Patents by Inventor Takashi Fuyuki

Takashi Fuyuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8698083
    Abstract: A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: April 15, 2014
    Assignee: National University Corporation Nara Institute of Science and Technology
    Inventors: Takashi Fuyuki, Ayumi Tani
  • Patent number: 8598017
    Abstract: The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are arranged at intervals in a width direction are formed on a surface of the fiber 1.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: December 3, 2013
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Takashi Fuyuki, Kenkichi Suzuki, Sadayuki Toda, Hisashi Koaizawa
  • Publication number: 20130023090
    Abstract: The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are arranged at intervals in a width direction are formed on a surface of the fiber 1.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 24, 2013
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventors: Takashi FUYUKI, Kenkichi Suzuki, Sadayuki Toda, Hisashi Koaizawa
  • Publication number: 20120126120
    Abstract: A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.
    Type: Application
    Filed: August 3, 2010
    Publication date: May 24, 2012
    Inventors: Takashi Fuyuki, Ayumi Tani
  • Patent number: 7901978
    Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: March 8, 2011
    Assignee: National University Corporation Nara Institute of Science and Technology
    Inventors: Yukiharu Uraoka, Takashi Fuyuki, Hiroya Kirimura
  • Patent number: 7847237
    Abstract: A method for evaluating performance of a solar cell, comprising: a current passing step (S1) of passing, in a forward direction, a direct current with respect to a solar cell element constituting the solar cell; a temperature control step (S2) of heating the solar cell element and controlling a heating temperature of the solar cell element; and a light emission detecting step (S3) of detecting light emission characteristics of light generated from the solar cell element due to the passing of the direct current in the current passing step and the heating of the solar cell element in the temperature control step (S2).
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: December 7, 2010
    Assignees: National University Corporation Nara
    Inventor: Takashi Fuyuki
  • Patent number: 7601941
    Abstract: Disclosed is a method for evaluating the performance of a solar cell which comprises a silicon semiconductor as the main component. This method comprises a current introduction step for introducing a direct current into a solar cell element constituting the solar cell in the forward direction, and an emission sensing step for sensing emission characteristics of the light emitted from the solar cell element due to the current introduction step. By this method, the photoelectric conversion performance of a solar cell can be simply and accurately evaluated without requiring large-sized equipment.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: October 13, 2009
    Assignee: National University Corporation Nara Institute of Science and Technology
    Inventor: Takashi Fuyuki
  • Publication number: 20090127448
    Abstract: A method for evaluating performance of a solar cell, comprising: a current passing step (S1) of passing, in a forward direction, a direct current with respect to a solar cell element constituting the solar cell; a temperature control step (S2) of heating the solar cell element and controlling a heating temperature of the solar cell element; and a light emission detecting step (S3) of detecting light emission characteristics of light generated from the solar cell element due to the passing of the direct current in the current passing step and the heating of the solar cell element in the temperature control step (S2).
    Type: Application
    Filed: April 25, 2007
    Publication date: May 21, 2009
    Inventor: Takashi Fuyuki
  • Publication number: 20090050880
    Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
    Type: Application
    Filed: March 28, 2006
    Publication date: February 26, 2009
    Applicant: National University Corporation Nara Institute of Science and Technology
    Inventors: Yukiharu Uraoka, Takashi Fuyuki, Hiroya Kirimura
  • Publication number: 20090001501
    Abstract: The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are a ranged at intervals in a width direction are formed on a surface of the fiber 1.
    Type: Application
    Filed: October 27, 2005
    Publication date: January 1, 2009
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventors: Takashi Fuyuki, Kenkichi Suzuki, Sadayuki Toda, Hisashi Koaizawa
  • Publication number: 20080088829
    Abstract: Disclosed is a method for evaluating the performance of a solar cell which comprises a silicon semiconductor as the main component. This method comprises a current introduction step for introducing a direct current into a solar cell element constituting the solar cell in the forward direction, and an emission sensing step for sensing emission characteristics of the light emitted from the solar cell element due to the current introduction step. By this method, the photoelectric conversion performance of a solar cell can be simply and accurately evaluated without requiring large-sized equipment.
    Type: Application
    Filed: November 29, 2005
    Publication date: April 17, 2008
    Inventor: Takashi Fuyuki