Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.

Abstract: A bonnet inner panel includes a central protrusion portion protruding upward in a vehicle elevational view and a rear protrusion portion located in back of the central protrusion portion, which are arranged side by side in a vehicle longitudinal direction, a deep-drawn groove is provided between the both protrusion portions to extend in a vehicle width direction, and a hinge reinforcement is provided to extend from a position beside the rear protrusion portion to a position at a rear end of the central protrusion portion, passing through beside the deep-drawn groove. Thereby, the hinge support rigidity of the rear portion of the bonnet having the central protrusion portion can be increased, so that occurrence of any improper deflection or vibration caused to the bonnet by the traveling vibration, the traveling-air pressure or the like can be prevented.

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

Abstract: An imaging device connectable via a connector to a flash control device which is connectable via the connecting section and which has a memory storing information on whether or not to incorporate a flash function, the imaging device comprising: a controller which communicates with the flash control device connected to the connector, and controls the flash control device, wherein the controller communicates with the flash control device to determine the information, and switches control of the flash control device according to a determination result.

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

Abstract: Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.

Abstract: A reinforcement is configured to have a corner portion corresponding to a corner portion of a side sill inner. Herein, the corner portion of the reinforcement forms a reinforcement ridgeline extending in a vehicle longitudinal direction. The reinforcement is provided such that the reinforcement ridgeline and a side-sill-inner upper ridgeline formed at a corner portion of the side sill inner overlap with each other over a range from a specified area where a wheel outward displaced in a vehicle collision is capable of contacting a side sill to a connection portion where a cross member connects to the side sill inner.

Abstract: An image providing apparatus includes: a plurality of auxiliary imaging units that have shooting ranges partially overlapping one another, and each of which images a subject to generate auxiliary image data; a provider communication unit; a provider communication control unit that receives, from the portable device, via the provider communication unit, transmission request information requesting the image providing apparatus to transmit composite image data; and an image synthesizing unit that generates, based on the transmission request information, composite image data by combining the auxiliary image data respectively generated by two or more of the plurality of auxiliary imaging units. The provider communication control unit transmits, via the provider communication unit, the composite image data to the portable device.

Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.

Abstract: A vehicle-body structure of an automotive vehicle comprises a frame which is provided at a side portion of a vehicle body to extend in a vehicle longitudinal direction, and a load absorption portion which is provided at a front face of a tip portion of the frame to protrude forward, wherein the load absorption portion includes an inclination face portion which protrudes outward, in a vehicle width direction, relative to the frame and a tip face of which extends obliquely forward and inward.

Abstract: There are provided a hinge pillar comprising an outer panel and an inner panel which form a closed cross section extending vertically, a hinge pillar reinforcement provided in the closed cross section, a front door attached to the hinge pillar via a pair of upper-and-lower door hinges, and a hinge bracket attaching the lower door hinge to the hinge pillar reinforcement, the hinge bracket being provided to face a front wheel in a longitudinal direction. Herein, the hinge bracket has a lower strength than a portion of the hinge pillar reinforcement where the hinge bracket is provided. Accordingly, when receiving a collision load from the front wheel, the hinge bracket changes a contact portion of the front wheel to the hinge pillar so as to guide the retreating front wheel outward in a vehicle width direction.

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

Abstract: A weld bead shaping apparatus including: a gouging torch for gouging an object to be shaped; a shape sensor for measuring a shape of the object; a slider apparatus and an articulated robot for driving the gouging torch and shape sensor; an image processing apparatus; and a robot controlling apparatus. The image processing apparatus includes: a shape data extracting unit extracting shape data of the object, from a measurement result obtained by the shape sensor; and a weld reinforcement shape extracting/removal depth calculating unit calculating a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object, and calculating a removal depth by which gouging is performed, based on the weld reinforcement shape. The robot controlling apparatus controls the slider apparatus, the articulated robot, and the gouging torch based on the weld reinforcement shape and the removal depth.