Abstract: The present disclosure is related to ensuring a period for detecting a phase current from a DC bus current of an inverter. A motor control circuit of the present disclosure includes: a voltage command generator and a PWM signal generator. The voltage command generator detects a phase current from a DC bus current of an inverter driving an AC motor, and generating three-phase voltage commands. The PWM signal generator generates three-phase PWM signals to the inverter according to a comparison result of the three-phase voltage commands and a triangular wave signal with a predetermined frequency and outputs the three-phase PWM signals to the inverter. The PWM signal generator corrects a maximum or minimum voltage command by synchronizing the maximum or minimum voltage command with an intermediate command in a first period of multiple consecutive PWM periods.

Abstract: The present disclosure relates to a motor control system including: a motor control device, including a semiconductor integrated circuit having a memory and forming a control loop for a motor so as to control a drive of the motor; and an external debug device, externally connected to the motor control device and accessible to the memory in the motor control device. The external debug device includes a disturbance signal superimposer and a frequency characteristics deriver. The interference signal superimposer generates a disturbance signal for the control loop and superimposes the disturbance signal on a signal generated in the control loop. The frequency characteristics deriver derives frequency characteristics of the control loop based on the signal generated in the control loop by superimposition.

Abstract: The present disclosure is related to ensuring a period for detecting a phase current from a DC bus current of an inverter. A motor control circuit of the present disclosure includes: a voltage command generator and a PWM signal generator. The voltage command generator detects a phase current from a DC bus current of an inverter driving an AC motor, and generating three-phase voltage commands. The PWM signal generator generates three-phase PWM signals to the inverter according to a comparison result of the three-phase voltage commands and a triangular wave signal with a predetermined frequency and outputs the three-phase PWM signals to the inverter. The PWM signal generator corrects a maximum or minimum voltage command by synchronizing the maximum or minimum voltage command with an intermediate command in a first period of multiple consecutive PWM periods.

Abstract: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

Abstract: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

Abstract: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

Abstract: A high side switch circuit includes a switch electrically connected between input and output terminals, a gate control unit, and an over-current sensor unit. The over-current sensor unit includes a resistive element and a comparator. The comparator senses an over-current if a voltage of the resistive element exceeds a threshold voltage. The comparator is adjusted in advance such that the detected voltage at the time of over-current exceeds the threshold voltage. Even if accuracy of resistance value of the resistive element is not high, accuracy of detecting over-current can be improved by adjusting the comparator.

Abstract: A high side switch circuit includes a switch electrically connected between input and output terminals, a gate control unit, and an over-current sensor unit. The over-current sensor unit includes a resistive element and a comparator. The comparator senses an over-current if a voltage of the resistive element exceeds a threshold voltage. The comparator is adjusted in advance such that the detected voltage at the time of over-current exceeds the threshold voltage. Even if accuracy of resistance value of the resistive element is not high, accuracy of detecting over-current can be improved by adjusting the comparator.

Abstract: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

Abstract: An information processing device retrieves external data stored in an external memory and performs predetermined first processing for the external data thus retrieved. Here, the information processing device has: a storage that stores retrieval control information transmitted from outside; and a retrieval controller that controls retrieval of the external data according to the retrieval control information. This makes it possible to efficiently perform the retrieval of data from the external memory, and alleviate the burden on a control device corresponding to a BB-CPU.