Patents by Inventor Takashi Chuman
Takashi Chuman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030048745Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer deposited over an electron source layer formed over an ohmic electrode; and a metal thin film electrode deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.Type: ApplicationFiled: January 5, 2001Publication date: March 13, 2003Applicant: Pioneer CorporationInventors: Takamasa Yoshikawa, Hideo Satoh, Atsushi Yoshizawa, Takashi Yamada, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kazuto Sakemura, Takuya Hata, Kiyohide Ogasawara
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Patent number: 6472803Abstract: An electron emission light-emitting device comprises an electron emission device and a fluorescent material layer formed on the thin-film metal. The electron emission device comprises an electron-supply layer made of semiconductor formed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron emission light-emitting device emits light when an electric field is applied between the electron-supply layer and the thin-film metal.Type: GrantFiled: August 6, 1999Date of Patent: October 29, 2002Assignee: Pioneer CorporationInventors: Atsushi Yoshizawa, Hideo Satoh, Takashi Yamada, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Takuya Hata, Takamasa Yoshikawa, Hiroshi Ito, Kiyohide Ogasawara
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Publication number: 20020125490Abstract: A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.Type: ApplicationFiled: December 28, 2001Publication date: September 12, 2002Applicant: PIONEER CORPORATIONInventors: Takashi Chuman, Takamasa Yoshikawa, Takuya Hata, Kazuto Sakemura, Takashi Yamada, Nobuyasu Negishi, Shingo Iwasaki, Hideo Satoh, Atsushi Yoshizawa, Kiyohide Ogasawara
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Publication number: 20020117963Abstract: A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.Type: ApplicationFiled: December 28, 2001Publication date: August 29, 2002Applicant: PIONEER CORPORATIONInventors: Takashi Chuman, Takamasa Yoshikawa, Takuya Hata, Kazuto Sakemura, Takashi Yamada, Nobuyasu Negishi, Shingo Iwasaki, Hideo Satoh, Atsushi Yoshizawa, Kiyohide Ogasawara
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Publication number: 20020076070Abstract: A speaker includes a silicone wafer 1, a thermal barrier layer 2 formed by anodizing a part of the silicone wafer 1, and an exothermic electrode 3 made of aluminum formed on the thermal barrier layer 2.Type: ApplicationFiled: December 11, 2001Publication date: June 20, 2002Applicant: PIONEER CORPORATIONInventors: Takamasa Yoshikawa, Kiyohide Ogasawara, Hideo Satoh, Atsushi Yoshizawa, Shingo Iwasaki, Nobuyasu Negishi, Takashi Yamada, Takashi Chuman, Kazuto Sakemura, Takuya Hata
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Patent number: 6404124Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.Type: GrantFiled: July 28, 1999Date of Patent: June 11, 2002Assignee: Pioneer Electronic CorporationInventors: Kazuto Sakemura, Shuuichi Yanagisawa, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman, Takashi Yamada, Atsushi Yoshizawa, Hideo Satoh, Takamasa Yoshikawa, Kiyohide Ogasawara
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Patent number: 6400070Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of a silicon wafer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: August 7, 1998Date of Patent: June 4, 2002Assignee: Pioneer Electronic CorporationInventors: Takashi Yamada, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Hiroshi Ito, Atsushi Yoshizawa, Shuuichi Yanagisawa, Kazuto Sakemura
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Patent number: 6388376Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.Type: GrantFiled: August 5, 1999Date of Patent: May 14, 2002Assignee: Pioneer CorporationInventors: Nobuyasu Negishi, Takuya Hata, Atsushi Yoshizawa, Hideo Satoh, Takashi Yamada, Takashi Chuman, Shingo Iwasaki, Takamasa Yoshikawa, Hiroshi Ito, Kiyohide Ogasawara
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Publication number: 20010040430Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: ApplicationFiled: August 7, 1998Publication date: November 15, 2001Inventors: HIROSHI ITO, KIYOHIDE OGASAWARA, TAKAMASA YOSHIKAWA, TAKASHI CHUMAN, NOBUYASU NEGISHI, SHINGO IWASAKI, ATSUSHI YOSHIZAWA, TAKASHI YAMADA, SHUUICHI YANAGISAWA, KAZUTO SAKEMURA
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Patent number: 6316873Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: August 7, 1998Date of Patent: November 13, 2001Assignee: Pioneer Electronic CorporationInventors: Hiroshi Ito, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
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Patent number: 6285123Abstract: An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.Type: GrantFiled: September 10, 1999Date of Patent: September 4, 2001Assignee: Pioneer CorporationInventors: Takashi Yamada, Atsushi Yoshizawa, Takuya Hata, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman, Hideo Satoh, Hiroshi Ito, Takamasa Yoshikawa, Kiyohide Ogasawara
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Publication number: 20010017369Abstract: An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.Type: ApplicationFiled: January 4, 2001Publication date: August 30, 2001Inventors: Shingo Iwasaki, Takashi Yamada, Takuya Hata, Takashi Chuman, Nobuyasu Negishi, Kazuto Sakemura, Atsushi Yoshizawa, Hideo Satoh, Takamasa Yoshikawa, Kiyohide Ogasawara
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Patent number: 6278230Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: August 7, 1998Date of Patent: August 21, 2001Assignee: Pioneer Electronic CorporationInventors: Atsushi Yoshizawa, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Hiroshi Ito, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
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Patent number: 6259198Abstract: An electron emission device based flat panel display apparatus is composed of a pair of a back substrate and an optically transparent front substrate opposing to each other with a vacuum space interposed therebetween, and a plurality of electron emission devices, each of which includes an electron-supply layer made of metal or semiconductor, formed on ohmic electrodes formed on a surface of the back substrate proximate to the vacuum space, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer and facing the vacuum space. The front substrate includes collector electrodes formed on its surface proximate to the vacuum space, fluorescent material layers formed on the collector electrodes, and an image display array composed of a plurality of light emitting elements corresponding to the fluorescent material layers.Type: GrantFiled: December 23, 1998Date of Patent: July 10, 2001Assignee: Pioneer Electronic CorporationInventors: Shuuchi Yanagisawa, Takamasa Yoshikawa, Kazuto Sakemura, Atsushi Yoshizawa, Takashi Chuman, Nobuyasu Negishi, Takashi Yamada, Shingo Iwasaki, Hiroshi Ito, Kiyohide Ogasawara
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Patent number: 6184612Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: August 7, 1998Date of Patent: February 6, 2001Assignee: Pioneer Electronic CorporationInventors: Nobuyasu Negishi, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Shingo Iwasaki, Hiroshi Ito, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura
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Patent number: 6166487Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: March 7, 2000Date of Patent: December 26, 2000Assignee: Pioneer Electronic CorporationInventors: Nobuyasu Negishi, Takamasa Yoshikawa, Takashi Chuman, Kiyohide Ogasawara, Shingo Iwasaki, Hiroshi Ito
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Patent number: 6147443Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: May 14, 1998Date of Patent: November 14, 2000Assignee: Pioneer Electronic CorporationInventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
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Patent number: 6144155Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: May 14, 1998Date of Patent: November 7, 2000Assignee: Pioneer Electronic CorporationInventors: Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
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Patent number: 6130503Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: February 27, 1998Date of Patent: October 10, 2000Assignee: Pioneer Electronic CorporationInventors: Nobuyasu Negishi, Takamasa Yoshikawa, Takashi Chuman, Kiyohide Ogasawara, Shingo Iwasaki, Hiroshi Ito
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Patent number: 6066922Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.Type: GrantFiled: August 7, 1998Date of Patent: May 23, 2000Assignee: Pioneer Electronic CorporationInventors: Shingo Iwasaki, Kiyohide Ogasawara, Takamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Hiroshi Ito, Atsushi Yoshizawa, Takashi Yamada, Shuuichi Yanagisawa, Kazuto Sakemura