Abstract: An insulating substrate in which one principal surface of a heat-dissipation-side metal plate is bonded to one principal surface of a ceramic substrate via a brazing material layer provided therebetween, and a solder resist portion is formed on at least one selected from a periphery of the other principal surface of the heat-dissipation-side metal plate, a side surface of the heat-dissipation-side metal plate, and a surface of the brazing material layer. A solder resist prevents solder from wrapping around the brazing material layer, and thereby, what is called “the brazing material layer leaching into solder” no longer occurs and the occurrence of cracks inside the brazing material layer is avoided. This prevents stress concentration from occurring in the ceramic substrate at an inner portion relative to an end portion of the heat-dissipation-side metal plate.

Abstract: Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module. A semiconductor module 50 is provided with: an insulated substrate 23; a circuit pattern 24 that is formed on the insulated substrate; semiconductor elements 25, 26 that are joined on the circuit pattern; and a sealing resin 28 for sealing the insulated substrate, the circuit pattern, and the semiconductor elements. The surface 23a of the insulated substrate in a part where the insulative substrate and the sealing resin are bonded to each other, is characterized in that, in a cross section of the insulated substrate, the average roughness derived in a 300-?m wide range is 0.15 ?m or greater and the average roughness derived in a 3-?m-wide range is 0.02 ?m or greater.

Abstract: An insulating substrate in which one principal surface of a heat-dissipation-side metal plate is brazed to one principal surface of a ceramic substrate via a brazing material layer provided therebetween, in which a Ni plating layer that covers the brazing material layer exposed between the ceramic substrate and the heat-dissipation-side metal plate is provided, and at least a portion of the other principal surface of the heat-dissipation-side metal plate is not covered with a Ni plating layer, leaving the surface of the heat-dissipation-side metal plate exposed. According to the present invention, it becomes possible to obtain the insulating substrate having excellent furnace passing resistance of the insulating substrate (alone) and further having excellent heat cycle characteristics in a state of a heat sink plate being soldered to the insulating substrate.

Abstract: Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module. A semiconductor module 50 is provided with: an insulated substrate 23; a circuit pattern 24 that is formed on the insulated substrate; semiconductor elements 25, 26 that are joined on the circuit pattern; and a sealing resin 28 for sealing the insulated substrate, the circuit pattern, and the semiconductor elements. The surface 23a of the insulated substrate in a part where the insulative substrate and the sealing resin are bonded to each other, is characterized in that, in a cross section of the insulated substrate, the average roughness derived in a 300-?m wide range is 0.15 ?m or greater and the average roughness derived in a 3-?m-wide range is 0.02 ?m or greater.

Abstract: After a copper plate 14 is bonded to at least one surface of a ceramic substrate 10 via an active metal containing brazing filler metal 12 which contains silver, the unnecessary portion of the copper plat 14 and active metal containing brazing filler metal 12 is removed, and thereafter, an unnecessary portion of the copper plate 14 is removed by chemical polishing so as to cause the active metal containing brazing filler metal 12 to protrude from the side face portion of the copper plate 14, and then, a silver layer 18 adhered to the surface of the copper plate 14 by the chemical polishing is removed.

Abstract: After a copper plate 14 is bonded to at least one surface of a ceramic substrate 10 via an active metal containing brazing filler metal 12 which contains silver, the unnecessary portion of the copper plat 14 and active metal containing brazing filler metal 12 is removed, and thereafter, an unnecessary portion of the copper plate 14 is removed by chemical polishing so as to cause the active metal containing brazing filler metal 12 to protrude from the side face portion of the copper plate 14, and then, a silver layer 18 adhered to the surface of the copper plate 14 by the chemical polishing is removed.