Patents by Inventor Takashi Hatanai
Takashi Hatanai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170222260Abstract: A solid electrolyte powder includes ion-conductive LATP powder that is obtained by heating and melting raw materials at a predetermined temperature to prepare molten LATP mixture, cooling the molten LATP mixture to prepare a crystalline material having a NASICON structure, crushing the crystalline material to prepare crystal powder having a particle size of 1 ?m to 10 ?m, and performing a heat treatment on the crystal powder in air at a temperature of 800° C. to 1000° C. for a predetermined period of time.Type: ApplicationFiled: April 19, 2017Publication date: August 3, 2017Inventors: Takashi HATANAI, Akio HANADA, Shunetsu SATO, Shin KINOUCHI, Mika SASAKI
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Patent number: 7859258Abstract: Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length L1 is formed to be longer than an element width W1. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size W2 and a length size L2 are arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size L2 is longer than the element length L1, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.Type: GrantFiled: June 22, 2010Date of Patent: December 28, 2010Assignee: Alps Electric Co., Ltd.Inventors: Hiromitsu Sasaki, Hirofumi Fukui, Takashi Hatanai
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Publication number: 20100259257Abstract: Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length L1 is formed to be longer than an element width W1. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size W2 and a length size L2 are arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size L2 is longer than the element length L1, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiromitsu Sasaki, Hirofumi Fukui, Takashi Hatanai
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Patent number: 7535096Abstract: A glass substrate has a pair of main surfaces opposite to each other. Two island-shaped portions made of silicon are buried in the glass substrate. The two island-shaped portions are exposed from the two main surfaces of the glass substrate, respectively. An electrode is formed on one main surface of the glass substrate so as to be electrically connected to one exposed portion of one island-shaped portion, and another electrode is formed thereon so as to be electrically connected to one exposed portion of the other island-shaped portion. Still another electrode is formed on the other main surface of the glass substrate so as to be electrically connected to the other exposed portion of the one island-shaped portion. A silicon substrate having a pressure sensing diaphragm is bonded to the other main surface of the glass substrate.Type: GrantFiled: June 27, 2005Date of Patent: May 19, 2009Assignee: Alps Electric Co., Ltd.Inventors: Manabu Tamura, Takashi Hatanai, Kazuhiro Soejima, Koichi Takahashi, Munemitsu Abe, Shinji Murata
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Publication number: 20070264742Abstract: A glass substrate has a pair of main surfaces opposite to each other. Two island-shaped portions made of silicon are buried in the glass substrate. The tow island-shaped portions are exposed from the two main surfaces of the glass substrate, respectively. An electrode is formed on one main surface of the glass substrate so as to be electrically connected to one exposed portion of one island-shaped portion, and another electrode is formed thereon so as to be electrically connected to one exposed portion of the other island-shaped portion. Still another electrode is formed on the other main surface of the glass substrate so as to be electrically connected to the other exposed portion of the one island-shaped portion. A silicon substrate having a pressure sensing diaphragm is bonded to the other main surface of the glass substrate.Type: ApplicationFiled: July 19, 2007Publication date: November 15, 2007Inventors: Manabu Tamura, Takashi Hatanai, Kazuhiro Soejima, Koichi Takahashi, Munemitsu Abe, Shinji Murata
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Publication number: 20060001128Abstract: A glass substrate has a pair of main surfaces opposite to each other. Two island-shaped portions made of silicon are buried in the glass substrate. The tow island-shaped portions are exposed from the two main surfaces of the glass substrate, respectively. An electrode is formed on one main surface of the glass substrate so as to be electrically connected to one exposed portion of one island-shaped portion, and another electrode is formed thereon so as to be electrically connected to one exposed portion of the other island-shaped portion. Still another electrode is formed on the other main surface of the glass substrate so as to be electrically connected to the other exposed portion of the one island-shaped portion. A silicon substrate having a pressure sensing diaphragm is bonded to the other main surface of the glass substrate.Type: ApplicationFiled: June 27, 2005Publication date: January 5, 2006Inventors: Manabu Tamura, Takashi Hatanai, Kazuhiro Soejima, Koichi Takahashi, Munemitsu Abe, Shinji Murata
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Publication number: 20040207921Abstract: A multilayer film optical filter includes a multilayer film including a plurality of dielectric material thin films repeatedly laminated on a substrate and having different refractive indexes. The multilayer film optical filter further includes a relaxation layer composed of a single material, having a thickness in the range of 1 to 10 &mgr;m, and provided below the multilayer film near the substrate, for relaxing the influence of an error in thickness measurement due to a temperature rise of the substrate in an initial stage of deposition.Type: ApplicationFiled: May 12, 2004Publication date: October 21, 2004Applicant: ALPS Electric Co., Ltd.Inventors: Hitoshi Kitagawa, Takashi Hatanai, Yuichi Umeda, Shigefumi Sakai
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Patent number: 6692582Abstract: A hard magnetic alloy in accordance with the present invention is composed of at least element T selected from the group consisting of Fe, Co and Ni, at least one rare earth element R, and boron (B). The hard magnetic alloy has an absolute value of the temperature coefficient of magnetization of 0.15%/° C. or less and a coercive force of 1 kOe, when being used in a shape causing a permeance factor of 2 or more. A hard magnetic alloy compact in accordance with the present invention has a texture, in which at least a part or all of the texture comprises an amorphous phase or fine crystalline phase having an average crystal grain size of 100 nm or less, is subjected to crystallization or grain growth under stress, such that a mixed phase composed of a soft magnetic or semi-hard magnetic phase and a hard magnetic phase is formed in the texture, and anisotropy is imparted to the crystal axis of the hard magnetic phase.Type: GrantFiled: October 26, 2000Date of Patent: February 17, 2004Assignee: Alps Electric Co., Ltd.Inventors: Akinori Kojima, Akihiro Makino, Takashi Hatanai, Yutaka Yamamoto, Akihisa Inoue
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Patent number: 6657829Abstract: A tunneling magnetoresistive device comprises an insulating barrier layer, and at least two ferromagnetic layers provided on the same plane of the layer. The insulating barrier layer can be initially formed, so that when a metal layer is oxidized to form the insulating barrier layer, it is unnecessary to pay care to the influence of oxidation on the ferromagnetic layers. The insulating barrier layer can be formed in large thickness, thereby suppressing defects, such as pinholes, from occurring. Thus, a tunneling magnetoresistive device having good characteristics can be manufactured.Type: GrantFiled: January 31, 2001Date of Patent: December 2, 2003Assignee: Alps Electric Co., Ltd.Inventors: Makoto Nakazawa, Takashi hatanai
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Publication number: 20030142407Abstract: A multilayer film optical filter includes a multilayer film including a plurality of dielectric material thin films repeatedly laminated on a substrate and having different refractive indexes. The multilayer film optical filter further includes a relaxation layer composed of a single material, having a thickness in the range of 1 to 10 &mgr;m, and provided below the multilayer film near the substrate, for relaxing the influence of an error in thickness measurement due to a temperature rise of the substrate in an initial stage of deposition.Type: ApplicationFiled: January 17, 2003Publication date: July 31, 2003Applicant: ALPS ELECTRIC CO., LTD.Inventors: Hitoshi Kitagawa, Takashi Hatanai, Yuichi Umeda, Shigefumi Sakai
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Publication number: 20020163764Abstract: A tunneling magnetoresistive device comprises an insulating barrier layer, and at least two ferromagnetic layers provided on the same plane of the layer. The insulating barrier layer can be initially formed, so that when a metal layer is oxidized to form the insulating barrier layer, it is unnecessary to pay care to the influence of oxidation on the ferromagnetic layers. The insulating barrier layer can be formed in large thickness, thereby suppressing defects, such as pinholes, from occurring. Thus, a tunneling magnetoresistive device having good characteristics can be manufactured.Type: ApplicationFiled: January 31, 2001Publication date: November 7, 2002Applicant: Alps Electric Co., Ltd.Inventors: Makoto Nakazawa, Takashi Hatanai
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Patent number: 6452382Abstract: The encoder of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers each facing the same direction in parallel, a magnetic coding member is rotatably supported to face the giant magnetoresistive effect elements on the substrate, and the magnetic coding member has a plurality of magnetic poles formed along the direction of rotation of itself.Type: GrantFiled: July 12, 1999Date of Patent: September 17, 2002Assignee: Alps Electric Co., Ltd.Inventors: Ichirou Tokunaga, Seiji Kikuchi, Yoshito Sasaki, Takashi Hatanai
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Patent number: 6446702Abstract: An apparatus for producing a metallic ribbon includes a cooling roll, a melt nozzle, and an air-cutoff unit provided to cover at least a portion of the periphery of the cooling roll and at least the melt blowout end of the melt nozzle, for preventing an inflow of air due to rotation of the cooing roll. The air-cutoff unit has a roll top air-cutoff plate provided above the cooling roll to extent from the front side to the rear side in the rotation direction of the cooling roll in such a manner that it approaches the cooling surface in the direction opposite to the rotation direction of the cooling roll. The melt blowout end of the melt nozzle is arranged to pass through a nozzle mounting hole provided in the roll top air-cutoff plate and face the cooling surface of the cooling roll.Type: GrantFiled: June 2, 1999Date of Patent: September 10, 2002Assignee: Alps Electric Co., Ltd.Inventors: Junichi Murakami, Akinori Kojima, Yutaka Yamamoto, Akihiro Makino, Takashi Hatanai
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Patent number: 6351204Abstract: A thin magnetic element comprising a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the relationship 0.035≦t/a≦0.35, and the thin magnetic film has a resistivity of 400 &mgr;&OHgr;cm or more.Type: GrantFiled: May 2, 2000Date of Patent: February 26, 2002Assignee: Alps Electric Co., Ltd.Inventors: Kiyohito Yamasawa, Yasuo Hayakawa, Takashi Hatanai, Akihiro Makino, Yutaka Naito, Naoya Hasegawa
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Patent number: 6346338Abstract: A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.Type: GrantFiled: October 10, 2000Date of Patent: February 12, 2002Assignee: Alps Electric Co., Ltd.Inventors: Toshinori Watanabe, Akira Takahashi, Fumihito Koike, Nobuhiro Hayashi, Yoshihiro Kanada, Kiyoshi Kobayashi, Kiyoshi Sato, Eiji Umetsu, Takashi Hatanai, Akihiro Makino
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Patent number: 6329818Abstract: The present invention is characterized in that a first giant magnetoresistive effect element and a second giant magnetoresistive effect element are provided along a first straight line with the magnetization of the pinned magnetic layer c oriented in a fixed direction, and that a third giant magnetoresistive effect element and a fourth giant magnetoresistive effect element are provided along a second straight line, which is parallel to the first straight line, with the magnetization of the pinned magnetic layer oriented 180° opposite to the directions of magnetization of the pinned magnetic layers in the first and second giant magnetoresistive effect elements.Type: GrantFiled: July 14, 1999Date of Patent: December 11, 2001Assignee: Alps Electric Co., Ltd.Inventors: Ichirou Tokunaga, Seiji Kikuchi, Yoshito Sasaki, Takashi Hatanai
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Patent number: 6312530Abstract: A magnetostrictive material is produced by annealing an alloy consisting essentially of an amorphous phase and comprising Fe, Dy, and Tb as primary components, at least one element selected from the group consisting of Ta, Nb, Zr, Hf, V, W, Mo, Si and B and/or at least one element selected from the group consisting of Cr, Al, Ga, Ge, Cu, Au, Ag, Pt, Pd, Os, Ir, and Rh.Type: GrantFiled: October 14, 1998Date of Patent: November 6, 2001Assignees: Alps Electric Co., Ltd.Inventors: Akinori Kojima, Akihiro Makino, Takashi Hatanai, Yutaka Yamamoto, Akihisa Inoue
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Patent number: 6239594Abstract: A magnet layer or antiferromagnetic thin film layer composed of a thin film serving as a bias magnetic field applying member is provided at both ends of a magnetic thin film having a magneto-impedance effect so that a bias magnetic field Hbi is applied to the magnetic thin film layer in parallel with the direction of application of an external magnetic field Hex to the magnetic thin film layer. As the magnetic thin film layer, a soft magnetic material having the composition ColTamHfn, FehRiOl, (Co1-vTv)xMyOzXw, T100-d-e-f-gXdMeZfQg or T100-p-q-f-gSipAlqMeZfQg is used.Type: GrantFiled: September 22, 1999Date of Patent: May 29, 2001Assignee: Alps Electric Co., Ltd.Inventors: Yutaka Naito, Yoshito Sasaki, Takashi Hatanai
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Patent number: 6235129Abstract: A hard magnetic material contains Co as a main component, at least one element Q of P, C, Si and B, and Sm, and an amorphous phase and a fine crystalline phase. The texture of the hard magnetic material contains 50% by volume or more of fine crystalline phase having an average crystal grain size of 100 nm or less, and has a mixed phase state containing a soft magnetic phase and a hard magnetic phase. Further, anisotropy is imparted to the crystal axis of the hard magnetic phase.Type: GrantFiled: December 1, 1998Date of Patent: May 22, 2001Assignee: ALPS Electric Co., Ltd.Inventors: Akinori Kojima, Akihiro Makino, Takashi Hatanai, Yutaka Yamamoto, Akihisa Inoue
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Patent number: 6232775Abstract: A magneto-impedance element comprises an alloy composed of at least one of Fe, Co and Ni. The alloy has a mixed texture of an amorphous phase and a fine crystalline phase having an average crystal grain size of 50 nm or less. The magneto-impedance element shows a change in impedance in response to an external magnetic field by applying an alternating current. The magneto-impedance element is applied to an azimuth sensor, an autocanceler, or a magnetic head.Type: GrantFiled: December 14, 1998Date of Patent: May 15, 2001Assignees: Alps Electric Co., LTDInventors: Yutaka Naitoh, Teruo Bitoh, Takashi Hatanai, Akihiro Makino, Junichi Ouchi, Shinichi Sasaqawa, Akihisa Inoue, Tsuyoshi Masumoto