Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.

Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.