Patents by Inventor Takashi Hamamatu

Takashi Hamamatu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4832771
    Abstract: A complex-shaped bonded body of silicon nitride having a high bonding strength of more than 30 kg/mm.sup.2 as flexural strength and continuously homogenous microstructure through the bonded portion can be obtained by the method comprising the following five steps:(a) molding a body from a mixture of silicon powder having a diameter of less than 44 .mu.m and non-oxide ceramics powder having a diameter of less than 44 .mu.m,(b) heating a molded body obtained by step (a) at a temperature of 600 to 1500.degree. C. in a non-oxide atmosphere such as nitrogen or argon gas to sinter said silicon powder and partially convert to silicon nitride retaining 60 to 100 wt. % unreacted silicon powder therein,(c) grinding a surface to be bonded together with other bodies of said presintered body obtained by step (b) to dispose of unreacted silicon thereon,(d) placing a bonding agent containing silicon powder having a diameter of less than 44 .mu.
    Type: Grant
    Filed: March 28, 1988
    Date of Patent: May 23, 1989
    Assignee: Kurosaki Refractories Co., Ltd.
    Inventors: Takashi Hamamatu, Nobuhiro Sato, Haruyuki Ueno
  • Patent number: 4832888
    Abstract: A shaped body of silicon nitride enjoying high density, ample shrinkage, and outstanding mechanical strength is produced in a desired pattern by a method of preparing a shaped body comprising Si particles and a compound capable of remaining as SiC or C in the form of film on the surface of the Si particles in a non-oxidative atmosphere at a temperature in the range of 900.degree. to 1,400.degree. C., subjecting the shaped body to sintering and shrinkage of not less than 1% in an atmosphere of inert gas at a temperature exceeding 900.degree. C., and not exceeding the softening point of Si, and subsequently subjecting the resultant sintered shaped body to nitriding in a nitriding atmosphere at a pressure exceeding atmospheric pressure and at a temperature in the range of 1,200.degree. to 1,500.degree. C.
    Type: Grant
    Filed: August 20, 1987
    Date of Patent: May 23, 1989
    Assignee: Kurosaki Refractories Co., Ltd.
    Inventors: Nobuhiro Sato, Haruyuki Ueno, Yuji Katsura, Takashi Hamamatu
  • Patent number: 4467042
    Abstract: Flaky .beta.-SiC mainly composed of .beta.-SiC which is obtained from an organic silicon polymer containing the carbon and silicon atoms as the major skeletal component and the method for producing such flaky .beta.-SiC are disclosed. Such .beta.-SiC is especially utilized as the starting material for ceramics having a laminar structure as well as for the refractories. The ceramics and refractories provided with such .beta.-SiC have excellent resistance to thermal shock, to thermal fatigue as well as to oxidation.
    Type: Grant
    Filed: January 27, 1982
    Date of Patent: August 21, 1984
    Assignee: Kurosaki Refractories Co., Ltd.
    Inventors: Tokuaki Hatta, Haruyuki Ueno, Yuji Katsura, Kazushige Fukuda, Hiroshi Kubota, Takashi Hamamatu
  • Patent number: 4465647
    Abstract: Flaky .beta.-SiC mainly composed of .beta.-SiC which is obtained from an organic silicon polymer containing the carbon and silicon atoms as the major skeletal component and the method for producing such flaky .beta.-SiC are disclosed. Such .beta.-SiC is especially utilized as the starting material for ceramics having a laminar structure as well as for the refractories. The ceramics and refractories provided with such .beta.-SiC have excellent resistance to thermal shock, to thermal fatigue as well as to oxidation.
    Type: Grant
    Filed: January 27, 1982
    Date of Patent: August 14, 1984
    Assignee: Kurosaki Refractories Co., Ltd.
    Inventors: Tokuaki Hatta, Haruyuki Ueno, Yuji Katsura, Kazushige Fukuda, Hiroshi Kubota, Takashi Hamamatu
  • Patent number: 4387080
    Abstract: Flaky .beta.-SiC mainly composed of .beta.-SiC which is obtained from an organic silicon polymer containing the carbon and silicon atoms as the major skeletal component and the method for producing such flaky .beta.-SiC are disclosed. Such .beta.-SiC is especially utilized as the starting material for ceramics having a laminar structure as well as for the refractories. The ceramics and refractories provided with such .beta.-SiC have excellent resistance to thermal shock, to thermal fatigue as well as to oxidation.
    Type: Grant
    Filed: January 30, 1981
    Date of Patent: June 7, 1983
    Assignee: Kurosaki Refractories Co., Ltd.
    Inventors: Tokuaki Hatta, Haruyuki Ueno, Yuji Katsura, Kazushige Fukuda, Hiroshi Kubota, Takashi Hamamatu