grant
    Filed: August 5, 1999
    Date of Patent: May 14, 2002
    Assignee: Pioneer Corporation
    Inventors: Nobuyasu Negishi, Takuya Hata, Atsushi Yoshizawa, Hideo Satoh, Takashi Yamada, Takashi Chuman, Shingo Iwasaki, Takamasa Yoshikawa, Hiroshi Ito, Kiyohide Ogasawara
  • Publication number: 20010040430
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Application
    Filed: August 7, 1998
    Publication date: November 15, 2001
    Inventors: HIROSHI ITO, KIYOHIDE OGASAWARA, TAKAMASA YOSHIKAWA, TAKASHI CHUMAN, NOBUYASU NEGISHI, SHINGO IWASAKI, ATSUSHI YOSHIZAWA, TAKASHI YAMADA, SHUUICHI YANAGISAWA, KAZUTO SAKEMURA
  • Patent number: 6316873
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: November 13, 2001
    Assignee: Pioneer Electronic Corporation
    Inventors: Hiroshi Ito, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
  • Patent number: 6285123
    Abstract: An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: September 4, 2001
    Assignee: Pioneer Corporation
    Inventors: Takashi Yamada, Atsushi Yoshizawa, Takuya Hata, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman, Hideo Satoh, Hiroshi Ito, Takamasa Yoshikawa, Kiyohide Ogasawara
  • Publication number: 20010017369
    Abstract: An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
    Type: Application
    Filed: January 4, 2001
    Publication date: August 30, 2001
    Inventors: Shingo Iwasaki, Takashi Yamada, Takuya Hata, Takashi Chuman, Nobuyasu Negishi, Kazuto Sakemura, Atsushi Yoshizawa, Hideo Satoh, Takamasa Yoshikawa, Kiyohide Ogasawara
  • Patent number: 6278230
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: August 21, 2001
    Assignee: Pioneer Electronic Corporation
    Inventors: Atsushi Yoshizawa, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Hiroshi Ito, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
  • Patent number: 6259198
    Abstract: An electron emission device based flat panel display apparatus is composed of a pair of a back substrate and an optically transparent front substrate opposing to each other with a vacuum space interposed therebetween, and a plurality of electron emission devices, each of which includes an electron-supply layer made of metal or semiconductor, formed on ohmic electrodes formed on a surface of the back substrate proximate to the vacuum space, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer and facing the vacuum space. The front substrate includes collector electrodes formed on its surface proximate to the vacuum space, fluorescent material layers formed on the collector electrodes, and an image display array composed of a plurality of light emitting elements corresponding to the fluorescent material layers.
    Type: Grant
    Filed: December 23, 1998
    Date of Patent: July 10, 2001
    Assignee: Pioneer Electronic Corporation
    Inventors: Shuuchi Yanagisawa, Takamasa Yoshikawa, Kazuto Sakemura, Atsushi Yoshizawa, Takashi Chuman, Nobuyasu Negishi, Takashi Yamada, Shingo Iwasaki, Hiroshi Ito, Kiyohide Ogasawara
  • Patent number: 6184612
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: February 6, 2001
    Assignee: Pioneer Electronic Corporation
    Inventors: Nobuyasu Negishi, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Shingo Iwasaki, Hiroshi Ito, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
  • Patent number: 6166487
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: December 26, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Nobuyasu Negishi, Takamasa Yoshikawa, Takashi Chuman, Kiyohide Ogasawara, Shingo Iwasaki, Hiroshi Ito
  • Patent number: 6147443
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: November 14, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
  • Patent number: 6144155
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: November 7, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
  • Patent number: 6130503
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: October 10, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Nobuyasu Negishi, Takamasa Yoshikawa, Takashi Chuman, Kiyohide Ogasawara, Shingo Iwasaki, Hiroshi Ito
  • Patent number: 6066922
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: May 23, 2000
    Assignee: Pioneer Electronic Corporation
    Inventors: Shingo Iwasaki, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Hiroshi Ito, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
  • Patent number: 6023124
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: February 8, 2000
    Assignee: Pioneer Electric Corporation
    Inventors: Takashi Chuman, Shingo Iwasaki
  • Patent number: 5990605
    Abstract: An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
    Type: Grant
    Filed: March 20, 1998
    Date of Patent: November 23, 1999
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Kiyohide Ogasawara, Hiroshi Ito, Masataka Yamaguchi, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman
  • Patent number: 5986390
    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an SiO.sub.2 insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The peak intensity ratio of a Raman spectrum for 3-fold rings of SiO.sub.2 of the insulator layer to 4-fold rings or 5 or more-fold rings thereof is equal to or greater than 20%. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
    Type: Grant
    Filed: March 3, 1998
    Date of Patent: November 16, 1999
    Assignee: Pioneer Electronic Corporation
    Inventors: Takashi Chuman, Takamasa Yoshikawa
  • Patent number: 5635268
    Abstract: An optical recording medium is provided with: a first substrate of optically transparent type; a first recording layer formed on one surface of the first substrate, which includes phthalocyanine dye; a second substrate of optically transparent type; a second recording layer formed on one surface of the second substrate which includes phthalocyanine dye; a first elastic body layer formed on a surface of the first recording layer at a side opposite to the first substrate; a second elastic body layer formed on a surface of the second recording layer at a side opposite to the second substrate; and a bonding layer formed between the first elastic body layer and the second elastic body layer.
    Type: Grant
    Filed: June 19, 1995
    Date of Patent: June 3, 1997
    Assignee: Pioneer Electronic Corporation
    Inventors: Takako Miyake, Shingo Iwasaki, Yasushi Araki, Takashi Chuman, Satoru Tanaka, Atsushi Yoshizawa, Fumio Matsui
  • Patent number: 5580631
    Abstract: An optical recording medium comprises a light transmissive substrate, a record film formed on a surface of the base plate, the record film containing phthalocyanine as a coloring matter, a light-reflection film formed on a surface of the record film, and a protection film formed on a surface of the light-reflection film, the protection film having a thickness capable of preventing the light-reflection film from braking by a deformation thereof in directions to the light-reflection film and the protection film due to a formation of a pit in the record film.
    Type: Grant
    Filed: November 5, 1993
    Date of Patent: December 3, 1996
    Assignee: Pioneer Electronic Corporation
    Inventors: Toshiyuki Miyadera, Takashi Chuman, Takashi Yamada, Fumio Matsui