Abstract: A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W3 is a width of the oxidized region of the third part.

Abstract: A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W3 is a width of the oxidized region of the third part.

Abstract: An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, and a second temperature control element. The semiconductor laser includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer, the second mirror layer, and a heat transfer member disposed on the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.

Abstract: An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, a heat transfer member, and a second temperature control element. The laser includes a resonator and an insulation layer disposed around the resonator. The resonator includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer and the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The heat transfer member is disposed in the insulation layer. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.

Abstract: An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, and a second temperature control element. The semiconductor laser includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer, the second mirror layer, and a heat transfer member disposed on the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.

Abstract: An atomic oscillator includes a semiconductor laser, an atomic cell, a light receiving element, a first temperature control element, a heat transfer member, and a second temperature control element. The semiconductor laser includes a resonator and an insulation layer disposed around the resonator. The resonator includes a first mirror layer, a second mirror layer, and an active layer disposed between the first mirror layer and the second mirror layer. The atomic cell is irradiated with light emitted from the semiconductor laser. In the atomic cell, an alkali metal atom is accommodated. The light receiving element detects intensity of light transmitted through the atomic cell and outputs a detection signal. The first temperature control element controls a temperature of the semiconductor laser. The heat transfer member is disposed in the insulation layer. The second temperature control element is controlled based on the detection signal and is connected to the heat transfer member.

Abstract: Examples of a substrate transporting system include a substrate transporting robot, a module that houses the substrate transporting robot therein and has an EFEM door, a load port for placing a FOUP having a FOUP door thereon, and a controller for opening the EFEM door while the FOUP door is closed when the FOUP is located at a dock position of the load port.

Abstract: A surface emitting laser includes a substrate, a stacked structure provided on the substrate and including a resonator and a first distortion applier connected to the resonator and applying distortion to the active layer, and a second distortion applier provided on the substrate and applying distortion to the active layer. As seen from a stacking direction, the first distortion applier has a first portion and a second portion provided with the resonator in between, as seen from the stacking direction, a longitudinal direction of the second distortion applier and a longitudinal direction of the first distortion applier are the same direction, and a magnitude relationship of a linear expansion coefficient of the second distortion applier to a linear expansion coefficient of the substrate is the same as a magnitude relationship of a linear expansion coefficient of the first distortion applier to the linear expansion coefficient of the substrate.

Abstract: A surface emitting laser includes a substrate, a stacked structure provided on the substrate and including a resonator and a first distortion applier connected to the resonator and applying distortion to the active layer, and a second distortion applier provided on the substrate and applying distortion to the active layer. As seen from a stacking direction, the first distortion applier has a first portion and a second portion provided with the resonator in between, as seen from the stacking direction, a longitudinal direction of the second distortion applier and a longitudinal direction of the first distortion applier are the same direction, and a magnitude relationship of a linear expansion coefficient of the second distortion applier to a linear expansion coefficient of the substrate is the same as a magnitude relationship of a linear expansion coefficient of the first distortion applier to the linear expansion coefficient of the substrate.

Abstract: A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

Abstract: A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

Abstract: A cluster type semiconductor processing apparatus includes a wafer handling chamber having a polygonal base including multiple sides for wafer processing chambers and two adjacent sides for wafer loading/unloading chambers as viewed in a direction of an axis of the wafer handling chamber. An angle A between two adjacent sides of the multiple sides for wafer processing chambers is greater than an angle B which is calculated by dividing 360° by the number of the total sides consisting of the multiple sides for wafer processing chambers and the two adjacent sides for wafer loading/unloading chambers.

Abstract: A cluster type semiconductor processing apparatus includes a wafer handling chamber having a polygonal base including multiple sides for wafer processing chambers and two adjacent sides for wafer loading/unloading chambers as viewed in a direction of an axis of the wafer handling chamber. An angle A between two adjacent sides of the multiple sides for wafer processing chambers is greater than an angle B which is calculated by dividing 360° by the number of the total sides consisting of the multiple sides for wafer processing chambers and the two adjacent sides for wafer loading/unloading chambers.