Abstract: A substrate bonding system in one manner of the present disclosure includes a surface treatment module configured to perform plasma processing on a surface of a substrate. The substrate bonding system includes a deposition module coupled to the surface treatment module such that the substrate is transferred to the deposition module without being exposed to atmosphere, the deposition module being configured to perform a deposition process on the substrate on which the plasma processing is performed in the surface treatment module. The substrate bonding system includes a bonding module coupled to the deposition module such that the substrate is transferred to the bonding module without exposing the substrate to the atmosphere, the bonding module being configured to bond substrates on which the deposition process is performed in the deposition module, to form a bonded body.

Abstract: A vaporizer includes: a gas-liquid mixer for mixing a solution containing a precursor and a carrier gas; a nozzle for injecting the mixed solution; a vaporization chamber in which the injected solution is vaporized; a first temperature-adjustment-mechanism for adjusting a chamber temperature of the vaporization chamber; a second temperature-adjustment-mechanism for adjusting a mixing temperature of the gas-liquid mixer; a third temperature-adjustment-mechanism for adjusting a nozzle temperature of the nozzle; and a control device for controlling the first temperature-adjustment-mechanism to adjust the chamber temperature to a first temperature higher than a vaporization temperature of the precursor, for controlling the second temperature-adjustment-mechanism to adjust the mixing temperature to a second temperature lower than the first temperature, and for controlling the third temperature-adjustment-mechanism to adjust the nozzle temperature to a third temperature ranging from the first temperature to the sec

Abstract: Disclosed are: a transparent electrode having a zinc oxide film wherein initial characteristics and humidity resistance during long-time use coexist; and a thin film solar cell provided with said electrode. The transparent electrode contains a transparent conductive layer mainly made of zinc oxide. The transparent conductive film preferably has the following characteristics: having surface irregularities; a carrier concentration of 9×1019 cm?3 or less; a crystal structure having a (110) preferred orientation; a ratio of a (110) peak intensity to a (002) peak intensity I(110)/I(002) measured by X-ray diffraction being 50 or more; and a crystallite with a (110) orientation has a size of: 23 nm or more and 50 nm or less, in a planar direction parallel to a substrate; and 30 nm or more and 60 nm or less, in a planar direction perpendicular to the substrate.

Abstract: Provided is a thin film photoelectric conversion device with maximized output characteristic, which is achieved by improving an uneven current value of a photoelectric conversion cell caused by an uneven film thickness and an uneven film quality of a photoelectric conversion semiconductor layer, which may be generated in scaling up an integrated-type thin film photoelectric conversion device. The thin film photoelectric conversion device includes: a substrate, a transparent electrode layer, a photoelectric conversion unit, and a back electrode layer. An increasing rate ?Zt of the film thickness Zt of the transparent electrode layer along X and an increasing rate ?Zs of the film thickness Zs of the photoelectric conversion unit along X have different signs, wherein one line segment in a parallel direction to a main surface of the substrate is taken as X?.

Abstract: Disclosed are: a transparent electrode having a zinc oxide film wherein initial characteristics and humidity resistance during long-time use coexist; and a thin film solar cell provided with said electrode. The transparent electrode contains a transparent conductive layer mainly made of zinc oxide. The transparent conductive film preferably has the following characteristics: having surface irregularities; a carrier concentration of 9×1019 cm?3 or less; a crystal structure having a (110) preferred orientation; a ratio of a (110) peak intensity to a (002) peak intensity I(110)/I(002) measured by X-ray diffraction being 50 or more; and a crystallite with a (110) orientation has a size of: 23 nm or more and 50 nm or less, in a planar direction parallel to a substrate; and 30 nm or more and 60 nm or less, in a planar direction perpendicular to the substrate.

Abstract: Provided is a thin film photoelectric conversion device with maximized output characteristic, by improving an uneven current value of a photoelectric conversion cell caused by an uneven film thickness and an uneven film quality of a photoelectric conversion semiconductor layer, which may be generated in scaling up an integrated-type thin film photoelectric conversion device. The thin film photoelectric conversion device includes: a substrate, a transparent electrode layer, a photoelectric conversion unit, and a back electrode layer. An increasing rate ?Zt of the film thickness Zt of the transparent electrode layer along X and an increasing rate ?Zs of the film thickness Zs of the photoelectric conversion unit along X have different signs, whereas one line segment in a parallel direction to a main surface of the substrate is taken as X?.