Abstract: An exemplary method of controlling an internal combustion engine system is described herein. The internal combustion engine system includes an internal combustion engine, a valve driving mechanism which reciprocally drives an intake valve and an exhaust valve for a combustion chamber of the internal combustion engine, a turbocharger including a turbine and a compressor, and a first EGR passage which communicates an exhaust passage downstream of the emission control device and an intake passage upstream of the compressor. The exemplary method includes shutting off supplying fuel to the combustion chamber under a predetermined condition, and decreasing a lift of the intake or exhaust valve for the combustion chamber during the shutting off supplying fuel to the combustion chamber compared to in a case of supplying fuel to said combustion chamber.

Abstract: A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneously formed. The p-pad electrode and the n-electrode are composed of Ni/Au. The resultant structure is heat treated at 570° C. and good contact can be established in the p-pad electrode and the n-electrode. The heat treatment also provides a region in the transparent electrode immediately below the p-pad electrode, the region and the p-type layer having a higher contact resistance than that of the other region of the transparent electrode and the p-type layer. Thus, a region of an active layer below the provided region does not emit light and hence the light-emitting efficiency of the light-emitting device can be increased.

Abstract: A switch station including an ATM switch; a memory storing control data for operations of the switch station; an intra-station device, accommodating a subscriber line, performing communication operation on subscriber ATM cell; a control processor generating control information in link access protocol (LAP) format; and an interface unit converting LAP control information into ATM cell to the intra-station device through the ATM switch, wherein the control information is communicated according to LAP, the intra-station device receives the control information and transmits a direct memory access request to obtain control data stored in the memory, the interface unit obtains and converts the data format of the control data into ATM cell to transmit to the intra-station device through the switch, and the intra-station device performs the communication operation on the subscriber ATM cell based on the control data received through the switch.

Abstract: An image reading device includes an image reader, which reads an original into image data by scanning the original in the main scanning direction at an image reading width while the original is being fed in a sub scanning direction; and a controller, which inputs reading settings information and set the image reading width to a maximum reading width of the image reader when the reading settings information includes a user instruction for setting the image reading width to the maximum reading width.

Abstract: (1) Base stations are divided into base station groups which do not mutually interfere with one another. (2) Priorities of the use of channels are set for each base station group, and each base station holds a priority table showing the priorities of the use of channels. (3) Each base station derives a channel to request, and informs about the channel to adjacent base stations. (4) When the requested channel of the base station overlaps with a requested channel of the adjacent base station, each base station refers to the priority table and autonomously judges whether the requested channel can be used or not. Therefore, it is no longer necessary to wait for a response to the requested message or to confirm with the adjacent base stations regarding the availability of channels, and reduction of the throughputs and prompt channel allocation are possible.

Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 ? in thickness of GaN barrier layer 62 and about 35 ? in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Abstract: When setting up a working path, a protection path is automatically set up by taking each node on the working path as a start point. A working path setup request message carrying “protection needed/not-needed” information is transmitted from an ingress node toward an egress node along the route of the working path. When transferring a path setup response message as a response to it, each node autonomously determines the route of the protection path and sends out a protection path setup request message along the route of the protection path.

Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 ? in thickness of GaN barrier layer 62 and about 35 ? in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Abstract: The quality and performance of the connectionless communications system are improved. When a BOM is received, the destination address DA of the L3-PDU stored in the payload of the BOM is retrieved, and the tag information is obtained from the DA (S11). The output message identifier MID is reserved (S12), and the tag information and output MID are assigned to the BOM (S13). Then, the tag information and output MID are written to the table. When a COM is received, the tag information and output MID are retrieved using the MID of the COM as a key, and the information is provided for the COM (S31 and S32). When an EOM is received, the tag information and output MID are retrieved using the MID of the EOM as a key, and the information is provided for the EOM (S41 and S42). Then, the output MID is released (S43).

Abstract: A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Abstract: When setting up a working path, a protection path is automatically set up by taking each node on the working path as a start point. A working path setup request message carrying “protection needed/not-needed” information is transmitted from an ingress node toward an egress node along the route of the working path. When transferring a path setup response message as a response to it, each node autonomously determines the route of the protection path and sends out a protection path setup request message along the route of the protection path.

Abstract: The quality and performance of the connectionless communications system are improved. When a BOM is received, the destination address DA of the L3-PDU stored in the payload of the BOM is retrieved, and the tag information is obtained from the DA (S11). The output message identifier MID is reserved (S12), and the tag information and output MID are assigned to the BOM (S13). Then, the tag information and output MID are written to the table. When a COM is received, the tag information and output MID are retrieved using the MID of the COM as a key, and the information is provided for the COM (S31 and S32). When an EOM is received, the tag information and output MID are retrieved using the MID of the EOM as a key, and the information is provided for the EOM (S41 and S42). Then, the output MID is released (S43).

Abstract: For both a bandwidth-guaranteed connection call and a non-bandwidth-guaranteed connection call together, with respect to the bandwidth-guaranteed connection call, a schedular allocates the number of time slots which correspond to a required bandwidth to the bandwidth-guaranteed connection call from among the N time slots that constitute one period and so controls as to transmit an ATM cell at an allocated time slot. The non-bandwidth-guaranteed call transmitting unit transmits an ATM cell of a non-bandwidth-guaranteed connection call at a time slot which is not allocated to any bandwidth-guaranteed connection call. A congestion/normal state monitoring unit sets in advance a queue length which is regarded as the occurrence of a long-term congestion in a queuing buffer and compares the actual queue length with the preset queue length so as to detect the occurrence of a long-term congestion.

Abstract: A media information distribution service system, such as a video-on-demand service system, is disclosed which, even if the capacity of a line is small and the number of lines connected to a media server, such as a video server, has to be increased accordingly, permits an uneconomical increase in the number of line circuits in the media server to be checked. In the system, a subscriber group that a distributor accommodates can be associated with a plurality of distributor-side paths on a distributor-side line. Each of the distributor-side paths is connected to a respective one of server-side paths on separate server-side lines connecting the media server and an exchange. In sending media information to a subscriber group, an in-server path control unit installed in the media server is permitted to select a free one out of server-side paths on server-side lines allocated for that subscriber group and activates a line interface corresponding to the free server-side path.

Abstract: A CPU sets one of first and second memories as an "active system memory" and the other as a "standby system memory". Data about a combination of the VPI/VCI and TAG data is registered in and deleted from only the memory set as the "active system memory". The CPU, only when a null entry exists in a position satisfying a VPI/VCI increasing sequence with an increased address value, registers this null entry in the active system memory with data about new combination of the VPI/VCI and the TAG data. Whereas if there is no such null entry, the CPU reads the data about all the combinations of the VPI/VCI and the TAG data which are registered in the active system memory, re-sorts the read data and the data about the new combinations in the VPI/VCI increasing sequence and write the data from the head address in the standby system memory in a sorting sequence.

Abstract: An ATM including both a bandwidth-guaranteed connection call and a non-bandwidth-guaranteed connection call together, with respect to the bandwidth-guaranteed connection call, a scheduler 21 allocates the number of time slots which correspond to a required bandwidth to the bandwidth-guaranteed connection call from among the N time slots which constitute one period and so controls as to transmit an ATM cell at an allocated time slot. A non-bandwidth-guaranteed cell transmitting element 31 transmits an ATM cell of a non-bandwidth-guaranteed connection call at a time slot which is not allocated at any bandwidth-guaranteed connection call. A congestion/normal state monitoring element 121 sets in advance a queue length which is regarded as the occurrence of a long-term congestion in a queuing buffer 111, and compares the actual queue length with the preset queue length so as to detect the occurrence of a long-term congestion.

Abstract: A subscriber line control device utilizes a scan input table and a last look table. The scan input table stores respective current line states of a plurality of analog subscriber lines. The last look table stores respective preceding line states of the plurality of analog subscriber lines and information for validating or invalidating a timer device. A valid timer device corresponds to when a monitoring process is required. The scan input table is compared with the last look table at every predetermined cycle. When they do not match, it is judged whether the line state has changed or if the timer device is validated. Based on the judging result, an analog subscriber line control is performed according to an instruction specified by a call processing unit. The analog subscriber control is any of a call origination monitor, a dial pulse monitor, and an on-hook and off-hook (HIT) monitor.

Abstract: A data transfer system including an exchange, wherein the exchange transfers data by sharing a plurality of channels by a time division multiplex mode. In this case, the exchange transfers the data by variably allocating respective time slots to be occupied by the respective channels. That is, it is possible to allot any line speed to any channel and therefore possible to mix signals with different data transfer speeds in the frames. This results in an exchange network with a high degree of freedom of transfer for the subscriber terminal equipment.

Abstract: A maintenance link is established according to a LAPD between first and second terminal units on a path through which subscribers' packet information is transmitted. In the first and second terminal units, first and second communication state control units are provided for controlling the consistency of the communication state between the two terminal units by sending/receiving communication state control information using the maintenance link.