Patents by Inventor Takashi Eura

Takashi Eura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device
    Patent number: 6869865
    Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 ?m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: March 22, 2005
    Assignees: Renesas Technology Corp., Ion Engineering Research Institute Corporation
    Inventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
  • Method of manufacturing semiconductor device
    Publication number: 20040087118
    Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 &mgr;m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
    Type: Application
    Filed: June 30, 2003
    Publication date: May 6, 2004
    Applicants: Renesas Technology Corp., Ion Engineering Research Institute, Corporation, Natsuro Tsubouchi
    Inventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
  • Excimer laser device
    Patent number: 5187716
    Abstract: At least the opposing surface portions of the main electrodes of an excimer laser device are covered with materials which are resistive to chemical etching than nickel. The etching resistive material may be a platinum based alloy containing rhodium, ruthenium, iridium, or osmium; a nickel based alloy containing gold, platinum, rhodium, ruthenium, iridium, or osmium; or rhodium, ruthenium, iridium, or osmium. Thus, an excimer laser device is realized by which the lives of the electrodes and the laser gas are prolonged.
    Type: Grant
    Filed: July 3, 1991
    Date of Patent: February 16, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenyu Haruta, Haruhiko Nagai, Hajime Nakatani, Yoshihiko Yamamoto, Taketoshi Takemura, Takashi Eura, Shungo Tsuboi, Yoshifumi Matsushita, Tadao Minagawa