Abstract: A solid-state imaging device Comprising a photosensing portion for performing opto-electric conversion and a light shielding film formed so as not to cover a photosensing surface of the photosensing portion. An overcoat layer formed of a first transparent material is formed so as to cover the photosensing surface of the photosensing portion, and a recessed portion is formed in the overcoat layer at a position just above the photosensing surface. The recessed portion has a top surface having a concavity toward the photosensing surface. A lens portion formed of a second transparent material having a refractive index higher than that of the first transparent material is embedded in the recessed portion.

Abstract: A solid state imager device having a substrate of a first conductivity type, a charge storage area of a second conductivity type formed on the substrate of the first conductivity type, and a forward electrode formed on the charge storage area of the second conductivity type through an insulating layer, and the forward electrode is alternately supplied with a first voltage for accumulating charges of the first conductivity type on a boundary between the charge storage area of the second conductivity type and the insulating layer and a second voltage so as to extend the depletion layer formed beneath the charge storage area of the second conductivity type.