Abstract: A film formation apparatus for forming a self-assembled monomolecular film on a film formation surface of a substrate includes: a chamber for accommodating the substrate, the chamber including a facing inner wall surface facing the film formation surface of the substrate, the facing inner wall surface being a ground potential surface; a source gas supply part for supplying a source gas for the self-assembled monomolecular film into the chamber; and an electrode positioned between the film formation surface of the substrate accommodated in the chamber and the facing inner wall surface of the chamber, and configured to form an electric field in a direction extending from the film formation surface of the substrate accommodated in the chamber toward the facing inner wall surface of the chamber or in a direction extending from the facing inner wall surface of the chamber toward the film formation surface of the substrate.

Abstract: A surface-treating agent for a nitrided surface, including a fluorine-containing compound having a carbon-carbon unsaturated bond at its molecular terminal as a group of —Y-A wherein Y is a single bond, an oxygen atom or a divalent organic group, and A is —CH?CH2 or —C?CH. Also disclosed is an article treated with the surface-treating agent, a method for forming a surface-treating layer on a surface of a base material, a surface-treating layer forming apparatus, and a process for producing an article including a base material and a surface-treating layer coating a surface of the base material.

Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.

Abstract: In a preparation stage, an abnormality detection device detects a first characteristic amount from each first frame contained in video data and stores the first characteristic amount in a storage unit. In an abnormality detection stage, the abnormality detection device detects a second characteristic amount from each second frame contained in video data obtained by imaging a work operation of the robot and stores the first characteristic amount in the storage unit. The abnormality detection device compares the second characteristic mount of the second frame and the first characteristic amount of each of the first frames and specifies the first characteristic amount that is the closest to the second characteristic amount. The abnormality detection device determines whether the work operation of the robot in the abnormality detection stage is abnormal on the basis of the specified first characteristic amount and the second characteristic amount.

Abstract: The present invention provides a surface-treating agent comprising a fluorine-containing compound having a carbon-carbon unsaturated bond at its molecular terminal as a group of —Y-A wherein Y is a single bond, an oxygen atom or a divalent organic group, and A is —CH?CH2 or —C?CH, which is able to form a layer having higher alkaline resistance.

Abstract: There is provided a method for forming an organic monomolecular film on a surface of a workpiece with a network structure of Si and O formed in at least a portion of the surface. The method includes: performing a surface treatment on the workpiece such that the surface has a state where bonding sites of an organic monomolecular film material to be used exist at high density; and supplying the organic monomolecular film material to the workpiece subjected to the surface treatment and forming the organic monomolecular film on the surface of the workpiece.

Abstract: A processor divides each of a plurality of images in which an imaging target is captured under a plurality of different illumination conditions into a plurality of areas, to generate a plurality of divided areas. According to luminance information of a plurality of divided images corresponding to one area among the plurality of areas, the processor selects one divided image among the plurality of divided images corresponding to the one area. Further, the processor combines the one divided image with divided images corresponding to areas other than the one area, to generate an image corresponding to the plurality of areas.

Abstract: A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

Abstract: A method for forming an organic monolayer includes supplying to an object an organic material gas including organic molecules, each molecule having a binding site that is to be chemically bonded to a surface of the object. The method further includes supplying excited hydrogen to the organic material gas before the organic material gas reaches the object to substitute an end of the binding site with hydrogen, and forming an organic monolayer by reaction between the end substituted with the hydrogen and the object.

Abstract: An organic molecular film forming apparatus 100 of forming an organic molecular film on a processing target object includes a processing chamber 11 that accommodates therein the processing target object; an organic material gas supplying unit 2 that supplies an organic material gas into the processing chamber 11; and an ultraviolet ray irradiating unit 13 that irradiates ultraviolet ray to at least one of the processing target object, the organic material gas supplied to the processing target object, and a film formed on a surface of the processing target object. At least one of the surface of the processing target object and the organic molecular film formed thereon is activated by irradiating the ultraviolet ray from the ultraviolet ray irradiating unit 13 to at least one of the processing target object, the organic material gas supplied to the processing target object, and the film formed on the processing target object.

Abstract: A method for manufacturing an organic transistor includes laminating a base insulating layer on a substrate; forming source/drain electrodes on the base insulating layer; laminating an organic semiconductor layer to cover the electrodes and be in contact with the base insulating layer; laminating a gate insulating layer on the organic semiconductor layer; forming a gate electrode on the gate insulating layer; and performing, before the organic semiconductor layer is formed, surface treatment on the surface of the base insulating layer which is in contact with the organic semiconductor layer. The surface treatment is performed such that, when W1 represents the work of adhesion between two laminated layers using the same material of the organic semiconductor layer, the work of adhesion W2 between the base insulating layer and the organic semiconductor layer when the organic semiconductor layer is formed on the surface-treated base insulating layer satisfies the relationship W1?W2.

Abstract: An evaporating method is capable of forming a thin film on a substrate by a vapor deposition process. The evaporating method includes measuring a vapor concentration of a material gas discharged to the substrate by a detector; and controlling a film forming condition based on a measurement result from the detector.

Abstract: A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

Abstract: A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together.

Abstract: Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.

Abstract: A current density distribution characteristic within a beam pattern on a target object can be improved by using a simple-structured electron optical system and a single patterned beam-defining aperture. With an aperture layout modified to be physically fabricable, a current density distribution within the beam pattern is obtained (S5). Then, a current density uniformity is determined by applying preset determination threshold values to the current density distribution within the beam pattern BP obtained as described above (S6), and if it is found not to fall within a tolerance range, tentative inner block portions are set in tentative electron ray passing areas (S7 and S8). Subsequently, by appropriately iterating steps S5 to S8 for the aperture layout modified or renewed by the tentative inner block portions as described above, the tentative electron ray passing areas and the tentative inner block portions, satisfying determination criteria, are decided (S8).