Abstract: A catalyst for synthesizing liquefied petroleum gas according to the present invention includes: a Cu—Zn-based catalytic material; and an MFI-type zeolite catalytic material supporting Pt, in which a ratio of the molar number of SiO2 to the molar number of Al2O3 contained in the MFI-type zeolite catalytic material (molar number of SiO2/molar number of Al2O3) is 20 or more and 60 or less.

Abstract: An energy storage apparatus 50 includes: a cell 62; positive and negative external terminals 51, 52; a current interruption device 53 disposed on a first line 55P that connects the cell and one of the external terminals; a resistor 54 for current measurement that is disposed on a second line 55N that connects the cell and the other of the external terminals; a discharge circuit 120 connected to the cell 62 and the current interruption device 53 in parallel; and a control device 130. The discharge circuit 120 includes a discharge resistor 121 and a discharge switch 123.

Abstract: A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.

Abstract: A catalyst for synthesizing liquefied petroleum gas according to the present invention includes: a Cu—Zn-based catalytic material; and an MFI-type zeolite catalytic material supporting a noble metal, in which the MFI-type zeolite catalytic material contains P, and a ratio of mass (MP) of P in the MFI-type zeolite catalytic material to mass (M2) of the MFI-type zeolite catalytic material is more than 0 mass % and less than 4.5 mass %.

Abstract: This composite comprises: a material having electrical conductivity; and a transition metal oxide which is supported by said material. The transition metal oxide has an amorphous structure.

Abstract: A memory chip unit includes a pad electrode including first and second portions, and a memory cell array. A prober includes a probe card and a movement mechanism. The probe card includes a probe electrode to be in contact with the pad electrode, and a memory controller electrically coupled to the probe electrode and executes reading and writing on the memory cell array. The movement mechanism executes a first operation that brings the probe electrode into contact with the first portion and does not bring the probe electrode into contact with the second portion, and a second operation that does not bring the probe electrode into contact with the first portion and brings the probe electrode into contact with the second portion.

Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: There is provided a camera module including: a movable body including an optical element; a fixed portion having a surface facing the movable body in a direction intersecting an optical axis of the optical element; a first drive unit having a portion arranged on a first surface of the movable body, for generating a first driving force for moving the movable body in a first direction; a second drive unit having a portion arranged on a second surface of the movable body different from the first surface, for generating a second driving force for moving the movable body in a second direction intersecting the first direction; and a position sensing unit arranged on a surface of the fixed portion facing the first surface of the movable body, or on the first surface of the movable body, for detecting positions in the first and second directions of the movable body.

Abstract: An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Abstract: An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

Abstract: A semiconductor device according to the present embodiment comprises a stack including a plurality of electrode films stacked in a first direction to be separated from each other. A column portion extends in the stack in the first direction and includes a semiconductor layer, and has memory cells at respective intersections of the semiconductor layer and the electrode films. A dividing portion extends in the stack in the first direction and a second direction crossing the first direction, divides the electrode films in a third direction crossing the first direction and the second direction, and includes an insulator. A first film is provided between the insulator and an end surface in the third direction of each of the electrode films and contains a first metal and silicon.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.

Abstract: A member mountable to a mounting portion provided with an ink receiving tube and a plurality of electrical connecting portions, the member includes a first portion including an outwardly facing surface and provided with an inserting portion into which the ink receiving tube is capable of being inserted; a second portion opposite from the first portion; and a third portion connecting the first portion and the second portion with each other and provided with a plurality of pad electrodes electrically connectable with the electrical connecting portions. The member is mountable to the mounting portion by being inserted into the mounting portion in an inserting direction with the first portion at a leading side. The pad electrodes are electrically connectable with the electrical connecting portions by being moved in a direction different from the inserting direction.

Abstract: A member includes a plurality of pad electrodes and a casing, wherein the plurality of pad electrodes are mounted on the casing and are rotatable relative to the casing on the casing.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.

Abstract: Provided is a camera module, comprising a controller including a first position control unit generating a first position control signal indicating a first target position to which an object provided with an image sensor or a lens is to be moved, and a first master port outputting the first position control signal, a first driver including a first slave port connected to the first master port, a first driving unit providing driving force to the object based on the first position control signal, a second position control unit generating a second position control signal indicating a second target position to which the object is to be moved, and a second master port outputting the second position control signal, and a second driver including a second slave port connected to the second master port, a second driving unit providing driving force to the object based on the second position control signal.

Abstract: A radiographic imaging apparatus includes a radiation detector configured to convert incident radiation into an electric signal related to a radiographic image, a casing containing the radiation detector, and an antibacterial layer formed on at least part of a surface of the casing. An average thickness of the antibacterial layer is thicker than 0.05 ?m and thinner than 0.5 ?m.