Patents by Inventor Takashi Furutsuka

Takashi Furutsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4048646
    Abstract: A dual-gate Schottky barrier gate field effect transistor is provided with an intermediate electrode between a first and a second gate electrode. This intermediate electrode forms an ohmic contact with a semiconductor substrate of the transistor. The transistor is produced by etching a first film formed on a planar surface of the substrate by the use of a pair of mask pieces to leave a pair of gate electrodes narrower than the mask pieces and projecting a metal capable of forming an ohmic contact with the semiconductor towards the planar surface perpendicularly thereof. The projected metal provides source and drain electrode on both sides of the gate electrode pair and an intermediate electrode between the gate electrodes. The intermediate electrode may be left floating during operation.
    Type: Grant
    Filed: February 25, 1976
    Date of Patent: September 13, 1977
    Assignee: Nippon Electric Company, Limited
    Inventors: Masaki Ogawa, Takashi Furutsuka, Masaoki Ishikawa