Patents by Inventor Takashi Haramaki
Takashi Haramaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7141741Abstract: A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.Type: GrantFiled: September 22, 2003Date of Patent: November 28, 2006Assignees: Hitachi, Ltd., Hitachi Haramachi Electronics Co., Ltd.Inventors: Kazuji Yamada, Akira Tanaka, Ryuichi Saito, Yasutoshi Kurihara, Tadao Kushima, Takashi Haramaki, Yoshihiko Koike, Takashi Hosokawa, Mamoru Sawahata, Masahiro Koizumi, Jin Onuki, Kazuhiro Suzuki, Isao Kobayashi, Hideo Shimizu, Yutaka Higashimura, Shigeki Sekine, Nobuya Koike, Hideya Kokubun
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Publication number: 20040056349Abstract: A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.Type: ApplicationFiled: September 22, 2003Publication date: March 25, 2004Inventors: Kazuji Yamada, Akira Tanaka, Ryuichi Saito, Yasutoshi Kurihara, Tadao Kushima, Takashi Haramaki, Yoshihiko Koike, Takashi Hosokawa, Mamoru Sawahata, Masahiro Koizumi, Jin Onuki, Kazuhiro Suzuki, Isao Kobayashi, Hideo Shimizu, Yutaka Higashimura, Shigeki Sekine, Nobuya Koike, Hideya Kokubun
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Publication number: 20030016502Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements beingType: ApplicationFiled: March 20, 2002Publication date: January 23, 2003Inventors: Kazuji Yamada, Akira Tanaka, Ryuichi Saito, Yasutoshi Kurihara, Tadao Kushima, Takashi Haramaki, Yoshihiko Koike, Takashi Hosokawa, Mamoru Sawahata, Masahiro Koizumi, Jin Onuki, Kazuhiro Suzuki, Isao Kobayashi, Hideo Shimizu, Yutaka Higashimura, Shigeki Sekine, Nobuya Koike, Hideya Kokubun
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Patent number: 6452101Abstract: An object of the invention is to provide a multi-core conductive wire having the small number of manufacturing processes and a terminal with high strength, and a method of manufacturing the multi-core conductive wire. The multi-core conductive wire is provided with a terminal, at the end portion thereof, where individual strands of the multi-core conductive wire are entangled with each other and the terminal is molded by subjecting to pressure-molding. A method of manufacturing a multi-core conductive wire comprises a step of processing the multi-core conductive wire into a state where individual strands of the multi-core conductive wire are partially entangled with each other; a step of temporarily molding the processed portion; and a step of further applying pressure to the temporarily molded portion for pressure-molding or plastic working.Type: GrantFiled: February 4, 2000Date of Patent: September 17, 2002Assignee: Hitachi, Ltd.Inventors: Takashi Haramaki, Izumi Sakurai, Yoshitaka Kojima
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Patent number: 6434008Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements beingType: GrantFiled: August 27, 1998Date of Patent: August 13, 2002Assignees: Hitachi, Ltd., Hitachi Haramachi Electronics Co., Ltd.Inventors: Kazuji Yamada, Akira Tanaka, Ryuichi Saito, Yasutoshi Kurihara, Tadao Kushima, Takashi Haramaki, Yoshihiko Koike, Takashi Hosokawa, Mamoru Sawahata, Masahiro Koizumi, Jin Onuki, Kazuhiro Suzuki, Isao Kobayashi, Hideo Shimizu, Yutaka Higashimura, Shigeki Sekine, Nobuya Koike, Hideya Kokubun
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Patent number: 5956231Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements beingType: GrantFiled: October 4, 1995Date of Patent: September 21, 1999Assignees: Hitachi, Ltd., Hitachi Haramachi Electronics Co., Ltd.Inventors: Kazuji Yamada, Akira Tanaka, Ryuichi Saito, Yasutoshi Kurihara, Tadao Kushima, Takashi Haramaki, Yoshihiko Koike, Takashi Hosokawa, Mamoru Sawahata, Masahiro Koizumi, Jin Onuki, Kazuhiro Suzuki, Isao Kobayashi, Hideo Shimizu, Yutaka Higashimura, Shigeki Sekine, Nobuya Koike, Hideya Kokubun
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Patent number: 5231366Abstract: A superconducting magnetic field generating apparatus, and coil, a superconducting wire, a method of producing a coil and a method of connecting a superconducting wire which are suitable for such a superconducting magnetic field generating apparatus are disclosed. The superconducting magnetic field generating apparatus has a coil of a wound superconducting wire which is composed of superconducting wires with the end portions thereof connected with each other. Each of the superconducting wires is composed of a plurality of superconducting material wires embedded in a stabilizing member. The group of superconducting material wires is embedded at the connecting portion in a state in which the superconducting material wires are densely gathered to the central portion of the stabilizing member and the superconducting material wires are directly in contact with each other.Type: GrantFiled: March 4, 1991Date of Patent: July 27, 1993Assignee: Hitachi, Ltd.Inventors: Takashi Haramaki, Mituo Nakamura, Takao Funamoto, Masahiko Sakamoto, Teruhiro Takizawa, Takeshi Yamagiwa
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Patent number: 4902867Abstract: A high heat resisting wire (5) is made of amide-imide-coated wire, and a conductive terminal (4) is made of Cu or Cu alloy such as brass P-containing solder, BAg-1, BAg-2 are used as joining assistant (4). A high heat resisting wire (5) is made of an amide-imide-coated wire and a conductive terminal (3) is made of soft steel or SUS steel, a silver-solder is used as joining assistant (4). A metallic joining conductive layer (8) is formed between a Cu core wire (7) of the insulated wire (5) and the conductive terminal (3 ) with the joining assistant (4). The insulated wire (5) is joined to the conductive terminal (3) and a joined body having high joining strength can be obtained.Type: GrantFiled: October 6, 1988Date of Patent: February 20, 1990Assignee: Hitachi, Ltd.Inventors: Takashi Haramaki, Mitsuo Nakamura, Satoshi Kokura, Takao Funamoto, Katsuyoshi Terakado
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Patent number: 4691856Abstract: Disclosed is a diffusion bonding method which can be applied to superalloys and comprises forming in advance an alloy layer containing an additional element or elements having a higher diffusion speed than that of the principal constituent element of a base metal and a lower melting point than that of the base metal on the joint surface of the base metal consisting of a heat-resistant superalloy based on Co, Ni, Fe, Ti or the like, and bringing the joint surfaces into contact so as to diffuse B.Type: GrantFiled: June 28, 1985Date of Patent: September 8, 1987Assignee: Hitachi, Ltd.Inventors: Takashi Haramaki, Takao Funamoto, Satoshi Kokura, Masahisa Inagaki, Ryutaro Jimbou, Toshimi Sasaki, Kousei Nagayama
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Patent number: 4645119Abstract: A heat exchanger and a method of manufacturing a heat exchanger by brazing metal members mainly made of Al or Al alloy is disclosed. The heat exchanger has a plurality of brazed metal members, at least one of the brazed metal members being made of brazing sheet clad with a brazing material. The brazed portions of the metal members or the whole surface of the heat exchanger are coated with a corrosion-resistant fluoride flux consisting essentially of 25-40% KF, 38-54% AlF3 and 3-30% ZnF2 by weight which forms a corrosion-inhibiting metallic film.Type: GrantFiled: July 5, 1984Date of Patent: February 24, 1987Assignee: Hitachi, Ltd.Inventors: Takashi Haramaki, Katsuhiko Shiota, Satoshi Kokura, Takao Funamoto, Akira Tomita