Abstract: The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: LiyFe(1-x)CoxPO4(0<x?0.019, 0?y?1.2). By using the positive active material for a lithium secondary battery, high temperature storage stability and charge and discharge cycle performance can be improved in comparison with a case where LiyFePO4 containing no Co is used. By using the positive active material, a lithium ion secondary battery can be suitable for applications in fields of electric automobiles and industrial batteries in which long lives, high capacities, and high output powers are required.

Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

Abstract: A master cylinder includes a cylinder body, a reservoir connection port formed at a surface of the cylinder body and being in communication with a reservoir, a pressure chamber formed inside of the cylinder body, a reservoir fluid passage connecting the reservoir connection port and the pressure chamber, a valve mechanism accommodated within the reservoir connection port and reducing an amount of fluid flowing in the reservoir fluid passage in a case where the reservoir fluid passage is at a high pressure, and a valve body including a small diameter cylindrical portion and a large diameter cylindrical portion, the small diameter cylindrical portion forming a passage by means of which the reservoir and the reservoir fluid passage communicate, the large diameter cylindrical portion having one end connected to the small diameter cylindrical portion and the other end fixed to the reservoir connection port, the valve body accommodating the valve mechanism.

Abstract: The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: LiyFe(1-x)CoxPO4 (0<x?0.019, 0?y?1.2). By using the positive active material for a lithium secondary battery, high temperature storage stability and charge and discharge cycle performance can be improved in comparison with a case where LiyFePO4 containing no Co is used. By using the positive active material, a lithium ion secondary battery can be suitable for applications in fields of electric automobiles and industrial batteries in which long lives, high capacities, and high output powers are required.

Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

Abstract: A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Abstract: A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Abstract: A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Abstract: A master cylinder includes a cylinder body, a reservoir connection port formed at a surface of the cylinder body and being in communication with a reservoir, a pressure chamber formed inside of the cylinder body, a reservoir fluid passage connecting the reservoir connection port and the pressure chamber, a valve mechanism accommodated within the reservoir connection port and reducing an amount of fluid flowing in the reservoir fluid passage in a case where the reservoir fluid passage is at a high pressure, and a valve body including a small diameter cylindrical portion and a large diameter cylindrical portion, the small diameter cylindrical portion forming a passage by means of which the reservoir and the reservoir fluid passage communicate, the large diameter cylindrical portion having one end connected to the small diameter cylindrical portion and the other end fixed to the reservoir connection port, the valve body accommodating the valve mechanism.

Abstract: A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

Abstract: A polymer electrolyte fuel cell comprises a catalyst layer; a cation exchange resin provided in the catalyst layer; a proton conductive path provided in the cation exchange resin; a carbon material provided in the catalyst layer; and a catalyst metal provided in the catalyst layer. 50 mass % or more of the catalyst metal is loaded on the contact surface between the proton conductive path and the carbon material, and the porosity of the catalyst layer is 65% to 87.5%.

Abstract: A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.

Abstract: A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

Abstract: An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 1011/cm2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/cm2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/m2 or less, as well.

Abstract: Method and device for use in an active node included in an active network to allocate a sequence of packets received by the active node are provided. At first, the node receives each packet of the sequence and allocates each packet to a part of the resources by processing the packet sequence. Next, the node schedules a duration available for the part of the resources and measures the duration. And finally, the node releases the part of the resources with the remaining parts of the resources unreleased.

Abstract: An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 1011/cm2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/cm2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/m2 or less, as well.

Abstract: In a reconfigurable network shared by multiple users, a reservation request is sent from a user who desires to establish a network resource in the network. The request contains indications of a circuit assigned to the user, a network resource desired to be allocated from the resource of the assigned circuit, dates and start and end times of a reservation time span. A reservation system includes an interface connected to the user networks for receiving the request, a first database, a second database for storing resources respectively assigned to the user networks. An admission controller connected to the interface is responsive to a user's request for accessing the first and second databases to verify the availability of the desired resource, and informs the user as to the results of the verification. If the desired resource is available, the data of the request is stored into the first database. As a separate unit, a link control module is provided which is connected to one of the interconnection switches.

Abstract: The invention relates to derivatives of pyrrolidin-2-ylcarbonylheterocyclic compound of the general formula ##STR1## in which R.sup.1 represents C.sub.1-6 alkyl, C.sub.1-20 cycloalkyl, aryl or heteroaryl,R.sup.2 represents a heterocyclic compound selected from the group consisting of 2-thiazole, 2-oxazole, 2-imidazole, 2-pyrrole, 2-thiophene, 2-benzothiazole, 2-benzoxazole, 2-benzimidazole, 2-indole, 2-thiazolo[5,4-b]pyridine, 2-oxazolo[4,5-b]pyridine, 2-imidazo[4,5-b]pyridine, 5-thiazole, 2-thiazoline, 2-pyridine, 3-pyridine, 5-pyrimidine, 2-pyrazine, 2-triazole or 2-pyrazole wherein the heterocyclic compound may be unsubstituted or substituted independently with R.sup.4 or R.sup.5 wherein R.sup.4 and R.sup.5 are H, C.sub.1-5 alkyl, aryl or R.sup.4 and R.sup.

Abstract: In a method of manufacturing semiconductor devices wherein a III-V compound semiconductor substrate is annealed in gas atmosphere of which the gas includes an element constituting the III-V compound semiconductor substrate to reduce the dislocation density near the III-V compound semiconductor substrate surface.