Abstract: According to one embodiment, a storage device includes a control apparatus and a stocker. The control apparatus writes data to or reads data from a storage medium that includes a plurality of non-volatile memory chips. The stocker stores a plurality of the storage media that are detached from the control apparatus. The control apparatus includes a first temperature control system. The first temperature control system raises temperature of the storage medium to a first temperature or higher. The stocker includes a second temperature control system. The second temperature control system cools the storage medium to a second temperature or lower. The second temperature is lower than the first temperature.

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

Abstract: There is provided a camera module including: a movable body including an optical element; a fixed portion having a surface facing the movable body in a direction intersecting an optical axis of the optical element; a first drive unit having a portion arranged on a first surface of the movable body, for generating a first driving force for moving the movable body in a first direction; a second drive unit having a portion arranged on a second surface of the movable body different from the first surface, for generating a second driving force for moving the movable body in a second direction intersecting the first direction; and a position sensing unit arranged on a surface of the fixed portion facing the first surface of the movable body, or on the first surface of the movable body, for detecting positions in the first and second directions of the movable body.

Abstract: A radiographic imaging apparatus includes a radiation detection panel that includes an effective imaging area configured to detect radiation transmitted through a subject and incident on an incident surface, and a housing that accommodates the radiation detection panel. The housing includes a thick section that is thick in a direction normal to the incident surface and located at one end of the housing, and a thin section that is thinner than the thick section and overlaps the effective imaging area at least in part as seen in the direction normal to the incident surface. The thick section includes a grip portion of recessed shape.

Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers that each include tungsten; a plurality of insulating films that include a stacked portion and a first projecting portion projecting; a semiconductor layer extending through an inside of a stacked body; a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer; a plurality of second conductive layers that are each arranged on the first projecting portion in such a manner as to be in contact with a single first conductive layer and that include silicon containing an impurity; and a plurality of contact plugs that are each provided on a single second conductive layer in such a manner as to be in contact with the single second conductive layer.

Abstract: A semiconductor storage device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the semiconductor layer in a second direction intersecting the first direction, extending in a third direction intersecting the first direction and the second direction, and facing the plurality of conductive layers; and a plurality of first nitride films containing nitrogen (N), and covering surfaces of the plurality of conductive layers facing the first structure.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.

Abstract: An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: This composite comprises: a material having electrical conductivity; and a transition metal oxide which is supported by said material. The transition metal oxide has an amorphous structure.

Abstract: A memory chip unit includes a pad electrode including first and second portions, and a memory cell array. A prober includes a probe card and a movement mechanism. The probe card includes a probe electrode to be in contact with the pad electrode, and a memory controller electrically coupled to the probe electrode and executes reading and writing on the memory cell array. The movement mechanism executes a first operation that brings the probe electrode into contact with the first portion and does not bring the probe electrode into contact with the second portion, and a second operation that does not bring the probe electrode into contact with the first portion and brings the probe electrode into contact with the second portion.

Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: There is provided a camera module including: a movable body including an optical element; a fixed portion having a surface facing the movable body in a direction intersecting an optical axis of the optical element; a first drive unit having a portion arranged on a first surface of the movable body, for generating a first driving force for moving the movable body in a first direction; a second drive unit having a portion arranged on a second surface of the movable body different from the first surface, for generating a second driving force for moving the movable body in a second direction intersecting the first direction; and a position sensing unit arranged on a surface of the fixed portion facing the first surface of the movable body, or on the first surface of the movable body, for detecting positions in the first and second directions of the movable body.

Abstract: An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Abstract: An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

Abstract: A semiconductor device according to the present embodiment comprises a stack including a plurality of electrode films stacked in a first direction to be separated from each other. A column portion extends in the stack in the first direction and includes a semiconductor layer, and has memory cells at respective intersections of the semiconductor layer and the electrode films. A dividing portion extends in the stack in the first direction and a second direction crossing the first direction, divides the electrode films in a third direction crossing the first direction and the second direction, and includes an insulator. A first film is provided between the insulator and an end surface in the third direction of each of the electrode films and contains a first metal and silicon.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.