Abstract: A method of manufacturing a photosensitive glass substrate, including: directly irradiating a plate-like base material composed of a photosensitive glass with an energy beam to form a latent image; crystallizing the latent image by a first heat treatment to obtain a crystallized portion; and dissolving and removing the crystallized portion and applying fine processing thereto, to obtain a photosensitive glass substrate, wherein in the irradiating, an irradiation position of the energy beam is corrected based on a dimensional variation of the photosensitive glass caused by a heat treatment including at least the first heat treatment.

Abstract: There is provided a silicate ceramics formed by crystallizing a silicate glass containing at least silicon oxide and lithium oxide, wherein a crystallinity of the silicate ceramics is 95% or more, and the silicate ceramics has a lithium disilicate crystal phase and ?-quartz crystal phase, and further, regarding the ratio of the lithium disilicate crystal phase and the ?-quartz crystal phase in the silicate ceramics, the lithium disilicate crystal phase has a larger weight ratio, and the silicate glass is preferably a photosensitive glass.

Abstract: There is provided a method of manufacturing a photosensitive glass molding, including: softening a solid-state photosensitive glass material by heating; and molding the softened photosensitive glass material to obtain a photosensitive glass molding, wherein in the heating, a crystal precipitated on the photosensitive glass material is melted by heating.

Abstract: A substrate assembly including a photosensitive etching glass substrate; and a first substrate and a second substrate for interposing both main surfaces of the photosensitive etching glass substrate between them. One of the main surfaces of the photosensitive etching glass substrate is thermally bonded to the first substrate, and the other main surface of the photosensitive etching glass substrate is bonded to the second substrate. When a thermal expansion coefficient of the photosensitive etching glass substrate is defined as C0, and a thermal expansion coefficient of the first substrate is defined as C1, and a thermal expansion coefficient of the second substrate is defined as C2, C1/C2 satisfies a relation of 0.7 or more and 1.3 or less, and at least one of a relation of C0/C1 satisfying less than 0.7 or larger than 1.3, and a relation of C0/C2 satisfying less than 0.7 or larger than 1.3 is satisfied.

Abstract: There is provided that a substrate comprising a glass substrate 2 constituted by a glass including a silicon oxide. The glass substrate has a through-hole 3 communicating with a front surface and a rear surface of the glass substrate, and filled with a metal material. The substrate is realized by forming an anchor part by selectively etching a silicon oxide on a sidewall surrounding an inside of said through-hole 3 before filling the metal material and by filling the inside of said through-hole 3 with the metal material after forming the anchor part.

Abstract: An electronic amplifying substrate, including: a glass base material having an insulating property; conductive layers formed on both main surfaces of the glass base material; and a plurality of through holes formed on a lamination body of the glass base material and the conductive layer, wherein an electric field is formed in the through hole by a potential difference between both conductive layers during application of a voltage to a surface of the conductive layer so that an electron avalanche amplification occurs in the through hole, and an insulation part is formed on at least one main surface of the glass base material, with one of the end portions of the insulation part formed to surround an opening part of the through hole of the glass base material, and the other end portion formed in contact with the end portions of the conductive layers.

Abstract: An underlayer is formed on a side wall 101a of a through hole 101 out of the side wall 101a of the through hole 101 and a substrate main surface, with a main surface having a low adhesion to a conductive layer disposed as an upper surface, and the conductive layer is formed on the substrate main surface and the side wall 101a of the through hole 101 on which the underlayer is formed, and the underlayer formed on the side wall 101a of the through hole 101 is selectively etched.

Abstract: There is provided a glass substrate for electronic amplification having through holes formed on a plate-like glass member and used for causing an electron avalanche in the through holes, wherein a shape of the glass substrate for electronic amplification and a material of the glass member are determined so that an insulation resistance in a plate thickness direction per plane of 100 cm2 is 107 to 1011?.

Abstract: An electronic multiplier porous glass plate used for a detector that measures ionized electrons by utilizing an electron avalanche multiplication in a gas is presented. The plate has a plurality of through holes provided on a plate-like member so as to be arranged two-dimensionally, wherein the plate-like member is formed by a photosensitive crystallized glass obtained by crystallizing a photosensitive glass, to realize a thinner glass plate and finer through holes.

Abstract: A substrate assembly including a photosensitive etching glass substrate; and a first substrate and a second substrate for interposing both main surfaces of the photosensitive etching glass substrate between them. One of the main surfaces of the photosensitive etching glass substrate is thermally bonded to the first substrate, and the other main surface of the photosensitive etching glass substrate is bonded to the second substrate. When a thermal expansion coefficient of the photosensitive etching glass substrate is defined as C0, and a thermal expansion coefficient of the first substrate is defined as C1, and a thermal expansion coefficient of the second substrate is defined as C2, C1/C2 satisfies a relation of 0.7 or more and 1.3 or less, and at least one of a relation of C0/C1 satisfying less than 0.7 or larger than 1.3, and a relation of C0/C2 satisfying less than 0.7 or larger than 1.3 is satisfied.

Abstract: An underlayer is formed on a side wall 101a of a through hole 101 out of the side wall 101a of the through hole 101 and a substrate main surface, with a main surface having a low adhesion to a conductive layer disposed as an upper surface, and the conductive layer is formed on the substrate main surface and the side wall 101a of the through hole 101 on which the underlayer is formed, and the underlayer formed on the side wall 101a of the through hole 101 is selectively etched.

Abstract: Manufacturing methods of a substrate and a wiring substrate include a step A of forming a primary plating layer on a lower side of a glass substrate having a through-hole; a step B of sealing a lower opening of the through-hole by forming a first layer on an upper side using electroplating; and a step C of filling the through-hole by depositing a second layer in the through-hole using electroplating from the upper side. In the step A, the primary plating layer is formed on from a lower opening edge to a partial sidewall surface of the through-hole. In the step B, the lower opening is sealed by growing the first layer from a primary plating layer surface inside the through-hole. In the step C, the through-hole is filled with plating metal by growing the second layer from a first layer surface inside the through-hole toward an upper opening.

Abstract: To improve thermal resistance of a double-sided wiring glass substrate. A through-hole is filled with a copper post composed of metallic copper to thereby electrically connect the front and rear surfaces of the double-sided wiring glass substrate. The filling with the copper post is performed by first sealing, with copper, one opening part of the through-hole using an electrolytic plating method and then further plating copper from the one sealed opening part to the other opening part. As a result, the front and rear surfaces of the double-sided wiring glass substrate can be surely electrically connected as well as high thermal resistance of the whole double-sided wiring glass substrate can be secured.

Abstract: To improve thermal resistance of a double-sided wiring glass substrate. A through-hole is filled with a copper film layer composed of metallic copper for electrically connecting the front and rear surfaces of the double-sided wiring glass substrate. The copper film layer is formed by first forming an electroless plating copper layer and then forming an electrolytic plating copper layer on a sidewall of the through-hole. As a result, the front and rear surfaces of the double-sided wiring glass substrate can be surely electrically connected as well as high thermal resistance of the whole double-sided wiring glass substrate can be secured.

Abstract: A multilayer printed wiring board which permits the formation of fine wiring patterns, thereby increasing the density of wiring patterns. Using photosensitive glass having a coefficient of thermal expansion close to that of a copper film as a core substrate, a through hole is formed in the photosensitive glass by photolithography, a sputtering silicon oxide layer and a sputtering silicon nitride layer are formed to prevent leak of alkali metal ions from the photosensitive glass, a sputtering chromium layer, a sputtering chromium-copper layer and a sputtering copper layer are formed to enhance the adhesion strength between the copper film and the sputtering silicon oxide layer, and a copper film of 1 to 20 ?m thick is formed. With resin filled into the interior of the through hole, a wiring layer is patterned by etching, an insulating layer is formed, and the surface is covered with a surface treatment layer and a cover coat.

Abstract: To improve thermal resistance of a double-sided wiring glass substrate. A through-hole is filled with a copper film layer composed of metallic copper for electrically connecting the front and rear surfaces of the double-sided wiring glass substrate. The copper film layer is formed by first forming an electroless plating copper layer and then forming an electrolytic plating copper layer on a sidewall of the through-hole. As a result, the front and rear surfaces of the double-sided wiring glass substrate can be surely electrically connected as well as high thermal resistance of the whole double-sided wiring glass substrate can be secured.

Abstract: To improve thermal resistance of a double-sided wiring glass substrate. A through-hole is filled with a copper post composed of metallic copper to thereby electrically connect the front and rear surfaces of the double-sided wiring glass substrate. The filling with the copper post is performed by first sealing, with copper, one opening part of the through-hole using an electrolytic plating method and then further plating copper from the one sealed opening part to the other opening part. As a result, the front and rear surfaces of the double-sided wiring glass substrate can be surely electrically connected as well as high thermal resistance of the whole double-sided wiring glass substrate can be secured.

Abstract: A multilayer printed wiring board which permits the formation of fine wiring patterns, thereby increasing the density of wiring patterns. Using photosensitive glass having a coefficient of thermal expansion close to that of a copper film as a core substrate, a through hole is formed in the photosensitive glass by photolithography, a sputtering silicon oxide layer and a sputtering silicon nitride layer are formed to prevent leak of alkali metal ions from the photosensitive glass, a sputtering chromium layer, a sputtering chromium-copper layer and a sputtering copper layer are formed to enhance the adhesion strength between the copper film and the sputtering silicon oxide layer, and a copper film of 1 to 20 ?m thick is formed. With resin filled into the interior of the through hole, a wiring layer is patterned by etching, an insulating layer is formed, and the surface is covered with a surface treatment layer and a cover coat.

Abstract: A multilayer printed wiring board which permits the formation of fine wiring patterns, thereby increasing the density of wiring patterns. Using photosensitive glass having a coefficient of thermal expansion close to that of a copper film as a core substrate, a through hole is formed in the photosensitive glass by photolithography, a sputtering silicon oxide layer and a sputtering silicon nitride layer are formed to prevent leak of alkali metal ions from the photosensitive glass, a sputtering chromium layer, a sputtering chromium-copper layer and a sputtering copper layer are formed to enhance the adhesion strength between the copper film and the sputtering silicon oxide layer, and a copper film of 1 to 20 ?m thick is formed. With resin filled into the interior of the through hole, a wiring layer is patterned by etching, an insulating layer is formed, and the surface is covered with a surface treatment layer and a cover coat.

Abstract: A multilayer printed wiring board which permits the formation of fine wiring patterns, thereby increasing the density of wiring patterns. Using photosensitive glass having a coefficient of thermal expansion close to that of a copper film as a core substrate, a through hole is formed in the photosensitive glass by photolithography, a sputtering silicon oxide layer and a sputtering silicon nitride layer are formed to prevent leak of alkali metal ions from the photosensitive glass, a sputtering chromium layer, a sputtering chromium-copper layer and a sputtering copper layer are formed to enhance the adhesion strength between the copper film and the sputtering silicon oxide layer, and a copper film of 1 to 20 &mgr;m thick is formed. With resin filled into the interior of the through hole, a wiring layer is patterned by etching, an insulating layer is formed, and the surface is covered with a surface treatment layer and a cover coat.