Abstract: A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.

Abstract: An object of the present invention is to provide a purification method of separating impurities from a carboxyl group-containing polyoxyethylene derivative having a molecular weight of 2,000 to 100,000. The purification method according to the invention includes the following steps. The polyoxyethylene derivative is dissolved to form a solution using toluene, xylene, benzene, ethyl acetate, or butyl acetate in an amount 5 times by mass or more the amount of the polyoxyethylene derivative. A slurry is formed by adding to the solution an inorganic adsorbent containing at least one of an oxide and a hydroxide of one or more elements selected from the group consisting of magnesium, silicon, and aluminum in an amount 0.5 to 10 times by mass the amount of the polyoxyethylene derivative. The slurry is stirred at a temperature of 25° C. or higher. Toluene, xylene, benzene, ethyl acetate, or butyl acetate is added to a filtration cake obtained by filtration of the slurry, and further filtration is performed.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided via a gate insulating film above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a protection film covering the side face of the gate electrode. The method can include etching the semiconductor substrate using the gate electrode as a mask to form the isolation groove. The side face of the gate electrode is covered with the protection film. The method can include forming a first insulating film by oxidizing a surface of the isolation groove to fill a bottom portion of the isolation groove. In addition, the method can include forming a second insulating film on the first insulating film to fill an upper portion of the isolation groove including the side face of the gate electrode.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a first isolation groove penetrating through a conductive film serving as the gate electrode to reach the semiconductor substrate. The method can include forming a protection film covering a side wall of the first isolation groove including a side face of the gate electrode. The method can include forming a second isolation groove by etching the semiconductor substrate exposed to a bottom surface of the first isolation groove. The method can include oxidizing an inner surface of the second isolation groove provided on each of both sides of the gate electrode to form first insulating films, which are connected to each other under the gate electrode.

Abstract: According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.

Abstract: Compounds of the following formula are provided for use with kinases: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using said compounds.

Abstract: There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.

Abstract: Compounds of the following formula are provided for use with kinases: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using said compounds.

Abstract: A racing toy including: a running body including, a driving mechanism for automatic running, and a running control section to enhance running ability of the running body and to reduce running ability of a competing running body; a signal storing section to store a plurality of running control signals regarding the running ability of the running body; and a selection control section to randomly select a running control signal from among the running control signals stored in the signal storing section, wherein the running control section enhances the running ability of the running body and/or reduces the running ability of the competing running body according to the running control signal selected by the selection control section.

Abstract: A racing toy including: at least one first running body; and at least one second running body which competes with the first running body for speed, wherein the first running body includes: a driving mechanism for automatic running; and a first obstructing signal transmitting section to transmit an obstructing signal at least forward and/or backward by radio, the obstructing signal which obstructs the running of the second running body, and the second running body includes: a driving mechanism for automatic running; an obstructing signal receiving section to receive the obstructing signal; and an obstruction control section to control an obstructing operation of the driving mechanism of the second running body according to the obstructing signal received at the obstructing signal receiving section.

Abstract: The present invention is a heat processing furnace comprising: a processing vessel for accommodating an object to be processed and performing thereto a heat process; and a cylindrical heater disposed to surround a circumference of the processing vessel, for heating the object to be processed; wherein: the heater includes a cylindrical heat insulating member, ribbed shelf sections that are axially formed in a tier-like manner on an inner circumference of the heat insulating member, and heating resistance wires of a helical pattern that are placed along the respective shelf sections; and pin members are arranged in the heat insulating member at suitable intervals therebetween, the pin members holding the heating resistance wires such that the heating resistance wires are movable in a radial direction of the heater, while preventing dropout of the heating resistance wires from the shelf sections.

Abstract: Compounds of the following formula are provided for use with kinases: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using said compounds.

Abstract: A multi-dot flash memory set potentials of bit lines being disposed at a left side of a selected floating gate to V2(1)>V2(2)>V2(3)> . . . and set potentials of bit lines being disposed at a right side of the selected floating gate to V1(1)<V1(2)<V1(3)< . . . . Where V2(1) is a plus potential and V1(1) is a minus potential. The potentials of the bit lines converge on 0V with being away from the selected floating gate.

Abstract: Disclosed in a door mirror device capable of continuously emitting light from two light guides. The door mirror device comprises: a first light-emitting light guide arranged in the visor part of a door mirror foldably mounted on the door mirror support part of a vehicle; a second light-emitting light guide provided in the door mirror support part, an end of the second light-emitting light guide facing to an end of the first light-emitting light guide so as to have continuity with the first light-emitting light guide; and a light source configured to emit light toward the first light-emitting light guide and the second light-emitting light guide, the light source being provided in the visor part.

Abstract: A multi-dot flash memory includes active areas arranged in a first direction, which extend to a second direction crossed to the first direction, the first and second direction being parallel to a surface of a semiconductor substrate, floating gates arranged in the first direction, which are provided above the active areas, a word line provided above the floating gates, which extends to the first direction, and bit lines provided between the floating gates, which extend to the second direction. Each of the floating gates has two side surfaces in the first direction, shapes of the two side surfaces are different from each other, and shapes of the facing surfaces of the floating gates which are adjacent to each other in the first direction are symmetrical.

Abstract: In vaporized fuel processing device and method, an adsorption material provides a canister and configured to once hold the vaporized fuel generated in a fuel tank into the adsorption material within the canister, the canister into which an intake air pressure of an engine used for purge air being introduced when the engine is operated and purge air purging fuel corresponding to vaporized fuel from the adsorption material to be supplied to the engine; an electric heater configured to variably control an electric power supplied to the heater in accordance with a purge air quantity to be introduced within the canister.

Abstract: The present invention provides PLK inhibitors of the formula wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using the compounds.

Abstract: Compounds of the following formula are provided for use with kinases: wherein the variables are as defined herein. Also provided are pharmaceutical compositions, kits and articles of manufacture comprising such compounds; methods and intermediates useful for making the compounds; and methods of using said compounds.